Thickness dependent metal-insulator transition and dimensional crossover for weak localization in Si0.02Zn0.98O thin films grown by pulsed laser deposition

2014 ◽  
Vol 115 (19) ◽  
pp. 193705 ◽  
Author(s):  
Amit K. Das ◽  
R. S. Ajimsha ◽  
L. M. Kukreja
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Weak Localization ◽  
Insulator Transition ◽  
Laser Deposition ◽  
Dimensional Crossover ◽  
Metal Insulator Transition ◽  
Metal Insulator

Metal–insulator transition temperature of boron-doped VO2 thin films grown by reactive pulsed laser deposition

2020 ◽  
Vol 177 ◽  
pp. 32-37 ◽  
Author(s):  
Thameur Hajlaoui ◽  
Nicolas Émond ◽  
Christian Quirouette ◽  
Boris Le Drogoff ◽  
Joëlle Margot ◽  
...  
Keyword(s):  
Thin Films ◽  
Transition Temperature ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Insulator Transition ◽  
Laser Deposition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Boron Doped ◽  
Vo2 Thin Films

In situoptical characterization of metal-insulator transition in LaNiO3and SrTiO3perovskites in pulsed laser deposition chamber

2011 ◽  
Vol 84 (5-6) ◽  
pp. 501-508 ◽  
Author(s):  
Bruno Berini ◽  
Maxime Evain ◽  
Arnaud Fouchet ◽  
Yves Dumont ◽  
Elena Popova ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Insulator Transition ◽  
Laser Deposition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Deposition Chamber

The effect of growth oxygen pressure on the metal–insulator transition of ultrathin Sm0.6Nd0.4NiO3−δepitaxial films

RSC Advances ◽  
2014 ◽  
Vol 4 (98) ◽  
pp. 55082-55086 ◽  
Author(s):  
Haoliang Huang ◽  
Zhenlin Luo ◽  
Yuanjun Yang ◽  
Mengmeng Yang ◽  
Haibo Wang ◽  
...  
Keyword(s):  
Single Crystal ◽  
Pulsed Laser Deposition ◽  
Oxygen Pressure ◽  
Strain State ◽  
Pulsed Laser ◽  
Epitaxial Films ◽  
Insulator Transition ◽  
Laser Deposition ◽  
Metal Insulator Transition ◽  
Metal Insulator

Ultrathin Sm0.6Nd0.4NiO3−δepitaxial films were deposited by pulsed laser deposition (PLD) onto LaAlO3(LAO) single crystal substrates. TheTMIof the SNNO films remarkably decreases with the decrease of the growth oxygen pressure, while the strain state varied slightly.

Semiconductor-insulator transition in VO2(B) thin films grown by pulsed laser deposition

2015 ◽  
Vol 118 (12) ◽  
pp. 125308 ◽  
Author(s):  
Armando Rúa ◽  
Ramón D. Díaz ◽  
Sergiy Lysenko ◽  
Félix E. Fernández
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Insulator Transition ◽  
Laser Deposition

Comprehensive study of the metal-insulator transition in pulsed laser deposited epitaxial VO2 thin films

2013 ◽  
Vol 113 (4) ◽  
pp. 043707 ◽  
Author(s):  
Deyi Fu ◽  
Kai Liu ◽  
Tao Tao ◽  
Kelvin Lo ◽  
Chun Cheng ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Vo2 Thin Films ◽  
Comprehensive Study

scholarly journals The dimensional crossover of quantum transport properties in few-layered Bi2Se3 thin films

2019 ◽  
Vol 1 (6) ◽  
pp. 2303-2310 ◽  
Author(s):  
Liang Yang ◽  
Zhenhua Wang ◽  
Mingze Li ◽  
Xuan P. A. Gao ◽  
Zhidong Zhang
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Transport Properties ◽  
Quantum Transport ◽  
Topological Insulator ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Dimensional Crossover ◽  
Bismuth Selenide

Topological insulator bismuth selenide (Bi2Se3) thin films with a thickness of 6.0 quintuple layers (QL) to 23 QL are deposited using pulsed laser deposition (PLD).

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