Electrically tunable tunneling rectification magnetoresistance in magnetic tunneling junctions with asymmetric barriers

Nanoscale ◽  
2017 ◽  
Vol 9 (41) ◽  
pp. 16073-16078 ◽  
Author(s):  
Jing Wang ◽  
Qikun Huang ◽  
Peng Shi ◽  
Kun Zhang ◽  
Yufeng Tian ◽  
...  

Tunneling rectification magnetoresistance is demonstrated in magnetic tunneling junctions with asymmetric barriers by combining rectification and tunneling magnetoresistance effects.

Nanoscale ◽  
2018 ◽  
Vol 10 (47) ◽  
pp. 22196-22202 ◽  
Author(s):  
Longfei Pan ◽  
Le Huang ◽  
Mianzeng Zhong ◽  
Xiang-Wei Jiang ◽  
Hui-Xiong Deng ◽  
...  

The large tunneling magnetoresistance (TMR) effect was observed in magnetic tunneling junctions (MTJs), which have atomic thickness because of the use of two-dimensional ferromagnetic CrX3 (X = Br, I) monolayers.


2006 ◽  
Vol 89 (8) ◽  
pp. 082512 ◽  
Author(s):  
Z. Gercsi ◽  
A. Rajanikanth ◽  
Y. K. Takahashi ◽  
K. Hono ◽  
M. Kikuchi ◽  
...  

2007 ◽  
Vol 76 (21) ◽  
Author(s):  
E. S. Cruz de Gracia ◽  
L. S. Dorneles ◽  
L. F. Schelp ◽  
S. R. Teixeira ◽  
M. N. Baibich

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