Ge/Si nanowire heterostructures as high-performance field-effect transistors

Nature ◽  
2006 ◽  
Vol 441 (7092) ◽  
pp. 489-493 ◽  
Author(s):  
Jie Xiang ◽  
Wei Lu ◽  
Yongjie Hu ◽  
Yue Wu ◽  
Hao Yan ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Si Nanowire ◽  
Nanowire Heterostructures

scholarly journals Formation and Device Application of Ge Nanowire Heterostructures via Rapid Thermal Annealing

2011 ◽  
Vol 2011 ◽  
pp. 1-16 ◽  
Author(s):  
Jianshi Tang ◽  
Chiu-Yen Wang ◽  
Faxian Xiu ◽  
Yi Zhou ◽  
Lih-Juann Chen ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Field Effect ◽  
High Performance ◽  
Lattice Mismatch ◽  
Field Effect Transistors ◽  
Single Crystalline ◽  
Nanowire Transistors ◽  
Nanowire Heterostructures

We reviewed the formation of Ge nanowire heterostructure and its field-effect characteristics by a controlled reaction between a single-crystalline Ge nanowire and Ni contact pads using a facile rapid thermal annealing process. Scanning electron microscopy and transmission electron microscopy demonstrated a wide temperature range of 400~500°C to convert the Ge nanowire to a single-crystalline Ni2Ge/Ge/Ni2Ge nanowire heterostructure with atomically sharp interfaces. More importantly, we studied the effect of oxide confinement during the formation of nickel germanides in a Ge nanowire. In contrast to the formation of Ni2Ge/Ge/Ni2Ge nanowire heterostructures, a segment of high-quality epitaxial NiGe was formed between Ni2Ge with the confinement of Al2O3during annealing. A twisted epitaxial growth mode was observed in both two Ge nanowire heterostructures to accommodate the large lattice mismatch in the NixGe/Ge interface. Moreover, we have demonstrated field-effect transistors using the nickel germanide regions as source/drain contacts to the Ge nanowire channel. Our Ge nanowire transistors have shown a high-performancep-type behavior with a high on/off ratio of 105and a field-effect hole mobility of 210 cm2/Vs, which showed a significant improvement compared with that from unreacted Ge nanowire transistors.

High performance Si nanowire field-effect-transistors based on a CMOS inverter with tunable threshold voltage

Nanoscale ◽  
2014 ◽  
Vol 6 (10) ◽  
pp. 5479 ◽  
Author(s):  
Ngoc Huynh Van ◽  
Jae-Hyun Lee ◽  
Jung Inn Sohn ◽  
Seung Nam Cha ◽  
Dongmok Whang ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Cmos Inverter ◽  
Si Nanowire

scholarly journals Polarization-sensitive photodetectors based on three-dimensional molybdenum disulfide (MoS2) field-effect transistors

Nanophotonics ◽  
2020 ◽  
Vol 9 (16) ◽  
pp. 4719-4728
Author(s):  
Tao Deng ◽  
Shasha Li ◽  
Yuning Li ◽  
Yang Zhang ◽  
Jingye Sun ◽  
...  
Keyword(s):  
Molybdenum Disulfide ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Three Dimensional ◽  
Polarized Light ◽  
Optical Field ◽  
Two Dimensional ◽  
Polarization Ratio ◽  
Two Dimensional Materials

AbstractThe molybdenum disulfide (MoS2)-based photodetectors are facing two challenges: the insensitivity to polarized light and the low photoresponsivity. Herein, three-dimensional (3D) field-effect transistors (FETs) based on monolayer MoS2 were fabricated by applying a self–rolled-up technique. The unique microtubular structure makes 3D MoS2 FETs become polarization sensitive. Moreover, the microtubular structure not only offers a natural resonant microcavity to enhance the optical field inside but also increases the light-MoS2 interaction area, resulting in a higher photoresponsivity. Photoresponsivities as high as 23.8 and 2.9 A/W at 395 and 660 nm, respectively, and a comparable polarization ratio of 1.64 were obtained. The fabrication technique of the 3D MoS2 FET could be transferred to other two-dimensional materials, which is very promising for high-performance polarization-sensitive optical and optoelectronic applications.

scholarly journals Nanonet: Low-temperature-processed tellurium nanowire network for scalable p-type field-effect transistors and a highly sensitive phototransistor array

2021 ◽  
Vol 13 (1) ◽  
Author(s):  
Muhammad Naqi ◽  
Kyung Hwan Choi ◽  
Hocheon Yoo ◽  
Sudong Chae ◽  
Bum Jun Kim ◽  
...  
Keyword(s):  
Low Temperature ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Optical Measurements ◽  
Electrical Performance ◽  
Large Area ◽  
Nanowire Network ◽  
P Type ◽  
Nanowire Networks

AbstractLow-temperature-processed semiconductors are an emerging need for next-generation scalable electronics, and these semiconductors need to feature large-area fabrication, solution processability, high electrical performance, and wide spectral optical absorption properties. Although various strategies of low-temperature-processed n-type semiconductors have been achieved, the development of high-performance p-type semiconductors at low temperature is still limited. Here, we report a unique low-temperature-processed method to synthesize tellurium nanowire networks (Te-nanonets) over a scalable area for the fabrication of high-performance large-area p-type field-effect transistors (FETs) with uniform and stable electrical and optical properties. Maximum mobility of 4.7 cm2/Vs, an on/off current ratio of 1 × 104, and a maximum transconductance of 2.18 µS are achieved. To further demonstrate the applicability of the proposed semiconductor, the electrical performance of a Te-nanonet-based transistor array of 42 devices is also measured, revealing stable and uniform results. Finally, to broaden the applicability of p-type Te-nanonet-based FETs, optical measurements are demonstrated over a wide spectral range, revealing an exceptionally uniform optical performance.

scholarly journals Field-Effect Transistors: Highly π-Extended Copolymers with Diketopyrrolopyrrole Moieties for High-Performance Field-Effect Transistors (Adv. Mater. 34/2012)

2012 ◽  
Vol 24 (34) ◽  
pp. 4589-4589 ◽  
Author(s):  
Huajie Chen ◽  
Yunlong Guo ◽  
Gui Yu ◽  
Yan Zhao ◽  
Ji Zhang ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors

Plastic Electronics: The Influence of Morphology on High-Performance Polymer Field-Effect Transistors (Adv. Mater. 2/2009)

2009 ◽  
Vol 21 (2) ◽  
pp. NA-NA ◽  
Author(s):  
Hoi Nok Tsao ◽  
Don Cho ◽  
Jens Wenzel Andreasen ◽  
Ali Rouhanipour ◽  
Dag W. Breiby ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Plastic Electronics ◽  
High Performance Polymer
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