Direct writing the selective emitter of solar cell with lateral ultrasonic spray laser doping technique

2015 ◽  
Vol 107 (14) ◽  
pp. 143901
Keyword(s):  
Solar Cell ◽  
Direct Writing ◽  
Laser Doping ◽  
Selective Emitter ◽  
Ultrasonic Spray ◽  
Doping Technique

Selective emitter solar cell through simultaneous laser doping and grooving of silicon followed by self-aligned metal plating

2017 ◽  
Vol 169 ◽  
pp. 151-158 ◽  
Author(s):  
Sisi Wang ◽  
Ly Mai ◽  
Alison Wenham ◽  
Ziv Hameiri ◽  
David Payne ◽  
...  
Keyword(s):  
Solar Cell ◽  
Laser Doping ◽  
Selective Emitter ◽  
Metal Plating

Features of characteristics and stability of CdTe nuclear radiation detectors fabricated by laser doping technique

2008 ◽  
Author(s):  
Volodymyr A. Gnatyuk ◽  
Toru Aoki ◽  
Oleksandr I. Vlasenko ◽  
Sergiy N. Levytskyi ◽  
Yoshinori Hatanaka ◽  
...  
Keyword(s):  
Radiation Detectors ◽  
Nuclear Radiation ◽  
Laser Doping ◽  
Doping Technique ◽  
Nuclear Radiation Detectors

scholarly journals High Quality Passivation Scheme Combined with Laser Doping from SiN:P and SiN:B Layer for Silicon Solar Cell

2012 ◽  
Vol 27 ◽  
pp. 467-473 ◽  
Author(s):  
S. Gall ◽  
B. Paviet-Salomon ◽  
J. Lerat ◽  
T. Emeraud
Keyword(s):  
Solar Cell ◽  
Silicon Solar Cell ◽  
High Quality ◽  
Laser Doping

Stable p-channel polysilicon thin film transistors fabricated by laser doping technique

2005 ◽  
Vol 487 (1-2) ◽  
pp. 232-236 ◽  
Author(s):  
A. Di Gaspare ◽  
L. Mariucci ◽  
A. Pecora ◽  
G. Fortunato
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Laser Doping ◽  
Doping Technique

scholarly journals Effects of Laser Doping on the Formation of the Selective Emitter of a c-Si Solar Cell

2020 ◽  
Vol 10 (13) ◽  
pp. 4554
Author(s):  
Jeong Eun Park ◽  
Won Seok Choi ◽  
Jae Joon Jang ◽  
Eun Ji Bae ◽  
Donggun Lim
Keyword(s):  
Laser Fluence ◽  
Contact Resistivity ◽  
Process Conditions ◽  
Laser Doping ◽  
Selective Emitter ◽  
Melting Phenomenon ◽  
Irregular Structure ◽  
Si Solar Cell ◽  
Additional Processing ◽  
By Products

Laser doping, though able to improve cell characteristics, enables the formation of a selective emitter without the need for additional processing. Its parameters should be investigated to minimize laser defects, such as the heat-affected zone (HAZ), and to obtain a low contact resistance. Herein, the laser fluence and speed were changed to optimize process conditions. Under a laser fluence of 1.77 J/cm2 or more, the surface deteriorated due to the formation of the HAZ during the formation of the laser doping selective emitter (LDSE). The HAZ prevented the formation of the LDSE and impaired cell characteristics. Therefore, the laser speeds were changed from 10 to 70 mm/s. The lowest contact resistivity of 1.8 mΩ·cm2 was obtained under a laser fluence and speed of 1.29 J/cm2 and 10 mm/s, respectively. However, the surface had an irregular structure due to the melting phenomenon, and many by-products were formed. This may have degraded the efficiency due to the increased contact reflectivity. Thus, we obtained the lowest contact resistivity of 3.42 mΩ·cm2, and the damage was minimized under the laser fluence and speed of 1.29 J/cm2 and 40 mm/s, respectively.

Direct Writing Laser Doping from Spun‐On Glasses

1991 ◽  
Vol 138 (10) ◽  
pp. 3039-3042 ◽  
Author(s):  
G. Sanchez ◽  
J. L. Castaño ◽  
J. Garrido ◽  
J. Martinez ◽  
J. Piqueras
Keyword(s):  
Direct Writing ◽  
Laser Doping
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