Steady-state and transient electron transport within bulk wurtzite zinc oxide

2010 ◽  
Vol 150 (43-44) ◽  
pp. 2182-2185 ◽  
Author(s):  
Stephen K. O’Leary ◽  
Brian E. Foutz ◽  
Michael S. Shur ◽  
Lester F. Eastman
Keyword(s):  
Zinc Oxide ◽  
Steady State ◽  
Electron Transport

Steady-state and transient electron transport within bulk wurtzite zinc oxide and the resultant electron device performance

2013 ◽  
Vol 1577 ◽  
Author(s):  
Walid A. Hadi ◽  
Michael S. Shur ◽  
Stephen K. O’Leary
Keyword(s):  
Monte Carlo ◽  
Zinc Oxide ◽  
Steady State ◽  
Electron Transport ◽  
Monte Carlo Simulations ◽  
Indium Nitride ◽  
Device Performance ◽  
Electron Drift ◽  
Electron Device ◽  
Velocity Enhancement

ABSTRACTWe review some recent results related to the steady-state and transient electron transport that occurs within bulk wurtzite zinc oxide. We employ three-valley Monte Carlo simulations of the electron transport within this material for the purposes of this analysis. Using these results, we devise a means of rendering transparent the electron drift velocity enhancement offered by transient electron transport over steady-state electron transport. A comparison, with results corresponding to gallium nitride, indium nitride, and aluminum nitride, is provided. The device implications of these results are then presented.

Steady-State and Transient Electron Transport in ZnO: Recent Progress

2011 ◽  
Vol 1327 ◽  
Author(s):  
Walid A. Hadi ◽  
Michael Shur ◽  
Lester F. Eastman ◽  
Stephen K. O’Leary
Keyword(s):  
Zinc Oxide ◽  
Gallium Nitride ◽  
Steady State ◽  
Electron Transport ◽  
Electric Field ◽  
Thermal Equilibrium ◽  
Recent Progress ◽  
Constant Electric Field ◽  
Simulation Approach ◽  
State Electron

ABSTRACTWe briefly review some recent results on the steady-state and transient electron transport that occurs within bulk wurtzite zinc oxide. These results were obtained using an ensemble semi-classical three-valley Monte Carlo simulation approach. They showed that for electric field strengths in excess of 180 kV/cm, the steady-state electron drift velocity associated with bulk wurtzite zinc oxide exceeds that associated with bulk wurtzite gallium nitride. The transient electron transport that occurs within bulk wurtzite zinc oxide was studied by examining how electrons, initially in thermal equilibrium, respond to the sudden application of a constant electric field. These transient electron transport results demonstrated that for devices with dimensions smaller than 0.1 μm, gallium nitride based devices will offer the advantage, owing to their superior transient electron transport, while for devices with dimensions greater than 0.1 μm, zinc oxide based devices will offer the advantage, owing to their superior high-field steady-state electron transport.

The sensitivity of the steady-state electron transport within bulk wurtzite zinc oxide to variations in the non-parabolicity coefficient

2011 ◽  
Vol 151 (12) ◽  
pp. 874-878 ◽  
Author(s):  
Walid A. Hadi ◽  
Stephen K. O’Leary ◽  
Michael S. Shur ◽  
Lester F. Eastman
Keyword(s):  
Zinc Oxide ◽  
Steady State ◽  
Electron Transport ◽  
State Electron

The electron transport that occurs within wurtzite zinc oxide and the application of stress

MRS Advances ◽  
2017 ◽  
Vol 2 (48) ◽  
pp. 2627-2632 ◽  
Author(s):  
Poppy Siddiqua ◽  
Michael S. Shur ◽  
Stephen K. O’Leary
Keyword(s):  
Monte Carlo ◽  
Zinc Oxide ◽  
Electron Transport ◽  
Velocity Field ◽  
Monte Carlo Simulations ◽  
Significant Role ◽  
Energy Gap ◽  
Device Application ◽  
The Impact

ABSTRACTWe examine how stress has the potential to shape the character of the electron transport that occurs within ZnO. In order to narrow the scope of this analysis, we focus on a determination of the velocity-field characteristics associated with bulk wurtzite ZnO. Monte Carlo simulations of the electron transport are pursued for the purposes of this analysis. Rather than focusing on the impact of stress in of itself, instead we focus on the changes that occur to the energy gap through the application of stress, i.e., energy gap variations provide a proxy for the amount of stress. Our results demonstrate that stress plays a significant role in shaping the form of the velocity-field characteristics associated with ZnO. This dependence could potentially be exploited for device application purposes.

A detailed characterization of the transient electron transport within zinc oxide, gallium nitride, and gallium arsenide

2012 ◽  
Vol 112 (12) ◽  
pp. 123722 ◽  
Author(s):  
Walid A. Hadi ◽  
Shamsul Chowdhury ◽  
Michael S. Shur ◽  
Stephen K. O'Leary
Keyword(s):  
Gallium Arsenide ◽  
Zinc Oxide ◽  
Gallium Nitride ◽  
Electron Transport ◽  
Detailed Characterization

A Monte Carlo study of electron‐hole scattering and steady‐state minority‐electron transport in GaAs

1988 ◽  
Vol 53 (22) ◽  
pp. 2205-2207 ◽  
Author(s):  
K. Sadra ◽  
C. M. Maziar ◽  
B. G. Streetman ◽  
D. S. Tang
Keyword(s):  
Monte Carlo ◽  
Steady State ◽  
Electron Transport ◽  
Monte Carlo Study ◽  
Electron Hole

scholarly journals Updating the steady state model of C4 photosynthesis

2021 ◽  
Author(s):  
Susanne von Caemmerer
Keyword(s):  
Steady State ◽  
Electron Transport ◽  
Electron Transport Rate ◽  
Transport Rate ◽  
Initial Slope ◽  
Carboxylase Activity ◽  
Quantitative Correlation ◽  
Steady State Model ◽  
State Models

AbstractC4 plants play a key role in world agriculture. For example, C4 crops such as maize and sorghum are major contributors to both first and third world food production and the C4 grasses sugarcane; miscanthus and switchgrass are major plant sources of bioenergy. In the challenge to manipulate and enhance C4 photosynthesis, steady state models of leaf photosynthesis provide and important tool for gas exchange analysis and thought experiments that can explore photosynthetic pathway changes. Here the C4 photosynthetic model by von Caemmerer and Furbank (1999) has been updated with new kinetic parameterisation and temperature dependencies added. The parameterisation was derived from experiments on the C4 monocot, Setaria viridis, which for the first time provides a cohesive parametrisation. Mesophyll conductance and its temperature dependence have also been included, as this is an important step in the quantitative correlation between the initial slope of the CO2 response curve of CO2 assimilation and in vitro PEP carboxylase activity. Furthermore, the equations for chloroplast electron transport have been updated to include cyclic electron transport flow and equations have been added to calculate electron transport rate from measured CO2 assimilation rates.HighlightThe C4 photosynthesis model by von Caemmerer and Furbank (1999) has been updated. It now includes temperature dependencies and equations to calculate electron transport rate from measured CO2 assimilation rates.

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