Scanning tunneling microscopy study of molecular-beam epitaxial growth of GaAs on GaAs(001)

1993 ◽  
Vol 11 (3) ◽  
pp. 775 ◽  
Author(s):  
J. Sudijono
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Microscopy Study ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth ◽  
Scanning Tunneling Microscopy Study

Quenching Effects in Scanning Tunneling Microscopy Studies of Epitaxial Growth

1999 ◽  
Vol 583 ◽  
Author(s):  
G. R. Bell
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Atomic Scale ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Molecular Beam Epitaxial ◽  
Rapid Quench ◽  
Molecular Beam Epitaxial Growth

AbstractThe experimental aspects of rapid-quench scanning tunneling microscopy are discussed. In particular, the effects of sample quenching are investigated in atomic-scale studies of the molecular beam epitaxial growth of GaAs. Implications for the study of the heteroepitaxial system InAs-GaAs are discussed.

Self-Assembled InAs Islands on (AI,Ga)As, an In Situ Scanning Tunneling Microscopy Study

1999 ◽  
Vol 571 ◽  
Author(s):  
P. Ballet ◽  
J.B. Smathers ◽  
G.J. Salamo
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Molecular Beam ◽  
Three Dimensional ◽  
Microscopy Study ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Self Organized ◽  
Scanning Tunneling Microscopy Study ◽  
Island Density

ABSTRACTWe report an in-situ molecular beam epitaxy – scanning tunneling microscopy study of three dimensional (3D) self organized InAs islands on (AI,Ga)As surfaces. The influence of the presence of Al atoms on the roughness of the starting surface and on the island density is shown by investigating several Al compositions. We emphasize the case of InAs/AlAs and point out the major differences between this system and the widely studied InAs/GaAs system.

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