Charge trapping in HfO2 and HfSiO4 MOS gate dielectrics

2006 ◽  
Vol 50 (9-10) ◽  
pp. 1670-1672 ◽  
Author(s):  
Kyuhwan Chang ◽  
Feng-Ming Chang ◽  
Jerzy Ruzyllo
Keyword(s):  
Gate Dielectrics ◽  
Charge Trapping ◽  
Mos Gate

Charge trapping and annealing in high-/spl kappa/ gate dielectrics

2004 ◽  
Vol 51 (6) ◽  
pp. 3143-3149 ◽  
Author(s):  
J.A. Felix ◽  
M.R. Shaneyfelt ◽  
D.M. Fleetwood ◽  
J.R. Schwank ◽  
P.E. Dodd ◽  
...  
Keyword(s):  
Gate Dielectrics ◽  
Charge Trapping

Optimised Multi-Scan H-Beam Annealing Of Mos Devices

1981 ◽  
Vol 4 ◽  
Author(s):  
C J Pollard ◽  
A E Glaccum ◽  
J D Speight
Keyword(s):  
Low Dose ◽  
Gate Dielectrics ◽  
Mos Devices ◽  
Device Processing ◽  
H Beam ◽  
Mos Gate ◽  
Mos Device

ABSTRACTThe optimum e-beam anneal conditions for damage free wafer annealing, implant activation uniformity across 3 inch wafers and low dose boron activation have been investigated with reference to the needs of MOS device processing. Some effects of e-beam annealing on MOS gate dielectrics are reported.

Charge trapping and degradation of HfO/sub 2//SiO/sub 2/ MOS gate stacks observed with enhanced CAFM

2006 ◽  
Vol 27 (3) ◽  
pp. 157-159 ◽  
Author(s):  
L. Aguilera ◽  
M. Porti ◽  
M. Nafria ◽  
X. Aymerich
Keyword(s):  
Charge Trapping ◽  
Gate Stacks ◽  
Mos Gate

Charge trapping behaviour in deposited and grown thin metal-oxide-semiconductor gate dielectrics

1997 ◽  
Vol 296 (1-2) ◽  
pp. 37-40 ◽  
Author(s):  
V. Ramgopal Rao ◽  
W. Hansch ◽  
H. Baumgärtner ◽  
I. Eisele ◽  
D.K. Sharma ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Gate Dielectrics ◽  
Charge Trapping ◽  
Metal Oxide Semiconductor ◽  
Thin Metal ◽  
Oxide Semiconductor

Charge Trapping in HfYOx Gate Dielectrics on Strained-Si

2019 ◽  
Vol 25 (3) ◽  
pp. 163-168 ◽  
Author(s):  
Bibhas Majhi ◽  
Chandreswar Mahata ◽  
C.K. Maiti
Keyword(s):  
Gate Dielectrics ◽  
Charge Trapping ◽  
Strained Si
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