Metal–insulator transition temperature of boron-doped VO2 thin films grown by reactive pulsed laser deposition

2020 ◽  
Vol 177 ◽  
pp. 32-37 ◽  
Author(s):  
Thameur Hajlaoui ◽  
Nicolas Émond ◽  
Christian Quirouette ◽  
Boris Le Drogoff ◽  
Joëlle Margot ◽  
...  
Keyword(s):  
Thin Films ◽  
Transition Temperature ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Insulator Transition ◽  
Laser Deposition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Boron Doped ◽  
Vo2 Thin Films

In situoptical characterization of metal-insulator transition in LaNiO3and SrTiO3perovskites in pulsed laser deposition chamber

2011 ◽  
Vol 84 (5-6) ◽  
pp. 501-508 ◽  
Author(s):  
Bruno Berini ◽  
Maxime Evain ◽  
Arnaud Fouchet ◽  
Yves Dumont ◽  
Elena Popova ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Insulator Transition ◽  
Laser Deposition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Deposition Chamber

scholarly journals Control of metal-insulator transition temperature in VO2 thin films grown on RuO2/TiO2 templates by strain modification

AIP Advances ◽  
2019 ◽  
Vol 9 (1) ◽  
pp. 015302 ◽  
Author(s):  
H. Kim ◽  
N. A. Charipar ◽  
J. Figueroa ◽  
N. S. Bingham ◽  
A. Piqué
Keyword(s):  
Thin Films ◽  
Transition Temperature ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Vo2 Thin Films

Comprehensive study of the metal-insulator transition in pulsed laser deposited epitaxial VO2 thin films

2013 ◽  
Vol 113 (4) ◽  
pp. 043707 ◽  
Author(s):  
Deyi Fu ◽  
Kai Liu ◽  
Tao Tao ◽  
Kelvin Lo ◽  
Chun Cheng ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Vo2 Thin Films ◽  
Comprehensive Study

The effect of growth oxygen pressure on the metal–insulator transition of ultrathin Sm0.6Nd0.4NiO3−δepitaxial films

RSC Advances ◽  
2014 ◽  
Vol 4 (98) ◽  
pp. 55082-55086 ◽  
Author(s):  
Haoliang Huang ◽  
Zhenlin Luo ◽  
Yuanjun Yang ◽  
Mengmeng Yang ◽  
Haibo Wang ◽  
...  
Keyword(s):  
Single Crystal ◽  
Pulsed Laser Deposition ◽  
Oxygen Pressure ◽  
Strain State ◽  
Pulsed Laser ◽  
Epitaxial Films ◽  
Insulator Transition ◽  
Laser Deposition ◽  
Metal Insulator Transition ◽  
Metal Insulator

Ultrathin Sm0.6Nd0.4NiO3−δepitaxial films were deposited by pulsed laser deposition (PLD) onto LaAlO3(LAO) single crystal substrates. TheTMIof the SNNO films remarkably decreases with the decrease of the growth oxygen pressure, while the strain state varied slightly.

Electrical and optical characterization of the metal-insulator transition temperature in Cr-doped VO2 thin films

2013 ◽  
Vol 113 (17) ◽  
pp. 173704 ◽  
Author(s):  
B. L. Brown ◽  
Mark Lee ◽  
P. G. Clem ◽  
C. D. Nordquist ◽  
T. S. Jordan ◽  
...  
Keyword(s):  
Thin Films ◽  
Transition Temperature ◽  
Optical Characterization ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Vo2 Thin Films
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