The effect of oxygen flow rate on metal–insulator transition (MIT) characteristics of vanadium dioxide (VO2) thin films by pulsed laser deposition (PLD)

2020 ◽  
Vol 529 ◽  
pp. 146995 ◽  
Author(s):  
Syed A. Bukhari ◽  
Sooraj Kumar ◽  
Pawan Kumar ◽  
Sarang P. Gumfekar ◽  
Hyun-Joong Chung ◽  
...  
Keyword(s):  
Thin Films ◽  
Flow Rate ◽  
Vanadium Dioxide ◽  
Pulsed Laser ◽  
Oxygen Flow Rate ◽  
Laser Deposition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Effect Of Oxygen ◽  
Vo2 Thin Films

Metal–insulator transition temperature of boron-doped VO2 thin films grown by reactive pulsed laser deposition

2020 ◽  
Vol 177 ◽  
pp. 32-37 ◽  
Author(s):  
Thameur Hajlaoui ◽  
Nicolas Émond ◽  
Christian Quirouette ◽  
Boris Le Drogoff ◽  
Joëlle Margot ◽  
...  
Keyword(s):  
Thin Films ◽  
Transition Temperature ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Insulator Transition ◽  
Laser Deposition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Boron Doped ◽  
Vo2 Thin Films

Highly Transparent and Low Resistivity Al-Doped ZnO Thin Films Grown by Pulsed Laser Deposition under Different Oxygen Flow Rates

2013 ◽  
Vol 662 ◽  
pp. 453-458
Author(s):  
Kyoo Ho Kim ◽  
Eun Soo Lee ◽  
Seong Heon Lee
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Pulsed Laser Deposition ◽  
Flow Rate ◽  
Pulsed Laser ◽  
Oxygen Flow Rate ◽  
Laser Deposition ◽  
Oxygen Flow ◽  
Low Resistivity ◽  
Doped Zno

Polycrystalline Al-doped ZnO (AZO) thin films with a thickness of 1300 Å were grown on Corning 1737 glass by pulsed laser deposition (PLD) at a low substrate temperature. The presence of oxygen gas during deposition led to a remarkable enhancement of the (002) c-axis preferential orientation as well as increased crystallite size. Highly transparent films with a transmittance of 85% could be obtained by controlling the oxygen flow rate, while causing a Burstein-Moss shift toward a shorter wavelength as well. The resistivities of the films were found to be functions of both the oxygen flow rate and substrate temperature, with the lowest value being 2.3 x 10-4 Ωcm (18Ω/sq sheet resistance). It was found that both the oxygen flow rate and substrate temperature are crucial in order to grow superior device quality films with an appropriate degree of crystallinity, less surface roughness, high transmittance and low resistivity, which are characteristics of great technological importance.

Comprehensive study of the metal-insulator transition in pulsed laser deposited epitaxial VO2 thin films

2013 ◽  
Vol 113 (4) ◽  
pp. 043707 ◽  
Author(s):  
Deyi Fu ◽  
Kai Liu ◽  
Tao Tao ◽  
Kelvin Lo ◽  
Chun Cheng ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Vo2 Thin Films ◽  
Comprehensive Study

Influence of C-implanted ions on the transition properties of VO2 thin films

MRS Advances ◽  
2020 ◽  
Vol 5 (40-41) ◽  
pp. 2139-2146
Author(s):  
B. M. Mabakachaba ◽  
I. G. Madiba ◽  
B.S. Khanyile ◽  
C.J. Arendse ◽  
J. Kennedy ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Vanadium Dioxide ◽  
Elevated Temperatures ◽  
Ion Beam ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
The Novel ◽  
Vo2 Thin Films ◽  
Vanadium Dioxide Thin Films

AbstractThe study report on Vanadium dioxide thin films of about 100nm thickness deposited using pulsed laser deposition on Si (100). The novel phase change reported is attributed to the post-treatment of the films via ion implantation with 25 KeV C+ ion beam at varying particle fluence (1E15, 1E16, and 1E17 /cm2). At the initial fluence, the preferred phase is retained while amorphization and recrystallization of the film is observed as the fluence increase to 1E16 ions/cm2and 1E17 ions/cm2, respectively. The phase transition of the samples is observed to occur at a temperature below 320 K while stabilization of the low phase structure is observed for the middle fluence. Further increase restores the SMT behaviour/trend that occurred at elevated temperatures.

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