Deep-ultraviolet detectors based on oxygen-/fluorine-terminated (100) diamond

2016 ◽  
Vol 100 ◽  
pp. 258-265 ◽  
Author(s):  
F.N. Li ◽  
J.W. Zhang ◽  
X.L. Wang ◽  
Z.C. Liu ◽  
W. Wang ◽  
...  
Keyword(s):  
Ultraviolet Detectors ◽  
Deep Ultraviolet ◽  
Oxygen Fluorine

Nanocrystalline and Polycrystalline β-Ga2O3 Thin Films for Deep Ultraviolet Detectors

2020 ◽  
Vol 2 (10) ◽  
pp. 3358-3365
Author(s):  
Maria Isabel Pintor-Monroy ◽  
Bayron L. Murillo-Borjas ◽  
Manuel A. Quevedo-Lopez
Keyword(s):  
Thin Films ◽  
Ultraviolet Detectors ◽  
Deep Ultraviolet

Comprehensive Investigation of Single Crystal Diamond Deep-Ultraviolet Detectors

2012 ◽  
Vol 51 ◽  
pp. 090115 ◽  
Author(s):  
Meiyong Liao ◽  
Liwen Sang ◽  
Tokuyuku Teraji ◽  
Masataka Imura ◽  
Jose Alvarez ◽  
...  
Keyword(s):  
Single Crystal ◽  
Comprehensive Investigation ◽  
Ultraviolet Detectors ◽  
Single Crystal Diamond ◽  
Deep Ultraviolet

scholarly journals Suspended tungsten trioxide (WO3) gate AlGaN/GaN heterostructure deep ultraviolet detectors with integrated micro-heater

2019 ◽  
Vol 27 (25) ◽  
pp. 36405 ◽  
Author(s):  
Jianwen Sun ◽  
Teng Zhan ◽  
Zewen Liu ◽  
Junxi Wang ◽  
Xiaoyan Yi ◽  
...  
Keyword(s):  
Tungsten Trioxide ◽  
Ultraviolet Detectors ◽  
Deep Ultraviolet ◽  
Gan Heterostructure

Dielectric strength, optical absorption, and deep ultraviolet detectors of hexagonal boron nitride epilayers

2012 ◽  
Vol 101 (17) ◽  
pp. 171112 ◽  
Author(s):  
J. Li ◽  
S. Majety ◽  
R. Dahal ◽  
W. P. Zhao ◽  
J. Y. Lin ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Optical Absorption ◽  
Hexagonal Boron Nitride ◽  
Dielectric Strength ◽  
Ultraviolet Detectors ◽  
Deep Ultraviolet

Sputtering Ambient Effects on Functionality of Al-doped Gallium Oxide Films for Deep-Ultraviolet Detectors

2019 ◽  
Author(s):  
Po-Wei Chen ◽  
Shiau-Yuan Huang ◽  
Chao-Chun Wang ◽  
Po-Wen Hsiao ◽  
Shuo-Huang Yuan ◽  
...  
Keyword(s):  
Gallium Oxide ◽  
Oxide Films ◽  
Ultraviolet Detectors ◽  
Deep Ultraviolet

Comprehensive Investigation of Single Crystal Diamond Deep-Ultraviolet Detectors

2012 ◽  
Vol 51 (9R) ◽  
pp. 090115 ◽  
Author(s):  
Meiyong Liao ◽  
Liwen Sang ◽  
Tokuyuku Teraji ◽  
Masataka Imura ◽  
Jose Alvarez ◽  
...  
Keyword(s):  
Single Crystal ◽  
Comprehensive Investigation ◽  
Ultraviolet Detectors ◽  
Single Crystal Diamond ◽  
Deep Ultraviolet

Novel organic, polymeric materials for electronics applications

2002 ◽  
Vol 722 ◽  
Author(s):  
Ram W. Sabnis ◽  
Mary J. Spencer ◽  
Douglas J. Guerrero
Keyword(s):  
Optical Density ◽  
Chemical Vapor ◽  
Polymeric Materials ◽  
Substantial Improvement ◽  
Polymeric Systems ◽  
Patterned Wafers ◽  
Visible Spectra ◽  
Potential Applications ◽  
Deep Ultraviolet ◽  
Deposited Films

AbstractNovel organic, polymeric materials and processes of depositing thin films on electronics substrates by chemical vapor deposition (CVD) have been developed and the lithographic behavior of photoresist coated over these CVD films at deep ultraviolet (DUV) wavelength has been evaluated. The specific monomers synthesized for DUV applications include [2.2](1,4)- naphthalenophane, [2.2](9,10)-anthracenophane and their derivatives which showed remarkable film uniformity on flat wafers and conformality over structured topography wafers, upon polymerization by CVD. The chemical, physical and optical properties of the deposited films have been characterized by measuring parameters such as thickness uniformity, solubility, conformality, adhesion to semiconductor substrates, ultraviolet-visible spectra, optical density, optical constants, defectivity, and resist compatibility. Scanning electron microscope (SEM) photos of cross-sectioned patterned wafers showed verticle profiles with no footing, standing waves or undercut. Resist profiles down to 0.10 νm dense lines and 0.09 νm isolated lines were achieved in initial tests. CVD coatings generated 96-100% conformal films, which is a substantial improvement over commercial spin-on polymeric systems. The light absorbing layers have high optical density at 248 nm and are therefore capable materials for DUV lithography applications. CVD is a potentially useful technology to extend lithography for sub-0.15 νm devices. These films have potential applications in microelectronics, optoelectronics and photonics.

Intrinsic doping limit and defect-assisted luminescence in Cs4PbBr6

2019 ◽  
Author(s):  
Young-Kwang Jung ◽  
Joaquin Calbo ◽  
Ji-Sang Park ◽  
Lucy D. Wahlley ◽  
Sunghyun Kim ◽  
...  
Keyword(s):  
First Principles ◽  
Room Temperature ◽  
Stokes Shift ◽  
Green Luminescence ◽  
Counter Ions ◽  
Self Consistent ◽  
Deep Ultraviolet ◽  
Halide Perovskite ◽  
Related Compounds ◽  
Level Analysis

Cs<sub>4</sub>PbBr<sub>6 </sub>is a member of the halide perovskite family that is built from isolated (zero-dimensional) PbBr<sub>6</sub><sup>4-</sup> octahedra with Cs<sup>+</sup> counter ions. The material exhibits anomalous optoelectronic properties: optical absorption and weak emission in the deep ultraviolet (310 - 375 nm) with efficient luminescence in the green region (~ 540 nm). Several hypotheses have been proposed to explain the giant Stokes shift including: (i) phase impurities; (ii) self-trapped exciton; (iii) defect emission. We explore, using first-principles theory and self-consistent Fermi level analysis, the unusual defect chemistry and physics of Cs<sub>4</sub>PbBr<sub>6</sub>. We find a heavily compensated system where the room-temperature carrier concentrations (< 10<sup>9</sup> cm<sup>-3</sup>) are more than one million times lower than the defect concentrations. We show that the low-energy Br-on-Cs antisite results in the formation of a polybromide (Br<sub>3</sub>) species that can exist in a range of charge states. We further demonstrate from excited-state calculations that tribromide moieties are photoresponsive and can contribute to the observed green luminescence. Photoactivity of polyhalide molecules is expected to be present in other halide perovskite-related compounds where they can influence light absorption and emission. <br>

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