High‐Performance n‐Channel Organic Transistors Using High‐Molecular‐Weight Electron‐Deficient Copolymers and Amine‐Tailed Self‐Assembled Monolayers

2018 ◽  
Vol 30 (13) ◽  
pp. 1707164 ◽  
Author(s):  
Yang Wang ◽  
Tsukasa Hasegawa ◽  
Hidetoshi Matsumoto ◽  
Takehiko Mori ◽  
Tsuyoshi Michinobu
2011 ◽  
Vol 23 (21) ◽  
pp. 2464-2468 ◽  
Author(s):  
Xiaomu Wang ◽  
Jian-Bin Xu ◽  
Chengliang Wang ◽  
Jun Du ◽  
Weiguang Xie

2015 ◽  
Vol 7 (41) ◽  
pp. 22775-22785 ◽  
Author(s):  
Mahdieh Aghamohammadi ◽  
Reinhold Rödel ◽  
Ute Zschieschang ◽  
Carmen Ocal ◽  
Hans Boschker ◽  
...  

2013 ◽  
Author(s):  
S. Ito ◽  
S.W. Lee ◽  
T. Yokota ◽  
T. Tokuhara ◽  
H. Klauk ◽  
...  

2011 ◽  
Vol 161 (9-10) ◽  
pp. 743-747 ◽  
Author(s):  
Niklas Björklund ◽  
Fredrik S. Pettersson ◽  
Daniel Tobjörk ◽  
Ronald Österbacka

RSC Advances ◽  
2014 ◽  
Vol 4 (85) ◽  
pp. 45082-45087 ◽  
Author(s):  
Boseok Kang ◽  
Wi Hyoung Lee ◽  
Hyun Ho Choi ◽  
Yeong Don Park ◽  
Kilwon Cho

We systematically investigated the effects of a self-assembled monolayer (SAM), prepared on the gate dielectric, on the performances of bottom-gate organic field-effect transistor (OFET) devices under various humid environments.


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