Anisotropic magnetoresistance in the normal state of oxygen-deficient YBa2Cu3O7?? thin films induced by superconducting fluctuations

1995 ◽  
Vol 98 (4) ◽  
pp. 453-456 ◽  
Author(s):  
W. Lang ◽  
W. G�b ◽  
W. Kula ◽  
Roman Sobolewski
Keyword(s):  
Thin Films ◽  
Normal State ◽  
Anisotropic Magnetoresistance ◽  
Superconducting Fluctuations

Magnetoresistance of superconducting HoBa2Cu3O7 thin films in the normal state

1991 ◽  
Vol 185-189 ◽  
pp. 1287-1288
Author(s):  
C.A. González ◽  
P. Prieto ◽  
D. Oyola ◽  
J.L. Vicent
Keyword(s):  
Thin Films ◽  
Normal State

Anisotropic magnetoresistance and anomalous Hall effect in manganite thin films

2005 ◽  
Vol 17 (17) ◽  
pp. 2733-2740 ◽  
Author(s):  
M Bibes ◽  
V Laukhin ◽  
S Valencia ◽  
B Martínez ◽  
J Fontcuberta ◽  
...  
Keyword(s):  
Thin Films ◽  
Hall Effect ◽  
Anomalous Hall Effect ◽  
Anisotropic Magnetoresistance

Signs of anisotropic magnetoresistance in Co2MnGa Heusler alloy epitaxial thin films based on current direction

2019 ◽  
Vol 12 (10) ◽  
pp. 103005 ◽  
Author(s):  
Takashi Sato ◽  
Satoshi Kokado ◽  
Masahito Tsujikawa ◽  
Tomoyuki Ogawa ◽  
Satoru Kosaka ◽  
...  
Keyword(s):  
Thin Films ◽  
Heusler Alloy ◽  
Anisotropic Magnetoresistance ◽  
Epitaxial Thin Films ◽  
Current Direction

Effects of ZnO layer on anisotropy magnetoresistance of Ni81Fe19 films

2014 ◽  
Vol 28 (06) ◽  
pp. 1450043 ◽  
Author(s):  
Shuyun Wang ◽  
Yuanmei Gao ◽  
Tiejun Gao ◽  
Yuan He ◽  
Hui Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Layer Thickness ◽  
Magnetic Thin Films ◽  
Anisotropic Magnetoresistance ◽  
Experimental Conditions ◽  
Method Effects ◽  
20 Nm

A series of Ta (4 nm)/ ZnO (t nm )/ Ni 81 Fe 19 (20 nm)/ ZnO (t nm )/ Ta (3 nm) magnetic thin films were prepared on lower experimental conditions by magnetron sputtering method. Effects of ZnO layer thickness and substrate temperature on anisotropic magnetoresistance and magnetic properties of these Ni 81 Fe 19 films have been investigated. The experiment results show that the anisotropic magnetoresistance value of the Ni 81 Fe 19 film is enhanced with the increasing of the inserted ZnO layer thickness. When the ZnO thickness is 2 nm, the anisotropic magnetoresistance value achieves the maximum. In addition, the anisotropic magnetoresistance of the Ni 81 Fe 19 film is also enhanced with the increasing of substrate temperature, and when the temperature is 450°C, the anisotropic magnetoresistance reaches the maximum. The anisotropic magnetoresistance value of 20 nm Ni 81 Fe 19 films with 2 nm ZnO layer can achieve 3.63% at 450°C which is enhanced 11.6% compare with the films without ZnO layer.

Hall effect aboveTcin untwinned single-crystalYBa2Cu3O7−x: Normal-state behavior and superconducting fluctuations

1991 ◽  
Vol 44 (18) ◽  
pp. 10158-10166 ◽  
Author(s):  
J. P. Rice ◽  
J. Giapintzakis ◽  
D. M. Ginsberg ◽  
J. M. Mochel
Keyword(s):  
Hall Effect ◽  
Normal State ◽  
State Behavior ◽  
Superconducting Fluctuations
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