Observation of a tunneling magnetoresistance effect in magnetic tunneling junctions with a high resistance ferromagnetic oxide Fe2⋅5Mn0⋅5O4 electrode

2011 ◽  
Vol 151 (18) ◽  
pp. 1296-1299
Author(s):  
Eiji Shikoh ◽  
Teruo Kanki ◽  
Hidekazu Tanaka ◽  
Teruya Shinjo ◽  
Masashi Shiraishi
Keyword(s):  
High Resistance ◽  
Tunneling Magnetoresistance ◽  
Magnetoresistance Effect ◽  
Tunneling Junctions ◽  
Magnetic Tunneling Junctions ◽  
Magnetic Tunneling

Large tunneling magnetoresistance in magnetic tunneling junctions based on two-dimensional CrX3 (X = Br, I) monolayers

Nanoscale ◽  
2018 ◽  
Vol 10 (47) ◽  
pp. 22196-22202 ◽  
Author(s):  
Longfei Pan ◽  
Le Huang ◽  
Mianzeng Zhong ◽  
Xiang-Wei Jiang ◽  
Hui-Xiong Deng ◽  
...  
Keyword(s):  
Tunneling Magnetoresistance ◽  
Two Dimensional ◽  
Tunneling Junctions ◽  
Magnetic Tunneling Junctions ◽  
Magnetic Tunneling

The large tunneling magnetoresistance (TMR) effect was observed in magnetic tunneling junctions (MTJs), which have atomic thickness because of the use of two-dimensional ferromagnetic CrX3 (X = Br, I) monolayers.

Spin polarization of Co2FeSi full-Heusler alloy and tunneling magnetoresistance of its magnetic tunneling junctions

2006 ◽  
Vol 89 (8) ◽  
pp. 082512 ◽  
Author(s):  
Z. Gercsi ◽  
A. Rajanikanth ◽  
Y. K. Takahashi ◽  
K. Hono ◽  
M. Kikuchi ◽  
...  
Keyword(s):  
Spin Polarization ◽  
Heusler Alloy ◽  
Tunneling Magnetoresistance ◽  
Tunneling Junctions ◽  
Magnetic Tunneling Junctions ◽  
Magnetic Tunneling ◽  
Full Heusler

Electrically tunable tunneling rectification magnetoresistance in magnetic tunneling junctions with asymmetric barriers

Nanoscale ◽  
2017 ◽  
Vol 9 (41) ◽  
pp. 16073-16078 ◽  
Author(s):  
Jing Wang ◽  
Qikun Huang ◽  
Peng Shi ◽  
Kun Zhang ◽  
Yufeng Tian ◽  
...  
Keyword(s):  
Tunneling Magnetoresistance ◽  
Tunneling Junctions ◽  
Magnetic Tunneling Junctions ◽  
Magnetic Tunneling ◽  
Asymmetric Barriers

Tunneling rectification magnetoresistance is demonstrated in magnetic tunneling junctions with asymmetric barriers by combining rectification and tunneling magnetoresistance effects.

Pulse voltage-induced dynamic magnetization switching in magnetic tunneling junctions with high resistance-area product

2012 ◽  
Vol 101 (10) ◽  
pp. 102406 ◽  
Author(s):  
Yoichi Shiota ◽  
Shinji Miwa ◽  
Takayuki Nozaki ◽  
Frédéric Bonell ◽  
Norikazu Mizuochi ◽  
...  
Keyword(s):  
High Resistance ◽  
Pulse Voltage ◽  
Magnetization Switching ◽  
Dynamic Magnetization ◽  
Tunneling Junctions ◽  
Magnetic Tunneling Junctions ◽  
Area Product ◽  
Magnetic Tunneling
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