In situ scanning tunneling microscopy of InAs quantum dots on GaAs() during molecular beam epitaxial growth

2003 ◽  
Vol 544 (2-3) ◽  
pp. 234-240 ◽  
Author(s):  
G.R. Bell ◽  
M. Pristovsek ◽  
S. Tsukamoto ◽  
B.G. Orr ◽  
Y. Arakawa ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Scanning Tunneling Microscopy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Inas Quantum Dots ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth

Direct observation of strain in InAs quantum dots and cap layer during molecular beam epitaxial growth using in situ X-ray diffraction

2015 ◽  
Vol 118 (18) ◽  
pp. 185303 ◽  
Author(s):  
Kenichi Shimomura ◽  
Hidetoshi Suzuki ◽  
Takuo Sasaki ◽  
Masamitu Takahasi ◽  
Yoshio Ohshita ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Epitaxial Growth ◽  
Direct Observation ◽  
Molecular Beam ◽  
X Ray Diffraction ◽  
Inas Quantum Dots ◽  
X Ray ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth

Quenching Effects in Scanning Tunneling Microscopy Studies of Epitaxial Growth

1999 ◽  
Vol 583 ◽  
Author(s):  
G. R. Bell
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Atomic Scale ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Molecular Beam Epitaxial ◽  
Rapid Quench ◽  
Molecular Beam Epitaxial Growth

AbstractThe experimental aspects of rapid-quench scanning tunneling microscopy are discussed. In particular, the effects of sample quenching are investigated in atomic-scale studies of the molecular beam epitaxial growth of GaAs. Implications for the study of the heteroepitaxial system InAs-GaAs are discussed.

Morphological Changes to InAs Quantum Dots Caused by GaAs Overgrowth

1999 ◽  
Vol 571 ◽  
Author(s):  
J.B. Smathers ◽  
P. Ballet ◽  
G.J. Salamo
Keyword(s):  
Quantum Dots ◽  
Scanning Tunneling Microscopy ◽  
Surface Diffusion ◽  
Morphological Changes ◽  
Scanning Tunneling ◽  
Morphological Instability ◽  
Tunneling Microscopy ◽  
Specific Mechanism ◽  
Inas Quantum Dots

ABSTRACTWe have used in-situ scanning tunneling microscopy (STM) to study the morphological changes to InAs quantum dots (QD's) caused by overgrowth of a GaAs capping layer. We demonstrate that the InAs islands are highly unstable during GaAs overgrowth and that this morphological instability confirms that significant cation intermixing occurs during overgrowth. In particular, the anisotropic nature of the volume redistribution indicates that In surface diffusion is the specific mechanism of In transfer away from the islands. Images taken after 10 monolayers or more of overgrowth reveal that more rapid GaAs overgrowth better preserves the 3D-islands morphology.

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