High aspect ratio micro-hole filling employing emulsified supercritical CO2 electrolytes

2016 ◽  
Vol 109 ◽  
pp. 61-66 ◽  
Author(s):  
Cheng-Yu Li ◽  
Jun-Jie Yang ◽  
Wen-Ta Tsai ◽  
Chang-Jian Lin ◽  
Tso-Fu Mark Chang ◽  
...  
2010 ◽  
Vol 42 ◽  
pp. 13-16
Author(s):  
Wei Li ◽  
Ping Mei Ming ◽  
Wu Ji Jiang ◽  
Yin Ding Lv

In this paper, the influences of applied magnetic field on flow state during electroforming of the high-aspect-ratio (HAR) blind micro-hole were numerically analyzed using the Fluent software. The results showed that, when microelectroforming of nickel without external agitation, three vortexes could form due to the magnetohydrodynamic (MHD) effect within the HAR micro-hole with magnetic field in parallel to cathode-electrode surface, and the flow rate in the micro-hole increased with the increase of the magnetic field and current density. The MHD effect helped to enhance mass transfer during the microelectroforming of HAR microstructures.


1986 ◽  
Author(s):  
K. Suguro ◽  
Y. Nakasaki ◽  
S. Shima ◽  
T. Yoshii ◽  
T. Moriya ◽  
...  

2008 ◽  
Author(s):  
Jiwen Cui ◽  
Jiubin Tan ◽  
Fei Wang ◽  
Chuanxi Song

1992 ◽  
Vol 260 ◽  
Author(s):  
N. Zhu ◽  
S. K. Jo ◽  
M. B. Freiler ◽  
R. Scarmozzino ◽  
R. M. Osgood ◽  
...  

ABSTRACTWe present a novel technique to metallize high-aspect-ratio, small-dimension contact holes and via plugs for application to integrated circuits and packaging. The technique uses a laser-assisted process to deposit a thin film of aluminum from DMA1H, which forms a seed layer for subsequent selective CVD. The resistivity of the deposited aluminum is nearly that of the bulk metal, the contact resistivity is good (∼0.03 μΩ-cm2), and the morphology of the deposited film is comparable to that obtained with physical vapor deposition. This process has been used to fill via holes in a SiO2 substrate, and small-diameter (0.7 μm), high-aspect-ratio (3:1), aluminum plugs have been repeatedly formed without the incorporation of voids. A custom-made via chain structure was used to determine the via resistance (plug and contact), which was found to be 0.1 -0.3 Ω. Our technique opens a new process window for void-free high-aspect-ratio via and contact hole filling, and is particularly interesting in that it offers the potential to use aluminum or aluminum-copper in plug metallization.


CIRP Annals ◽  
2009 ◽  
Vol 58 (1) ◽  
pp. 213-216 ◽  
Author(s):  
Z.Y. Yu ◽  
Y. Zhang ◽  
J. Li ◽  
J. Luan ◽  
F. Zhao ◽  
...  

2004 ◽  
Vol 812 ◽  
Author(s):  
S. Gangopadhyay ◽  
J.A. Lubguban ◽  
B. Lahlouh ◽  
G. Sivaraman ◽  
K. Biswas ◽  
...  

Supercritical fluids (SF) have been used in a wide variety of applications: in industrial processes, analytical, waste detoxification, etc. Recently, its usefulness extends to the semiconductor industry. Researches have shown that supercritical CO2 (SCCO2) can be used to remove photoresists and significantly reduce the amount of waste from solvents in comparison to conventional stripping techniques. SF will also find its usefulness in cleaning high aspect ratio vias and deep trenches as semiconductor features shrink to submicron levels. We will report here the use of supercritical CO2 treatments in extraction of porogens from a nanohybrid film fabricated via templated-porogen approach. Its use as a medium to repair the damage in porous films from plasma ashing will also be presented. The ability to tune the solvation and diffusion power of SCCO2 and to swell the film matrix make it a good medium for silylation to restore hydrophobicity and functionalize the film.


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