Electrical and charge trapping properties of HfO2/Al2O3 bilayer gate dielectrics on In0.53Ga0.47As substrates

2012 ◽  
Author(s):  
A. K. Ghosh ◽  
T. Das ◽  
C. Mukherjee ◽  
A. S. Bandyopadhyay ◽  
G. K. Dalapati ◽  
...  
Keyword(s):  
Gate Dielectrics ◽  
Charge Trapping

Charge trapping and annealing in high-/spl kappa/ gate dielectrics

2004 ◽  
Vol 51 (6) ◽  
pp. 3143-3149 ◽  
Author(s):  
J.A. Felix ◽  
M.R. Shaneyfelt ◽  
D.M. Fleetwood ◽  
J.R. Schwank ◽  
P.E. Dodd ◽  
...  
Keyword(s):  
Gate Dielectrics ◽  
Charge Trapping

Charge trapping behaviour in deposited and grown thin metal-oxide-semiconductor gate dielectrics

1997 ◽  
Vol 296 (1-2) ◽  
pp. 37-40 ◽  
Author(s):  
V. Ramgopal Rao ◽  
W. Hansch ◽  
H. Baumgärtner ◽  
I. Eisele ◽  
D.K. Sharma ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Gate Dielectrics ◽  
Charge Trapping ◽  
Metal Oxide Semiconductor ◽  
Thin Metal ◽  
Oxide Semiconductor

Charge Trapping in HfYOx Gate Dielectrics on Strained-Si

2019 ◽  
Vol 25 (3) ◽  
pp. 163-168 ◽  
Author(s):  
Bibhas Majhi ◽  
Chandreswar Mahata ◽  
C.K. Maiti
Keyword(s):  
Gate Dielectrics ◽  
Charge Trapping ◽  
Strained Si

High Quality Ultrathin Gate Dielectrics Prepared by In-Situ RTP

1995 ◽  
Vol 387 ◽  
Author(s):  
L. K. Han ◽  
M. Bhat ◽  
J. Yan ◽  
D. Wristers ◽  
D. L. Kwong
Keyword(s):  
Gate Dielectric ◽  
Defect Density ◽  
Gate Dielectrics ◽  
Charge Trapping ◽  
Interface State ◽  
High Quality ◽  
Hot Carrier ◽  
Thermal Oxide ◽  
State Generation

AbstractThis paper reports on the formation of high quality ultrathin oxynitride gate dielectric by in-situ rapid thermal multiprocessing. Four such gate dielectrics are discussed here; (i) in-situ NO-annealed SiO2, (ii) N2O- or NO- or O2-grown bottom oxide/RTCVD SiO2/thermal oxide, (iii) N2O-grown bottom oxide/Si3N4/N2O-oxide (ONO) and (iv) N2O-grown bottom oxide/RTCVD SiO2/N2O-oxide. Results show that capacitors with NO-based oxynitride gate dielectrics, stacked oxynitride gate dielectrics with varying quality of bottom oxide (O2/N2O/NO), and the ONO structures show high endurance to interface degradation, low defect-density and high charge-to-breakdown compared to thermal oxide. The N2O-last reoxidation step used in the stacked dielectrics and ONO structures is seen to suppress charge trapping and interface state generation under Fowler-Nordheim injection. The stacked oxynitride gate dielectrics also show excellent MOSFET performance in terms of transconductance and mobility. While the current drivability and mobilities are found to be comparable to thermal oxide for N-channel MOSFET's, the hot-carrier immunity of N-channel MOSFET's with the N2O-oxide/CVD-SiO2/N2O-oxide gate dielectrics is found to be significantly enhanced over that of conventional thermal oxide.

Charge trapping in HfO2 and HfSiO4 MOS gate dielectrics

2006 ◽  
Vol 50 (9-10) ◽  
pp. 1670-1672 ◽  
Author(s):  
Kyuhwan Chang ◽  
Feng-Ming Chang ◽  
Jerzy Ruzyllo
Keyword(s):  
Gate Dielectrics ◽  
Charge Trapping ◽  
Mos Gate
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