scholarly journals RESET Current Reduction for Phase Change Memory Based on Standard 0.13-μm CMOS Technology

2011 ◽  
Vol 16 ◽  
pp. 401-406
Author(s):  
CHEN Yifeng ◽  
SONG Zhitang ◽  
CHEN Xiaogang ◽  
LIU Bo ◽  
FENG Gaoming ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Cmos Technology ◽  
Current Reduction ◽  
Change Memory

Carbon-Based Liner for RESET Current Reduction in Self-Heating Phase- Change Memory Cells

2020 ◽  
Vol 67 (10) ◽  
pp. 4228-4233
Author(s):  
Anabel De Proft ◽  
Daniele Garbin ◽  
Gabriele Luca Donadio ◽  
Hubert Hody ◽  
Thomas Witters ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Memory Cells ◽  
Self Heating ◽  
Heating Phase ◽  
Current Reduction ◽  
Change Memory ◽  
Carbon Based

scholarly journals A Phase Change Memory Chip Based on TiSbTe Alloy in 40-nm Standard CMOS Technology

2015 ◽  
Vol 7 (2) ◽  
pp. 172-176 ◽  
Author(s):  
Zhitang Song ◽  
YiPeng Zhan ◽  
Daolin Cai ◽  
Bo Liu ◽  
Yifeng Chen ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Cmos Technology ◽  
Memory Chip ◽  
Change Memory

A 4 Mb LV MOS-Selected Embedded Phase Change Memory in 90 nm Standard CMOS Technology

2011 ◽  
Vol 46 (1) ◽  
pp. 52-63 ◽  
Author(s):  
Guido De Sandre ◽  
Luca Bettini ◽  
Alessandro Pirola ◽  
Lionel Marmonier ◽  
Marco Pasotti ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Cmos Technology ◽  
Change Memory

Programming Current Reduction in GeS2+Sb2Te3 Based Phase-Change Memory

2017 ◽  
Author(s):  
J. Kluge ◽  
A. Verdy ◽  
G. Navarro ◽  
S. Blonkowski ◽  
V. Sousa ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Current Reduction ◽  
Change Memory

scholarly journals Robust Simulations of Nanoscale Phase Change Memory: Dynamics and Retention

Nanomaterials ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 2945
Author(s):  
Feilong Ding ◽  
Deqi Dong ◽  
Yihan Chen ◽  
Xinnan Lin ◽  
Lining Zhang
Keyword(s):  
Phase Change ◽  
Reaction Rate ◽  
Phase Change Memory ◽  
Simulation Method ◽  
Cmos Technology ◽  
Rate Theory ◽  
Simulation Framework ◽  
Reaction Rate Theory ◽  
Dynamic Nucleation ◽  
Change Memory

A robust simulation framework was developed for nanoscale phase change memory (PCM) cells. Starting from the reaction rate theory, the dynamic nucleation was simulated to capture the evolution of the cluster population. To accommodate the non-uniform critical sizes of nuclei due to the non-isothermal conditions during PCM cell programming, an improved crystallization model was proposed that goes beyond the classical nucleation and growth model. With the above, the incubation period in which the cluster distributions reached their equilibrium was captured beyond the capability of simulations with a steady-state nucleation rate. The implications of the developed simulation method are discussed regarding PCM fast SET programming and retention. This work provides the possibility for further improvement of PCM and integration with CMOS technology.

The geometric effect and programming current reduction in cylindrical-shaped phase change memory

2009 ◽  
Vol 20 (28) ◽  
pp. 285701 ◽  
Author(s):  
Yiming Li ◽  
Chih-Hong Hwang ◽  
Tien-Yeh Li ◽  
Hui-Wen Cheng
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Geometric Effect ◽  
Current Reduction ◽  
Change Memory

TiWOx interfacial layer for current reduction and cyclability enhancement of phase change memory

2012 ◽  
Vol 101 (7) ◽  
pp. 073502 ◽  
Author(s):  
Minghua Li ◽  
Rong Zhao ◽  
Leong Tat Law ◽  
Kian Guan Lim ◽  
Luping Shi
Keyword(s):  
Phase Change ◽  
Interfacial Layer ◽  
Phase Change Memory ◽  
Current Reduction ◽  
Change Memory
Sign in / Sign up

Export Citation Format

Share Document