scholarly journals Molecular beam epitaxial growth and scanning tunneling microscopy studies of the gallium rich trench line structure on N-polar w-GaN( 000 1 ¯ )

2015 ◽  
Vol 33 (6) ◽  
pp. 061404 ◽  
Author(s):  
Zakia H. Alhashem ◽  
Andrada-Oana Mandru ◽  
Jeongihm Pak ◽  
Arthur R. Smith
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Molecular Beam Epitaxial ◽  
Line Structure ◽  
Molecular Beam Epitaxial Growth

Quenching Effects in Scanning Tunneling Microscopy Studies of Epitaxial Growth

1999 ◽  
Vol 583 ◽  
Author(s):  
G. R. Bell
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Atomic Scale ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Molecular Beam Epitaxial ◽  
Rapid Quench ◽  
Molecular Beam Epitaxial Growth

AbstractThe experimental aspects of rapid-quench scanning tunneling microscopy are discussed. In particular, the effects of sample quenching are investigated in atomic-scale studies of the molecular beam epitaxial growth of GaAs. Implications for the study of the heteroepitaxial system InAs-GaAs are discussed.

scholarly journals Surface Reconstruction during Molecular Beam Epitaxial Growth of GaN (0001)

1998 ◽  
Vol 3 ◽  
Author(s):  
A. R. Smith ◽  
V. Ramachandran ◽  
R. M. Feenstra ◽  
D. W. Greve ◽  
A. Ptak ◽  
...  
Keyword(s):  
Molecular Beam ◽  
High Energy ◽  
Nitrogen Plasma ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Plasma Sources ◽  
Molecular Beam Epitaxial ◽  
Homoepitaxial Growth ◽  
Surface Reconstructions ◽  
Molecular Beam Epitaxial Growth

Surface reconstructions during homoepitaxial growth of GaN (0001) are studied using reflection high-energy electron diffraction and scanning tunneling microscopy. In agreement with previous workers, a distinct transition from rough to smooth morphology is seen as a function of Ga to N ratio during growth. However, in contrast to some prior reports, no evidence for a 2×2 reconstruction during GaN growth is observed. Observations have been made using four different nitrogen plasma sources, with similar results in each case. A 2×2 structure of the surface can be obtained, but only during nitridation of the surface in the absence of a Ga flux.

Molecular-beam-epitaxial growth of Ga1−xInxSb on GaAs substrates

1997 ◽  
Vol 175-176 ◽  
pp. 883-887 ◽  
Author(s):  
J.H. Roslund ◽  
O. Zsebők ◽  
G. Swenson ◽  
T.G. Andersson
Keyword(s):  
Epitaxial Growth ◽  
Molecular Beam ◽  
Molecular Beam Epitaxial ◽  
Gaas Substrates ◽  
Molecular Beam Epitaxial Growth

Molecular beam epitaxial growth of gallium nitride nanowires on atomic layer deposited aluminum oxide

2011 ◽  
Vol 334 (1) ◽  
pp. 113-117 ◽  
Author(s):  
Kevin Goodman ◽  
Vladimir Protasenko ◽  
Jai Verma ◽  
Tom Kosel ◽  
Grace Xing ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Aluminum Oxide ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth

Molecular beam epitaxial growth of low‐resistivity ZnSe films

1979 ◽  
Vol 35 (2) ◽  
pp. 97-98 ◽  
Author(s):  
Takafumi Yao ◽  
Yunosuke Makita ◽  
Shigeru Maekawa
Keyword(s):  
Epitaxial Growth ◽  
Molecular Beam ◽  
Low Resistivity ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth

Molecular beam epitaxial growth of InAs self-assembled quantum dots with light-emission at 1.3μm

2000 ◽  
Vol 208 (1-4) ◽  
pp. 93-99 ◽  
Author(s):  
Y Nakata ◽  
K Mukai ◽  
M Sugawara ◽  
K Ohtsubo ◽  
H Ishikawa ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Light Emission ◽  
Molecular Beam Epitaxial ◽  
Self Assembled ◽  
Molecular Beam Epitaxial Growth
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