Dielectric strength, optical absorption, and deep ultraviolet detectors of hexagonal boron nitride epilayers

2012 ◽  
Vol 101 (17) ◽  
pp. 171112 ◽  
Author(s):  
J. Li ◽  
S. Majety ◽  
R. Dahal ◽  
W. P. Zhao ◽  
J. Y. Lin ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Optical Absorption ◽  
Hexagonal Boron Nitride ◽  
Dielectric Strength ◽  
Ultraviolet Detectors ◽  
Deep Ultraviolet

Catalyst-free growth of two-dimensional hexagonal boron nitride few-layers on sapphire for deep ultraviolet photodetectors

2019 ◽  
Vol 7 (47) ◽  
pp. 14999-15006 ◽  
Author(s):  
Menglei Gao ◽  
Junhua Meng ◽  
Yanan Chen ◽  
Siyuan Ye ◽  
Ye Wang ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Two Dimensional ◽  
Wafer Scale ◽  
Sapphire Substrates ◽  
Catalyst Free ◽  
Deep Ultraviolet ◽  
Free Growth ◽  
Ultraviolet Photodetectors

Catalyst-free growth of wafer-scale h-BN few-layers is realized on sapphire substrates by the combination of surface nitridation and N+ sputtering.

The Near Edge Structure of Hexagonal Boron Nitride

2014 ◽  
Vol 20 (4) ◽  
pp. 1053-1059 ◽  
Author(s):  
Nicholas L. McDougall ◽  
Rebecca J. Nicholls ◽  
Jim G. Partridge ◽  
Dougal G. McCulloch
Keyword(s):  
Boron Nitride ◽  
Density Functional ◽  
Light Emission ◽  
Hexagonal Boron Nitride ◽  
Core Loss ◽  
Experimental Studies ◽  
Stacking Faults ◽  
Edge Structure ◽  
Deep Ultraviolet ◽  
Electron Energy Loss

AbstractHexagonal boron nitride (hBN) is a promising material for a range of applications including deep-ultraviolet light emission. Despite extensive experimental studies, some fundamental aspects of hBN remain unknown, such as the type of stacking faults likely to be present and their influence on electronic properties. In this paper, different stacking configurations of hBN are investigated using CASTEP, a pseudopotential density functional theory code. AB-b stacking faults, in which B atoms are positioned directly on top of one another while N atoms are located above the center of BN hexagons, are shown to be likely in conventional AB stacked hBN. Bandstructure calculations predict a single direct bandgap structure that may be responsible for the discrepancies in bandgap type observed experimentally. Calculations of the near edge structure showed that different stackings of hBN are distinguishable using measurements of core-loss edges in X-ray absorption and electron energy loss spectroscopy. AB stacking was found to best reproduce features in the experimental B and N K-edges. The calculations also show that splitting of the 1s to π* peak in the B K-edge, recently observed experimentally, may be accounted for by the presence of AB-b stacking faults.

The optical absorption and photoconductivity spectra of hexagonal boron nitride single crystals

2005 ◽  
Vol 202 (11) ◽  
pp. 2229-2233 ◽  
Author(s):  
Z. Remes ◽  
M. Nesladek ◽  
K. Haenen ◽  
K. Watanabe ◽  
T. Taniguchi
Keyword(s):  
Boron Nitride ◽  
Optical Absorption ◽  
Single Crystals ◽  
Hexagonal Boron Nitride

Optical absorption of hexagonal boron nitride involving nitrogen vacancies and their complexes

2004 ◽  
Vol 46 (3) ◽  
pp. 435-441 ◽  
Author(s):  
S. N. Grinyaev ◽  
F. V. Konusov ◽  
V. V. Lopatin ◽  
L. N. Shiyan
Keyword(s):  
Boron Nitride ◽  
Optical Absorption ◽  
Hexagonal Boron Nitride ◽  
Nitrogen Vacancies
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