Superconducting fluctuations in molybdenum nitride thin films

2018 ◽  
Vol 545 ◽  
pp. 5-9 ◽  
Author(s):  
R. Baskaran ◽  
A.V. Thanikai Arasu ◽  
E.P. Amaladass ◽  
L.S. Vaidhyanathan ◽  
D.K. Baisnab
Keyword(s):  
Thin Films ◽  
Molybdenum Nitride ◽  
Superconducting Fluctuations

Microstresses in Molybdenum Nitride Thin Films Deposited by Reactive DC Magnetron Sputtering

2005 ◽  
Vol 490-491 ◽  
pp. 589-594 ◽  
Author(s):  
Yao Gen Shen
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Film Growth ◽  
Nitrogen Addition ◽  
Molybdenum Nitride ◽  
Dc Magnetron Sputtering ◽  
Cross Sectional ◽  
Dense Microstructure ◽  
Transmission Electron ◽  
Complete Relaxation

Thin films of molybdenum nitride (MoNx with 0≤x≤0.35) were deposited on Si(100) at room temperature using reactive DC magnetron sputtering. The residual stress of films was measured as a function of sputtering pressure, nitrogen incorporation, and annealing temperature by wafer curvature-based technique. It was found that the stress of the films was strongly related to their microstructure, which depended mainly on the incorporation of nitrogen in the films. The film stresses without nitrogen addition strongly depended on the argon pressure and changed from highly compressive to highly tensile in a relatively narrow pressure range of 0.8-1.6 Pa. For pressures exceeding ~5.3 Pa, the stress in the film was nearly zero. Cross-sectional transmission electron microscopy indicated that the compressively stressed films contained a dense microstructure without any columns, while the films having tensile stress had a very columnar microstructure. High sputtering-gas pressure conditions yielded dendritic-like film growth, resulting in complete relaxation of the residual tensile stresses. It was also found that the asdeposited film was poorly ordered in structure. When the film was heated at ~775 K, crystallization occurred and the stress of the film drastically changed from –0.75 to 1.65 GPa. The stress development mechanism may be due to volumetric shrinkage of the film during crystallization.

scholarly journals Nernst effect as a probe of superconducting fluctuations in disordered thin films

2009 ◽  
Vol 11 (5) ◽  
pp. 055071 ◽  
Author(s):  
A Pourret ◽  
P Spathis ◽  
H Aubin ◽  
K Behnia
Keyword(s):  
Thin Films ◽  
Nernst Effect ◽  
Superconducting Fluctuations

Composition and Phase Control for Molybdenum Nitride thin Films

1994 ◽  
Vol 354 ◽  
Author(s):  
Mandar S. Mudholkar ◽  
Levi T. Thompson
Keyword(s):  
Thin Films ◽  
Energy Density ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Arrival Rate ◽  
Molybdenum Nitride ◽  
Effective Energy ◽  
Film Composition ◽  
Ion Beam Assisted Deposition ◽  
Molybdenum Nitrides

AbstractMolybdenum nitrides are active and selective hydrodenitrogenation (HDN) catalysts. The catalytic properties of molybdenum nitrides were found to be dependent on the structural properties. The purpose of research described in this paper was to synthesize molybdenum nitride thin films with well defined structures and stoichiometries using ion beam assisted deposition. The films were deposited by evaporating Mo metal, and simultaneously bombarding the growing film with low energy nitrogen ions. The phase constituents of the films were determined using x-ray diffraction and the film composition was obtained by Rutherford backscattering spectrometry.The film composition and phase constituents were strong functions of the ion-to-atom arrival rate ratio, ion energy and ion angle of incidence. Differences in the film composition for different arrival rate ratios and ion angles of incidence were interpreted based on reflection and sputtering effects. Our results suggest that phase formation was governed by the effective energy density per deposited atom. Evaluation of the effective energy density per deposited atom and its physical significance in ion beam assisted deposition is discussed.

scholarly journals Temperature-programmed desorption of H2 from molybdenum nitride thin films

1994 ◽  
Vol 78 (3) ◽  
pp. 299-307 ◽  
Author(s):  
Jeong-Gil Choi ◽  
Hyuek Joon Lee ◽  
Levi T. Thompson
Keyword(s):  
Thin Films ◽  
Temperature Programmed Desorption ◽  
Molybdenum Nitride ◽  
Temperature Programmed

Structural, Morphological and Mechanical Characterisation of Molybdenum Nitride Thin Films Deposited by a Plasma Focus Device

2017 ◽  
Vol 41 (12) ◽  
pp. 699-704
Author(s):  
Mohammad Taghi Hosseinnejad ◽  
Mehdi Ettehadi-Abari ◽  
Naser Panahi
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Plasma Focus ◽  
Photoelectron Spectroscopy ◽  
Plasma Focus Device ◽  
Morphological Properties ◽  
Degree Of Crystallinity ◽  
Root Mean Square Roughness ◽  
Molybdenum Nitride ◽  
X Ray

This research focuses on the characterisation of nanostructured molybdenum nitride (MoN) thin films deposited on glass substrates at room temperature using a low-energy (1.1 kJ) plasma focus device. The nanostructure, surface morphology, electrical resistivity and mechanical properties of MoN thin films were studied in terms of the number of shots required to prepare them. X-ray diffraction (XRD) analysis indicated that all of the deposited layers were polycrystalline in nature, possessing the γ-Mo2N (fcc) structure. The XRD results also revealed that the degree of crystallinity and residual stress of the thin films were strongly dependent on the number of shots. X-ray photoelectron spectroscopy showed the Mo 3d3/2, Mo 3d5/2, Mo 3p3/2 and N 1s peaks for all of the thin films, confirming the formation of the γ-Mo2N structure. Scanning electron microscopy images showed the growth of granular structures and then the formation of larger-sized agglomerates on the surfaces of the samples with increasing numbers of shots. Atomic force microscopy indicated that grain sizes on surface layers as well as the average and root mean square roughness increased for samples deposited with more shots. Furthermore, the variations in hardness and electrical resistivity of the deposited MoN thin films were qualitatively explained on the basis of the morphological properties of the samples.

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