Steady-state and transient electron transport within bulk wurtzite zinc oxide and the resultant electron device performance

2013 ◽  
Vol 1577 ◽  
Author(s):  
Walid A. Hadi ◽  
Michael S. Shur ◽  
Stephen K. O’Leary
Keyword(s):  
Monte Carlo ◽  
Zinc Oxide ◽  
Steady State ◽  
Electron Transport ◽  
Monte Carlo Simulations ◽  
Indium Nitride ◽  
Device Performance ◽  
Electron Drift ◽  
Electron Device ◽  
Velocity Enhancement

ABSTRACTWe review some recent results related to the steady-state and transient electron transport that occurs within bulk wurtzite zinc oxide. We employ three-valley Monte Carlo simulations of the electron transport within this material for the purposes of this analysis. Using these results, we devise a means of rendering transparent the electron drift velocity enhancement offered by transient electron transport over steady-state electron transport. A comparison, with results corresponding to gallium nitride, indium nitride, and aluminum nitride, is provided. The device implications of these results are then presented.

The electron transport that occurs within wurtzite zinc oxide and the application of stress

MRS Advances ◽  
2017 ◽  
Vol 2 (48) ◽  
pp. 2627-2632 ◽  
Author(s):  
Poppy Siddiqua ◽  
Michael S. Shur ◽  
Stephen K. O’Leary
Keyword(s):  
Monte Carlo ◽  
Zinc Oxide ◽  
Electron Transport ◽  
Velocity Field ◽  
Monte Carlo Simulations ◽  
Significant Role ◽  
Energy Gap ◽  
Device Application ◽  
The Impact

ABSTRACTWe examine how stress has the potential to shape the character of the electron transport that occurs within ZnO. In order to narrow the scope of this analysis, we focus on a determination of the velocity-field characteristics associated with bulk wurtzite ZnO. Monte Carlo simulations of the electron transport are pursued for the purposes of this analysis. Rather than focusing on the impact of stress in of itself, instead we focus on the changes that occur to the energy gap through the application of stress, i.e., energy gap variations provide a proxy for the amount of stress. Our results demonstrate that stress plays a significant role in shaping the form of the velocity-field characteristics associated with ZnO. This dependence could potentially be exploited for device application purposes.

How changes in the crystal temperature and the doping concentration impact upon bulk wurtzite zinc oxide’s electron transport response

MRS Advances ◽  
2019 ◽  
Vol 4 (50) ◽  
pp. 2673-2678
Author(s):  
Poppy Siddiqua ◽  
Walid A. Hadi ◽  
Michael S. Shur ◽  
Stephen K. O’Leary
Keyword(s):  
Monte Carlo ◽  
Steady State ◽  
Electron Transport ◽  
Drift Velocity ◽  
Doping Concentration ◽  
Electron Drift ◽  
Crystal Temperature ◽  
Transient Transport ◽  
Transport Response ◽  
The Impact

ABSTRACTThe role that changes in the crystal temperature and the doping concentration play in shaping the character of the steady-state and transient transport response of electrons within bulk wurtzite zinc oxide will be examined. Monte Carlo electron transport simulations are drawn upon for the purposes of this analysis. We find that both the crystal temperature and the doping concentration greatly influence the character of the steady-state and transient electron transport response. In particular, for the case of steady-state electron transport, the peak drift velocity decreases by 30% as the crystal temperature is increased from 100 to 700 K, this decrease in velocity being only 20% as the doping concentration is increased from 1015 to 1019 cm-3. The impact on the transient electron drift velocity is not as acute.

MONTE CARLO SIMULATIONS OF ELECTRON DRIFT VELOCITIES IN THE NOBLE GASES AND THEIR MIXTURES

1979 ◽  
Vol 40 (C7) ◽  
pp. C7-63-C7-64
Author(s):  
A. J. Davies ◽  
J. Dutton ◽  
C. J. Evans ◽  
A. Goodings ◽  
P.K. Stewart
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Simulations ◽  
Noble Gases ◽  
Electron Drift

scholarly journals Monte Carlo simulations of electron transport in 4H-SiC using the DFT-calculated density of states

2021 ◽  
Author(s):  
Janusz Wozny ◽  
Andrii Kovalchuk ◽  
Zbigniew Lisik ◽  
Jacek Podgorski ◽  
Piotr Bugalski ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Monte Carlo ◽  
Electron Transport ◽  
Monte Carlo Simulations ◽  
Electric Fields ◽  
Density Of States ◽  
Electron Mobility ◽  
Crucial Issue ◽  
Calculated Density ◽  
Correct Calculation

AbstractWe carry out Monte Carlo simulations of electron transport in 4H-silicon carbide (4H-SiC) based on the numerically calculated density of states (DOS) to obtain the electron mobility at low electric fields. From the results, it can be concluded that a correct calculation of the DOS requires a very dense wavevector k-mesh when low electron kinetic energies are considered. The crucial issue is the numerical efficiency of the DOS calculation. We investigate the scaling efficiency when different numbers of cores are used.

A Monte Carlo study of electron‐hole scattering and steady‐state minority‐electron transport in GaAs

1988 ◽  
Vol 53 (22) ◽  
pp. 2205-2207 ◽  
Author(s):  
K. Sadra ◽  
C. M. Maziar ◽  
B. G. Streetman ◽  
D. S. Tang
Keyword(s):  
Monte Carlo ◽  
Steady State ◽  
Electron Transport ◽  
Monte Carlo Study ◽  
Electron Hole

A numerical study of the sedimentation of fibre suspensions

1998 ◽  
Vol 376 ◽  
pp. 149-182 ◽  
Author(s):  
MICHAEL B. MACKAPLOW ◽  
ERIC S. G. SHAQFEH
Keyword(s):  
Monte Carlo ◽  
Steady State ◽  
Monte Carlo Simulations ◽  
Numerical Study ◽  
Point Particle ◽  
Hydrodynamic Interactions ◽  
Dynamic Simulations ◽  
Slender Body Theory ◽  
Fibre Suspensions ◽  
The Mean

The sedimentation of fibre suspensions at low Reynolds number is studied using two different, but complementary, numerical simulation methods: (1) Monte Carlo simulations, which consider interparticle hydrodynamic interactions at all orders within the slender-body theory approximation (Mackaplow & Shaqfeh 1996), and (ii) dynamic simulations, which consider point–particle interactions and are accurate for suspension concentrations of nl3=1, where n and l are the number density and characteristic half-length of the fibres, respectively. For homogeneous, isotropic suspensions, the Monte Carlo simulations show that the hindrance of the mean sedimentation speed is linear in particle concentration up to at least nl3=7. The speed is well predicted by a new dilute theory that includes the effect of two-body interactions. Our dynamic simulations of dilute suspensions, however, show that interfibre hydrodynamic interactions cause the spatial and orientational distributions to become inhomogeneous and anisotropic. Most of the fibres migrate into narrow streamers aligned in the direction of gravity. This drives a downward convective flow within the streamers which serves to increase the mean fibre sedimentation speed. A steady-state orientation distribution develops which strongly favours fibre alignment with gravity. Although the distribution reaches a steady state, individual fibres continue to rotate in a manner that can be qualitatively described as a flipping between the two orientations aligned with gravity. The simulation results are in good agreement with published experimental data.

Full band Monte Carlo simulations of high-field electron transport in wide band-gap semiconductors

2004 ◽  
Vol 19 (4) ◽  
pp. S206-S208 ◽  
Author(s):  
Niels Fitzer ◽  
Angelika Kuligk ◽  
Ronald Redmer ◽  
Martin Städele ◽  
Stephen M Goodnick ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Electron Transport ◽  
Monte Carlo Simulations ◽  
Band Gap ◽  
High Field ◽  
Wide Band ◽  
Wide Band Gap ◽  
Field Electron ◽  
Full Band ◽  
Wide Band Gap Semiconductors
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