Photocurrent response in a double barrier structure with quantum dots–quantum well inserted in central well

2006 ◽  
Vol 33 (2) ◽  
pp. 355-358 ◽  
Author(s):  
Bing Hu ◽  
Xia Zhou ◽  
Yan Tang ◽  
Huadong Gan ◽  
Hui Zhu ◽  
...  
1993 ◽  
Vol 07 (06) ◽  
pp. 379-388 ◽  
Author(s):  
HANYU SHENG ◽  
SOO-JIN CHUA ◽  
JUHA SINKKONEN

This paper gives a potentially useful application to quantum well of the theory of scattering in the Born approximation. The simple formulae for multiple scattering in a quantum well of double barrier structure are derived. The multiple scattering parameter is the complex mean free path. We show that the amplitude of the coherent wave will be exponentially attenuated and the phase of the wave will be delayed because of the scattering.


1991 ◽  
Vol 70 (2) ◽  
pp. 935-940 ◽  
Author(s):  
H. C. Liu ◽  
G. C. Aers ◽  
M. Buchanan ◽  
Z. R. Wasilewski ◽  
D. Landheer

1989 ◽  
Vol 149 ◽  
Author(s):  
Yeu-Long Jiang ◽  
Huey-Liang Hwang

ABSTRACTa-Si:H/a-Si1−x Cx:H double-barrier structure imbedded in the i layer were fabricated by glow discharge. By using the built-in field in the i layer and the external applied bias, the effects of photo-excited carriers driven by electric field in the i layer tunneling through the double-barrier quantum well were examined. Distinct current bumps are distinctly observed when the quantum well structure is imbedded in the middle section of the i layer. A simple theoretical analysis was developed to study the quantum transport behavior.


2016 ◽  
Vol 14 (2) ◽  
pp. 022501-22505
Author(s):  
Yu Dong Yu Dong ◽  
Guanglong Wang Guanglong Wang ◽  
Haiqiao Ni Haiqiao Ni ◽  
Kangming Pei Kangming Pei ◽  
Zhongtao Qiao Zhongtao Qiao ◽  
...  

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