Ballistic transport simulation of acceptor–donor C3N/C3B double-wall hetero-nanotube field effect transistors

Jianwei Zhao; Na Cheng; Yuanyuan He

doi:10.1039/c9cp03456k

Ballistic transport simulation of acceptor–donor C3N/C3B double-wall hetero-nanotube field effect transistors

Physical Chemistry Chemical Physics ◽

10.1039/c9cp03456k ◽

2019 ◽

Vol 21 (35) ◽

pp. 19567-19574 ◽

Cited By ~ 1

Author(s):

Jianwei Zhao ◽

Na Cheng ◽

Yuanyuan He

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Ballistic Transport ◽

Channel Structure ◽

Potential Candidate ◽

Next Generation ◽

One Dimensional ◽

Transport Simulation ◽

The One ◽

Double Wall

The one-dimensional (1D) acceptor–donor (A–D) hetero-nanotube (HNT) has attracted much attention as a potential candidate for a channel structure of next-generation field effect transistors (FETs).

Download Full-text

Characteristics of field-effect transistors using the one-dimensional extended hydrocarbon [7]phenacene

Applied Physics Letters ◽

10.1063/1.3540648 ◽

2011 ◽

Vol 98 (1) ◽

pp. 013303 ◽

Cited By ~ 33

Author(s):

Yasuyuki Sugawara ◽

Yumiko Kaji ◽

Keiko Ogawa ◽

Ritsuko Eguchi ◽

Shohei Oikawa ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

One Dimensional ◽

The One

Download Full-text

Designing band-to-band tunneling field-effect transistors with 2D semiconductors for next-generation low-power VLSI

2015 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2015.7409682 ◽

2015 ◽

Cited By ~ 11

Author(s):

Wei Cao ◽

Junkai Jiang ◽

Jiahao Kang ◽

Deblina Sarkar ◽

Wei Liu ◽

...

Keyword(s):

Low Power ◽

Field Effect ◽

Field Effect Transistors ◽

Next Generation ◽

2D Semiconductors ◽

Band To Band Tunneling ◽

Tunneling Field Effect Transistors

Download Full-text

One-dimensional (1D) micro/nanostructures of organic semiconductors for field-effect transistors

Science China Chemistry ◽

10.1007/s11426-015-5410-1 ◽

2015 ◽

Vol 58 (6) ◽

pp. 937-946 ◽

Cited By ~ 14

Author(s):

Yu-Qing Zheng ◽

Jie-Yu Wang ◽

Jian Pei

Keyword(s):

Organic Semiconductors ◽

Field Effect ◽

Field Effect Transistors ◽

One Dimensional

Download Full-text

Comparative Performance Analysis of Nanowire and Nanotube Field Effect Transistors

Advances in Computer and Electrical Engineering - Innovative Applications of Nanowires for Circuit Design ◽

10.4018/978-1-7998-6467-7.ch003 ◽

2021 ◽

pp. 54-70

Author(s):

Raj Kumar ◽

Shashi Bala ◽

Arvind Kumar

Keyword(s):

Performance Analysis ◽

Field Effect ◽

Field Effect Transistors ◽

Ballistic Transport ◽

High Mobility ◽

Short Channel Effects ◽

Short Channel ◽

Comparative Performance ◽

Channel Effects ◽

And Performance

To have enhanced drive current and diminish short channel effects, planer MOS transistors have migrated from single-gate devices to three-dimensional multi-gate MOSFETs. The gate-all-around nanowire field-effect transistor (GAA NWFET) and nanotube or double gate-all-around field-effect transistors (DGGA-NTFET) have been proposed to deal with short channel effects and performance relates issues. Nanowire and nanotube-based field-effect transistors can be considered as leading candidates for nanoscale devices due to their superior electrostatic controllability, and ballistic transport properties. In this work, the performance of GAA NWFETs and DGAA-NT FETs will be analyzed and compared. III-V semiconductor materials as a channel will also be employed due to their high mobility over silicon. Performance analysis of junctionless nanowire and nanotube FETs will also be compared and presented.

Download Full-text

Stretched Contact Printing of One-Dimensional Nanostructures for Hybrid Inorganic–Organic Field Effect Transistors

The Journal of Physical Chemistry C ◽

10.1021/jp210341g ◽

2012 ◽

Vol 116 (12) ◽

pp. 7118-7125 ◽

Cited By ~ 20

Author(s):

Gen-Wen Hsieh ◽

JinJin Wang ◽

Ken Ogata ◽

John Robertson ◽

Stephan Hofmann ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Organic Field Effect Transistors ◽

Contact Printing ◽

One Dimensional ◽

One Dimensional Nanostructures

Download Full-text

Quantum Transport Simulation of Ultrathin and Ultrashort Silicon-On-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.42.7238 ◽

2003 ◽

Vol 42 (Part 1, No. 12) ◽

pp. 7238-7243 ◽

Cited By ~ 15

Author(s):

Hideaki Tsuchiya ◽

Motoki Horino ◽

Matsuto Ogawa ◽

Tanroku Miyoshi

Keyword(s):

Metal Oxide ◽

Quantum Transport ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Transport Simulation

Download Full-text

One-Dimensional Field-Effect Transistors

One-Dimensional Nanostructures ◽

10.1002/9781118310342.ch24 ◽

2013 ◽

pp. 503-513

Author(s):

Joachim Knoch

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

One Dimensional

Download Full-text

RSDFT-NEGF Quantum Transport Simulation of Ultra-Small Field-Effect Transistors

2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) ◽

10.1109/edtm47692.2020.9117827 ◽

2020 ◽

Author(s):

Nobuya Mori ◽

Gennady Mil'nikov ◽

Jun-Ichi Iwata ◽

Atsushi Oshiyama

Keyword(s):

Quantum Transport ◽

Field Effect ◽

Field Effect Transistors ◽

Small Field ◽

Transport Simulation

Download Full-text

Tunneling field effect transistors (TFETs) with 3D fin-shaped channel structure and their electrical characteristics

Solid-State Electronics ◽

10.1016/j.sse.2019.01.003 ◽

2019 ◽

Vol 154 ◽

pp. 1-6

Author(s):

Donghwan Lim ◽

Hoonhee Han ◽

Changhwan Choi

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Channel Structure ◽

Electrical Characteristics ◽

Tunneling Field Effect Transistors

Download Full-text

Anisotropic interfacial properties of monolayer C2N field effect transistors

Physical Chemistry Chemical Physics ◽

10.1039/d0cp04450d ◽

2020 ◽

Vol 22 (48) ◽

pp. 28074-28085

Author(s):

Mi-Mi Dong ◽

Guang-Ping Zhang ◽

Zong-Liang Li ◽

Ming-Lang Wang ◽

Chuan-Kui Wang ◽

...

Keyword(s):

Band Gap ◽

Field Effect ◽

Field Effect Transistors ◽

Interfacial Properties ◽

Next Generation ◽

High Carrier ◽

Optoelectronic Applications

Monolayer C2N is promising for next-generation electronic and optoelectronic applications due to its appropriate band gap and high carrier efficiency.

Download Full-text