Influence of laser damage on the performance of selective emitter solar cell fabricated using laser doping process

2015 ◽  
Vol 132 ◽  
pp. 215-220 ◽  
Author(s):  
Myungsu Kim ◽  
Donghwan Kim ◽  
Dongseop Kim ◽  
Yoonmook Kang
Keyword(s):  
Solar Cell ◽  
Laser Damage ◽  
Laser Doping ◽  
Selective Emitter

Selective emitter solar cell through simultaneous laser doping and grooving of silicon followed by self-aligned metal plating

2017 ◽  
Vol 169 ◽  
pp. 151-158 ◽  
Author(s):  
Sisi Wang ◽  
Ly Mai ◽  
Alison Wenham ◽  
Ziv Hameiri ◽  
David Payne ◽  
...  
Keyword(s):  
Solar Cell ◽  
Laser Doping ◽  
Selective Emitter ◽  
Metal Plating

scholarly journals High Quality Passivation Scheme Combined with Laser Doping from SiN:P and SiN:B Layer for Silicon Solar Cell

2012 ◽  
Vol 27 ◽  
pp. 467-473 ◽  
Author(s):  
S. Gall ◽  
B. Paviet-Salomon ◽  
J. Lerat ◽  
T. Emeraud
Keyword(s):  
Solar Cell ◽  
Silicon Solar Cell ◽  
High Quality ◽  
Laser Doping

scholarly journals Effects of Laser Doping on the Formation of the Selective Emitter of a c-Si Solar Cell

2020 ◽  
Vol 10 (13) ◽  
pp. 4554
Author(s):  
Jeong Eun Park ◽  
Won Seok Choi ◽  
Jae Joon Jang ◽  
Eun Ji Bae ◽  
Donggun Lim
Keyword(s):  
Laser Fluence ◽  
Contact Resistivity ◽  
Process Conditions ◽  
Laser Doping ◽  
Selective Emitter ◽  
Melting Phenomenon ◽  
Irregular Structure ◽  
Si Solar Cell ◽  
Additional Processing ◽  
By Products

Laser doping, though able to improve cell characteristics, enables the formation of a selective emitter without the need for additional processing. Its parameters should be investigated to minimize laser defects, such as the heat-affected zone (HAZ), and to obtain a low contact resistance. Herein, the laser fluence and speed were changed to optimize process conditions. Under a laser fluence of 1.77 J/cm2 or more, the surface deteriorated due to the formation of the HAZ during the formation of the laser doping selective emitter (LDSE). The HAZ prevented the formation of the LDSE and impaired cell characteristics. Therefore, the laser speeds were changed from 10 to 70 mm/s. The lowest contact resistivity of 1.8 mΩ·cm2 was obtained under a laser fluence and speed of 1.29 J/cm2 and 10 mm/s, respectively. However, the surface had an irregular structure due to the melting phenomenon, and many by-products were formed. This may have degraded the efficiency due to the increased contact reflectivity. Thus, we obtained the lowest contact resistivity of 3.42 mΩ·cm2, and the damage was minimized under the laser fluence and speed of 1.29 J/cm2 and 40 mm/s, respectively.

scholarly journals Low-Frequency Noise and Microplasma Analysis for c-Si Solar Cell Characterization

2012 ◽  
Vol 2012 ◽  
pp. 1-5 ◽  
Author(s):  
Jiří Vanek ◽  
Jan Dolensky ◽  
Zdenek Chobola ◽  
Mirek Luňák ◽  
Aleš Poruba
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Conversion Efficiency ◽  
Low Frequency ◽  
Low Noise ◽  
Frequency Noise ◽  
Noise Spectral Density ◽  
Selective Emitter ◽  
Noise Spectroscopy ◽  
Cell Conversion

This paper brings the comparison of solar cell conversion efficiency and results from a noise spectroscopy and microplasma presence to evaluate the solar cell technology. Three sets of monocrystalline silicon solar cells (c-Si) varying in front side phosphorus doped emitters were produced by standard screen-printing technique. From the measurements it follows that the noise spectral density related to defects is of 1/ftype and its magnitude. It has been established that samples showing low noise feature high-conversion efficiency. The best results were reached for a group solar cells with selective emitter structure prepared by double-phosphorus diffusion process.

Doping Profile Effect of Shallow Emitter Junction in Selective Emitter c-Si Solar Cell with Reactive Ion Etching Etch Back Process

2013 ◽  
Vol 10 (8) ◽  
pp. 1779-1783
Author(s):  
Bonggi Kim ◽  
Cheolmin Park ◽  
Nagarajan Balaji ◽  
Yongwoo Lee ◽  
Kyuwan Song ◽  
...  
Keyword(s):  
Solar Cell ◽  
Reactive Ion Etching ◽  
Doping Profile ◽  
Ion Etching ◽  
Selective Emitter ◽  
Si Solar Cell ◽  
Emitter Junction

Ceramic IR Emitter with Spectral Match to GaSb PV Cells for TPV

2013 ◽  
Vol 1493 ◽  
pp. 11-22 ◽  
Author(s):  
Lewis M. fraas ◽  
Kuanrong Qiu
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
High Temperature ◽  
Large Volume ◽  
Selective Emitter ◽  
Spectral Selectivity ◽  
Cell Conversion ◽  
Commercial Market ◽  
History Of ◽  
Spectral Match

ABSTRACTA high temperature ceramic selective emitter for thermophotovoltaic (TPV) electric generators is described with a spectral match to GaSb IR cells. While solar cells generate electricity quietly and are lightweight, traditional solar cells are used with sunlight and only generate electricity during the day. Workers at JX Crystals invented the GaSb IR cell as a booster cell to demonstrate a solar cell conversion efficiency of 35%. JX Crystals now makes these IR cells. In TPV, these cells can potentially be used with flame heated ceramic emitters to generate electricity quietly day and night. One of the most important requirements for TPV is a good spectral match between the ceramic IR emitted and the IR PV cells. The first problem is to find, demonstrate, and integrate a doped ceramic IR emitter with a spectral match to these GaSb cells. Recently, nickel oxide and cobalt oxide doped MgO-based ceramics have been shown experimentally and theoretically to have spectral selectivity but no attempts have been made to integrate these ceramic IR emitters into a fully operational TPV generator. Herein, we review the history of TPV and note that a key to future progress will be the integration of an appropriate ceramic emitter with cells and a burner to demonstrate an operational TPV generator. Integrating TPV into a residential boiler is discussed as a potential future large volume commercial market.

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