Dependency of tunneling magneto-resistance on Fe insertion-layer thickness in Co2Fe6B2/MgO-based magnetic tunneling junctions

2015 ◽  
Vol 117 (15) ◽  
pp. 153901 ◽  
Author(s):  
Kyo-Suk Chae ◽  
Jea-Gun Park
Keyword(s):  
Layer Thickness ◽  
Tunneling Junctions ◽  
Magnetic Tunneling Junctions ◽  
Magnetic Tunneling ◽  
Magneto Resistance

Giant tunnel magneto-resistance in graphene based molecular tunneling junction

Nanoscale ◽  
2016 ◽  
Vol 8 (6) ◽  
pp. 3432-3438 ◽  
Author(s):  
Bin Wang ◽  
Jianwei Li ◽  
Yunjin Yu ◽  
Yadong Wei ◽  
Jian Wang ◽  
...  
Keyword(s):  
Graphene Nanoribbon ◽  
Tunneling Junction ◽  
Tunneling Junctions ◽  
Magnetic Tunneling Junctions ◽  
Magnetic Tunneling ◽  
Magneto Resistance

We propose and theoretically investigate a class of stable zigzag graphene nanoribbon (ZGNR) based molecular magnetic tunneling junctions (MTJs).

scholarly journals Low potential barrier height effects in magnetic tunneling junctions

2007 ◽  
Vol 76 (21) ◽  
Author(s):  
E. S. Cruz de Gracia ◽  
L. S. Dorneles ◽  
L. F. Schelp ◽  
S. R. Teixeira ◽  
M. N. Baibich
Keyword(s):  
Barrier Height ◽  
Potential Barrier ◽  
Potential Barrier Height ◽  
Tunneling Junctions ◽  
Magnetic Tunneling Junctions ◽  
Magnetic Tunneling

Failure of exchange-biased low resistance magnetic tunneling junctions upon thermal treatment

2002 ◽  
Vol 91 (1) ◽  
pp. 217 ◽  
Author(s):  
J. H. Lee ◽  
H. D. Jeong ◽  
H. Kyung ◽  
C. S. Yoon ◽  
C. K. Kim ◽  
...  
Keyword(s):  
Thermal Treatment ◽  
Low Resistance ◽  
Tunneling Junctions ◽  
Magnetic Tunneling Junctions ◽  
Magnetic Tunneling

Large tunneling magnetoresistance in magnetic tunneling junctions based on two-dimensional CrX3 (X = Br, I) monolayers

Nanoscale ◽  
2018 ◽  
Vol 10 (47) ◽  
pp. 22196-22202 ◽  
Author(s):  
Longfei Pan ◽  
Le Huang ◽  
Mianzeng Zhong ◽  
Xiang-Wei Jiang ◽  
Hui-Xiong Deng ◽  
...  
Keyword(s):  
Tunneling Magnetoresistance ◽  
Two Dimensional ◽  
Tunneling Junctions ◽  
Magnetic Tunneling Junctions ◽  
Magnetic Tunneling

The large tunneling magnetoresistance (TMR) effect was observed in magnetic tunneling junctions (MTJs), which have atomic thickness because of the use of two-dimensional ferromagnetic CrX3 (X = Br, I) monolayers.

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