Theoretical performance estimation of silicene, germanene, and graphene nanoribbon field-effect transistors under ballistic transport

2014 ◽  
Vol 7 (3) ◽  
pp. 035102 ◽  
Author(s):  
Shiro Kaneko ◽  
Hideaki Tsuchiya ◽  
Yoshinari Kamakura ◽  
Nobuya Mori ◽  
Matsuto Ogawa
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Ballistic Transport ◽  
Graphene Nanoribbon ◽  
Performance Estimation ◽  
Theoretical Performance

Quasi-ballistic transport model for top- and back-gated graphene nanoribbon field-effect transistors

2016 ◽  
Vol 55 (4S) ◽  
pp. 04EK01 ◽  
Author(s):  
Shuyan Hu ◽  
Guangxi Hu ◽  
Lingli Wang ◽  
Ran Liu ◽  
Lirong Zheng
Keyword(s):  
Field Effect ◽  
Transport Model ◽  
Field Effect Transistors ◽  
Ballistic Transport ◽  
Graphene Nanoribbon

New device structures for graphene nanoribbon field effect transistors

2016 ◽  
Vol 6 (3) ◽  
pp. 265-270 ◽  
Author(s):  
Mahdiar Ghadiry ◽  
Harith Ahmad ◽  
Chong Wu Yi ◽  
Asrulnizam Abd Manaf
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Graphene Nanoribbon ◽  
New Device ◽  
Device Structures

Exploiting Edge Effect to Control Generation Rate and Breakdown Voltage in Graphene Nanoribbon Field Effect Transistors

Plasmonics ◽  
2015 ◽  
Vol 11 (2) ◽  
pp. 573-577 ◽  
Author(s):  
Mahdiar Ghadiry ◽  
Harith Ahmad ◽  
Alieh Hivechi ◽  
Fatemeh Tavakoli ◽  
Asrulnizam Abd Manaf
Keyword(s):  
Breakdown Voltage ◽  
Edge Effect ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Graphene Nanoribbon ◽  
Generation Rate

Comparative Performance Analysis of Nanowire and Nanotube Field Effect Transistors

2021 ◽  
pp. 54-70
Author(s):  
Raj Kumar ◽  
Shashi Bala ◽  
Arvind Kumar
Keyword(s):  
Performance Analysis ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Ballistic Transport ◽  
High Mobility ◽  
Short Channel Effects ◽  
Short Channel ◽  
Comparative Performance ◽  
Channel Effects ◽  
And Performance

To have enhanced drive current and diminish short channel effects, planer MOS transistors have migrated from single-gate devices to three-dimensional multi-gate MOSFETs. The gate-all-around nanowire field-effect transistor (GAA NWFET) and nanotube or double gate-all-around field-effect transistors (DGGA-NTFET) have been proposed to deal with short channel effects and performance relates issues. Nanowire and nanotube-based field-effect transistors can be considered as leading candidates for nanoscale devices due to their superior electrostatic controllability, and ballistic transport properties. In this work, the performance of GAA NWFETs and DGAA-NT FETs will be analyzed and compared. III-V semiconductor materials as a channel will also be employed due to their high mobility over silicon. Performance analysis of junctionless nanowire and nanotube FETs will also be compared and presented.

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