Steady-State and Transient Electron Transport in ZnO: Recent Progress

2011 ◽  
Vol 1327 ◽  
Author(s):  
Walid A. Hadi ◽  
Michael Shur ◽  
Lester F. Eastman ◽  
Stephen K. O’Leary
Keyword(s):  
Zinc Oxide ◽  
Gallium Nitride ◽  
Steady State ◽  
Electron Transport ◽  
Electric Field ◽  
Thermal Equilibrium ◽  
Recent Progress ◽  
Constant Electric Field ◽  
Simulation Approach ◽  
State Electron

ABSTRACTWe briefly review some recent results on the steady-state and transient electron transport that occurs within bulk wurtzite zinc oxide. These results were obtained using an ensemble semi-classical three-valley Monte Carlo simulation approach. They showed that for electric field strengths in excess of 180 kV/cm, the steady-state electron drift velocity associated with bulk wurtzite zinc oxide exceeds that associated with bulk wurtzite gallium nitride. The transient electron transport that occurs within bulk wurtzite zinc oxide was studied by examining how electrons, initially in thermal equilibrium, respond to the sudden application of a constant electric field. These transient electron transport results demonstrated that for devices with dimensions smaller than 0.1 μm, gallium nitride based devices will offer the advantage, owing to their superior transient electron transport, while for devices with dimensions greater than 0.1 μm, zinc oxide based devices will offer the advantage, owing to their superior high-field steady-state electron transport.

The sensitivity of the steady-state electron transport within bulk wurtzite zinc oxide to variations in the non-parabolicity coefficient

2011 ◽  
Vol 151 (12) ◽  
pp. 874-878 ◽  
Author(s):  
Walid A. Hadi ◽  
Stephen K. O’Leary ◽  
Michael S. Shur ◽  
Lester F. Eastman
Keyword(s):  
Zinc Oxide ◽  
Steady State ◽  
Electron Transport ◽  
State Electron

A detailed characterization of the transient electron transport within zinc oxide, gallium nitride, and gallium arsenide

2012 ◽  
Vol 112 (12) ◽  
pp. 123722 ◽  
Author(s):  
Walid A. Hadi ◽  
Shamsul Chowdhury ◽  
Michael S. Shur ◽  
Stephen K. O'Leary
Keyword(s):  
Gallium Arsenide ◽  
Zinc Oxide ◽  
Gallium Nitride ◽  
Electron Transport ◽  
Detailed Characterization

Thickness dependence of electron transport in pure a-Se photoconductive films

2014 ◽  
Vol 92 (7/8) ◽  
pp. 629-633 ◽  
Author(s):  
Derek Mortensen ◽  
George Belev ◽  
Kirill (Cyril) Koughia ◽  
Robert E. Johanson ◽  
S.O. Kasap
Keyword(s):  
Thin Films ◽  
Electron Transport ◽  
Electric Field ◽  
Density Of States ◽  
Electron Mobility ◽  
Constant Electric Field ◽  
Thickness Dependence ◽  
The Other ◽  
Electron Lifetime ◽  
Thickness Independent

Electron transport in vacuum-deposited a-Se films with thicknesses varying from 13 to 501 μm has been investigated by conventional time-of-flight (TOF) and interrupted field TOF experiments. To separate the influences of electric field and the thickness, all TOF experiments were performed at a constant electric field. It has been found that the electron mobility is relatively constant in thick films (L > 50 μm) and increases in thinner films (L < 50 μm) with decreasing thickness. On the other hand, the electron lifetime is relatively thickness independent in films with thickness L > 50 μm, but drops sharply in thin films when L < 50 μm. These observations can be explained based on the density of states model that includes three types of traps forming Gaussian-like distributions within the mobility gap as reported in Koughia et al. (J. Appl. Phys. 97, 033706 (2005)).

Nonequilibrium optical phonon generation by steady-state electron transport in quantum-cascade lasers

2002 ◽  
Vol 80 (23) ◽  
pp. 4303-4305 ◽  
Author(s):  
Vincenzo Spagnolo ◽  
Gaetano Scamarcio ◽  
Mariano Troccoli ◽  
Federico Capasso ◽  
Claire Gmachl ◽  
...  
Keyword(s):  
Steady State ◽  
Electron Transport ◽  
Optical Phonon ◽  
Quantum Cascade Lasers ◽  
Quantum Cascade ◽  
State Electron ◽  
Phonon Generation ◽  
Cascade Lasers

Steady-state electron transport in the III–V nitride semiconductors: A sensitivity analysis

2003 ◽  
Vol 32 (5) ◽  
pp. 327-334 ◽  
Author(s):  
Stephen K. O’Leary ◽  
Brian E. Foutz ◽  
Michael S. Shur ◽  
Lester F. Eastman
Keyword(s):  
Sensitivity Analysis ◽  
Steady State ◽  
Electron Transport ◽  
Nitride Semiconductors ◽  
State Electron
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