Pulse voltage-induced dynamic magnetization switching in magnetic tunneling junctions with high resistance-area product

2012 ◽  
Vol 101 (10) ◽  
pp. 102406 ◽  
Author(s):  
Yoichi Shiota ◽  
Shinji Miwa ◽  
Takayuki Nozaki ◽  
Frédéric Bonell ◽  
Norikazu Mizuochi ◽  
...  
Keyword(s):  
High Resistance ◽  
Pulse Voltage ◽  
Magnetization Switching ◽  
Dynamic Magnetization ◽  
Tunneling Junctions ◽  
Magnetic Tunneling Junctions ◽  
Area Product ◽  
Magnetic Tunneling

scholarly journals Perpendicular current-driven magnetization switching in free layer of magnetic tunneling junctions and MRAM

2006 ◽  
Vol 55 (2) ◽  
pp. 860
Author(s):  
Peng Zi-Long ◽  
Han Xiu-Feng ◽  
Zhao Su-Fen ◽  
Wei Hong-Xiang ◽  
Du Guan-Xiang ◽  
...  
Keyword(s):  
Free Layer ◽  
Magnetization Switching ◽  
Tunneling Junctions ◽  
Magnetic Tunneling Junctions ◽  
Magnetic Tunneling

scholarly journals Low potential barrier height effects in magnetic tunneling junctions

2007 ◽  
Vol 76 (21) ◽  
Author(s):  
E. S. Cruz de Gracia ◽  
L. S. Dorneles ◽  
L. F. Schelp ◽  
S. R. Teixeira ◽  
M. N. Baibich
Keyword(s):  
Barrier Height ◽  
Potential Barrier ◽  
Potential Barrier Height ◽  
Tunneling Junctions ◽  
Magnetic Tunneling Junctions ◽  
Magnetic Tunneling

Failure of exchange-biased low resistance magnetic tunneling junctions upon thermal treatment

2002 ◽  
Vol 91 (1) ◽  
pp. 217 ◽  
Author(s):  
J. H. Lee ◽  
H. D. Jeong ◽  
H. Kyung ◽  
C. S. Yoon ◽  
C. K. Kim ◽  
...  
Keyword(s):  
Thermal Treatment ◽  
Low Resistance ◽  
Tunneling Junctions ◽  
Magnetic Tunneling Junctions ◽  
Magnetic Tunneling
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