Electrical and optical characterization of the metal-insulator transition temperature in Cr-doped VO2 thin films

2013 ◽  
Vol 113 (17) ◽  
pp. 173704 ◽  
Author(s):  
B. L. Brown ◽  
Mark Lee ◽  
P. G. Clem ◽  
C. D. Nordquist ◽  
T. S. Jordan ◽  
...  
Keyword(s):  
Thin Films ◽  
Transition Temperature ◽  
Optical Characterization ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Vo2 Thin Films

Metal–insulator transition temperature of boron-doped VO2 thin films grown by reactive pulsed laser deposition

2020 ◽  
Vol 177 ◽  
pp. 32-37 ◽  
Author(s):  
Thameur Hajlaoui ◽  
Nicolas Émond ◽  
Christian Quirouette ◽  
Boris Le Drogoff ◽  
Joëlle Margot ◽  
...  
Keyword(s):  
Thin Films ◽  
Transition Temperature ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Insulator Transition ◽  
Laser Deposition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Boron Doped ◽  
Vo2 Thin Films

scholarly journals Control of metal-insulator transition temperature in VO2 thin films grown on RuO2/TiO2 templates by strain modification

AIP Advances ◽  
2019 ◽  
Vol 9 (1) ◽  
pp. 015302 ◽  
Author(s):  
H. Kim ◽  
N. A. Charipar ◽  
J. Figueroa ◽  
N. S. Bingham ◽  
A. Piqué
Keyword(s):  
Thin Films ◽  
Transition Temperature ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Vo2 Thin Films

Influence of Fe3O4 on metal–insulator transition temperature of La0.7Ca0.3MnO3 thin films

2019 ◽  
Vol 55 (1) ◽  
pp. 99-106
Author(s):  
Xiaofen Guan ◽  
Rongrong Ma ◽  
Guowei Zhou ◽  
Zhiyong Quan ◽  
G. A. Gehring ◽  
...  
Keyword(s):  
Thin Films ◽  
Transition Temperature ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator

TRANSPORT PROPERTIES OF Ag-DOPED La0.7Ca0.3MnO3 THIN FILMS ON SILICON SUBSTRATE

2010 ◽  
Vol 24 (27) ◽  
pp. 5451-5456 ◽  
Author(s):  
H. C. JIANG ◽  
W. L. ZHANG ◽  
X. F. CAO ◽  
W. X. ZHANG ◽  
B. PENG
Keyword(s):  
Thin Films ◽  
Transition Temperature ◽  
Transport Properties ◽  
Silicon Substrate ◽  
Annealing Temperature ◽  
Rf Magnetron Sputtering ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Higher Temperature

Ag -doped La 0.7 Ca 0.3 MnO 3 (LCMO) films were prepared on silicon substrate by RF magnetron sputtering. The dependences of transport properties on annealing temperature were explored. It is shown that the resistivity of the samples decreases and the metal–insulator transition temperature shifts to higher temperature with the increase in annealing temperature. Two metal–insulator transition temperatures are presented in the R – T plots of Ag -doped LCMO films, which can be explained by the Ag 1+ substitution of La 3+ to form La 1-x Ag x MnO 3 compound. Compared with LCMO thin films, Ag -doping can observably improve the TM-I and decrease the resistivity of the samples.

Microwave switching functions using reversible metal-insulator transition (MIT) in VO2 thin films

2007 ◽  
Author(s):  
Aurelian Crunteanu ◽  
Frederic Dumas-Bouchiat ◽  
Corinne Champeaux ◽  
Alain Catherinot ◽  
Arnaud Pothier ◽  
...  
Keyword(s):  
Thin Films ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Switching Functions ◽  
Vo2 Thin Films
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