High aspect ratio hole filling by tungsten chemical vapor deposition combined with a silicon sidewall and barrier metal for multilevel interconnection

1987 ◽  
Vol 62 (4) ◽  
pp. 1265-1273 ◽  
Author(s):  
K. Suguro ◽  
Y. Nakasaki ◽  
S. Shima ◽  
T. Yoshii ◽  
T. Moriya ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Aspect Ratio ◽  
Vapor Deposition ◽  
High Aspect Ratio ◽  
Chemical Vapor ◽  
Hole Filling ◽  
Barrier Metal

scholarly journals Passivation of high aspect ratio silicon nanowires by using catalytic chemical vapor deposition for radial heterojunction solar cell application

RSC Advances ◽  
2017 ◽  
Vol 7 (71) ◽  
pp. 45101-45106 ◽  
Author(s):  
Gangqiang Dong ◽  
Yurong Zhou ◽  
Hailong Zhang ◽  
Fengzhen Liu ◽  
Guangyi Li ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Aspect Ratio ◽  
Silicon Nanowires ◽  
Vapor Deposition ◽  
High Aspect Ratio ◽  
Chemical Etching ◽  
Chemical Vapor ◽  
Solar Cell Application ◽  
Catalytic Chemical Vapor Deposition ◽  
Metal Assisted Chemical Etching

High aspect ratio silicon nanowires (SiNWs) prepared by metal-assisted chemical etching were passivated by using catalytic chemical vapor deposition (Cat-CVD).

Separate evaluation of multiple film-forming species in chemical vapor deposition of SiC using high aspect-ratio microchannels

2017 ◽  
Vol 56 (6S2) ◽  
pp. 06HE02 ◽  
Author(s):  
Kohei Shima ◽  
Noboru Sato ◽  
Yuichi Funato ◽  
Yasuyuki Fukushima ◽  
Takeshi Momose ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Aspect Ratio ◽  
Vapor Deposition ◽  
High Aspect Ratio ◽  
Chemical Vapor ◽  
Film Forming
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