Growth of Ge–Si nanowire heterostructures via chemical vapor deposition

2011 ◽  
Vol 519 (13) ◽  
pp. 4174-4176 ◽  
Author(s):  
C.B. Li ◽  
K. Usami ◽  
H. Mizuta ◽  
S. Oda
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Si Nanowire ◽  
Nanowire Heterostructures

SiC Nanowires by Silicon Carburization

2006 ◽  
Vol 963 ◽  
Author(s):  
Loucas Tsakalakos ◽  
Jody Fronheiser ◽  
Larry Rowland ◽  
Mohamed Rahmane ◽  
Michael Larsen ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Si Nanowires ◽  
Si Nanowire ◽  
Hydrogen Environment ◽  
Grain Sizes ◽  
Sic Nanowires ◽  
Nanowire Surface

ABSTRACTPolycrystalline SiC nanowires and composite Si nanowire-SiC nanograin structures have been synthesized using a combined catalytic chemical vapor deposition and carburization method. Si nanowires are grown at low temperature (550-650 C) and subsequently carburized at 1100-1200 C in a methane/hydrogen or propane/hydrogen environment. Thermochemical calculations showed that the Si carburization is thermodynamically favorable over a wide tempareture range, whereas our studies showed that the Si nanowire carburization is kinetically limited below ∼1100 °C. Partially carburized nanowires contained distinct SiC nanosized grains on the Si nanowire surface, whereas fully carburized nanowires were polycrystalline 3C SiC with grain sizes of ∼ 50-100 nm.

Boron distribution in the core of Si nanowire grown by chemical vapor deposition

2012 ◽  
Vol 111 (9) ◽  
pp. 094909 ◽  
Author(s):  
Wanghua Chen ◽  
Vladimir G. Dubrovskii ◽  
Xiaolong Liu ◽  
Tao Xu ◽  
Rodrigue Lardé ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Si Nanowire ◽  
The Core ◽  
Boron Distribution

In situ study of electron beam-induced chemical vapor deposition of Au in an environmental TEM

1995 ◽  
Vol 53 ◽  
pp. 256-257
Author(s):  
J. Drucker ◽  
R. Sharma ◽  
J. Kouvetakis ◽  
K.H.J. Weiss
Keyword(s):  
Electron Beam ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Quantum Effect ◽  
Line Drawing ◽  
Chemical Vapor ◽  
Environmental Cell ◽  
Engineering Changes ◽  
Kinetics Of

Patterning of metals is a key element in the fabrication of integrated microelectronics. For circuit repair and engineering changes constructive lithography, writing techniques, based on electron, ion or photon beam-induced decomposition of precursor molecule and its deposition on top of a structure have gained wide acceptance Recently, scanning probe techniques have been used for line drawing and wire growth of W on a silicon substrate for quantum effect devices. The kinetics of electron beam induced W deposition from WF6 gas has been studied by adsorbing the gas on SiO2 surface and measuring the growth in a TEM for various exposure times. Our environmental cell allows us to control not only electron exposure time but also the gas pressure flow and the temperature. We have studied the growth kinetics of Au Chemical vapor deposition (CVD), in situ, at different temperatures with/without the electron beam on highly clean Si surfaces in an environmental cell fitted inside a TEM column.

The relaxation of compressive biaxial strains in SOS via microtwins

1989 ◽  
Vol 47 ◽  
pp. 608-609
Author(s):  
M. E. Twigg ◽  
E. D. Richmond ◽  
J. G. Pellegrino
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Molecular Beam Epitaxy ◽  
Compressive Stress ◽  
Vapor Deposition ◽  
Partial Dislocation ◽  
Molecular Beam ◽  
Volume Fraction ◽  
Chemical Vapor ◽  
Silicon Thin Film

For heteroepitaxial systems, such as silicon on sapphire (SOS), microtwins occur in significant numbers and are thought to contribute to strain relief in the silicon thin film. The size of this contribution can be assessed from TEM measurements, of the differential volume fraction of microtwins, dV/dν (the derivative of the microtwin volume V with respect to the film volume ν), for SOS grown by both chemical vapor deposition (CVD) and molecular beam epitaxy (MBE).In a (001) silicon thin film subjected to compressive stress along the [100] axis , this stress can be relieved by four twinning systems: a/6[211]/( lll), a/6(21l]/(l1l), a/6[21l] /( l1l), and a/6(2ll)/(1ll).3 For the a/6[211]/(1ll) system, the glide of a single a/6[2ll] twinning partial dislocation draws the two halves of the crystal, separated by the microtwin, closer together by a/3.

Coating of continuous carbon fibers with double layers by chemical vapor deposition

2001 ◽  
Vol 11 (PR3) ◽  
pp. Pr3-885-Pr3-892 ◽  
Author(s):  
N. Popovska ◽  
S. Schmidt ◽  
E. Edelmann ◽  
V. K. Wunder ◽  
H. Gerhard ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Carbon Fibers ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Double Layers
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