scholarly journals Coaxial n-ZnO/p-Si Nanowire Heterostructures for Energy and Sensing Applications

2012 ◽  
Vol 47 ◽  
pp. 1279-1280 ◽  
Author(s):  
A.E. Gad ◽  
M. Hoffmann ◽  
F. Hernandez-Ramirez ◽  
J.D. Prades ◽  
H. Shen ◽  
...  
Keyword(s):  
Si Nanowire ◽  
Sensing Applications ◽  
Nanowire Heterostructures

Coaxial p-Si/n-ZnO nanowire heterostructures for energy and sensing applications

2012 ◽  
Vol 135 (2-3) ◽  
pp. 618-622 ◽  
Author(s):  
A.E. Gad ◽  
M.W.G. Hoffmann ◽  
F. Hernandez-Ramirez ◽  
J.D. Prades ◽  
H. Shen ◽  
...  
Keyword(s):  
Zno Nanowire ◽  
Sensing Applications ◽  
Nanowire Heterostructures

Ge/Si nanowire heterostructures as high-performance field-effect transistors

Nature ◽  
2006 ◽  
Vol 441 (7092) ◽  
pp. 489-493 ◽  
Author(s):  
Jie Xiang ◽  
Wei Lu ◽  
Yongjie Hu ◽  
Yue Wu ◽  
Hao Yan ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Si Nanowire ◽  
Nanowire Heterostructures

Growth of Ge–Si nanowire heterostructures via chemical vapor deposition

2011 ◽  
Vol 519 (13) ◽  
pp. 4174-4176 ◽  
Author(s):  
C.B. Li ◽  
K. Usami ◽  
H. Mizuta ◽  
S. Oda
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Si Nanowire ◽  
Nanowire Heterostructures

scholarly journals Diffusion in SixGe1-x/ Si Nanowire Heterostructures

2006 ◽  
Vol 12 (S02) ◽  
pp. 520-521
Author(s):  
X Zhang ◽  
J Kulik ◽  
E Dickey
Keyword(s):  
Si Nanowire ◽  
Nanowire Heterostructures

Extended abstract of a paper presented at Microscopy and Microanalysis 2006 in Chicago, Illinois, USA, July 30 – August 3, 2006

Computer simulation study about the dependence of amorphous silicon photonic waveguides efficiency on the material quality

2020 ◽  
Vol 90 (3) ◽  
pp. 30502
Author(s):  
Alessandro Fantoni ◽  
João Costa ◽  
Paulo Lourenço ◽  
Manuela Vieira
Keyword(s):  
Amorphous Silicon ◽  
High Throughput Screening ◽  
Simulation Analysis ◽  
Low Cost ◽  
Deposition Process ◽  
Large Area ◽  
Sidewall Roughness ◽  
Sensing Applications ◽  
Fabrication Defects ◽  
The Impact

Amorphous silicon PECVD photonic integrated devices are promising candidates for low cost sensing applications. This manuscript reports a simulation analysis about the impact on the overall efficiency caused by the lithography imperfections in the deposition process. The tolerance to the fabrication defects of a photonic sensor based on surface plasmonic resonance is analysed. The simulations are performed with FDTD and BPM algorithms. The device is a plasmonic interferometer composed by an a-Si:H waveguide covered by a thin gold layer. The sensing analysis is performed by equally splitting the input light into two arms, allowing the sensor to be calibrated by its reference arm. Two different 1 × 2 power splitter configurations are presented: a directional coupler and a multimode interference splitter. The waveguide sidewall roughness is considered as the major negative effect caused by deposition imperfections. The simulation results show that plasmonic effects can be excited in the interferometric waveguide structure, allowing a sensing device with enough sensitivity to support the functioning of a bio sensor for high throughput screening. In addition, the good tolerance to the waveguide wall roughness, points out the PECVD deposition technique as reliable method for the overall sensor system to be produced in a low-cost system. The large area deposition of photonics structures, allowed by the PECVD method, can be explored to design a multiplexed system for analysis of multiple biomarkers to further increase the tolerance to fabrication defects.

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