Photoelectronic characterization of n-type silicon wafers using photocarrier radiometry

A. Gutiérrez; M.E. Rodríguez-García; J. Giraldo

doi:10.1016/j.physb.2011.06.073

Photoelectronic characterization of n-type silicon wafers using photocarrier radiometry

Physica B Condensed Matter ◽

10.1016/j.physb.2011.06.073 ◽

2011 ◽

Vol 406 (19) ◽

pp. 3687-3693 ◽

Cited By ~ 3

Author(s):

A. Gutiérrez ◽

M.E. Rodríguez-García ◽

J. Giraldo

Keyword(s):

Silicon Wafers ◽

Photocarrier Radiometry ◽

Type Silicon

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Electronic transport characterization of silicon wafers by combination of modulated free carrier absorption and photocarrier radiometry

Journal of Applied Physics ◽

10.1063/1.3536620 ◽

2011 ◽

Vol 109 (2) ◽

pp. 023708 ◽

Cited By ~ 9

Author(s):

Qiuping Huang ◽

Bincheng Li

Keyword(s):

Electronic Transport ◽

Free Carrier ◽

Silicon Wafers ◽

Free Carrier Absorption ◽

Photocarrier Radiometry ◽

Carrier Absorption

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Influence of Nonlinearity on Electronic Transport Characterization of Ion-Implanted Silicon Wafers with Photocarrier Radiometry

International Journal of Thermophysics ◽

10.1007/s10765-019-2578-1 ◽

2019 ◽

Vol 41 (1) ◽

Cited By ~ 1

Author(s):

Xiaoke Lei ◽

Bincheng Li ◽

Qiming Sun ◽

Jing Wang ◽

Chunming Gao

Keyword(s):

Electronic Transport ◽

Silicon Wafers ◽

Photocarrier Radiometry ◽

Ion Implanted

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Combined frequency- and time-domain photocarrier radiometry characterization of ion-implanted and thermally annealed silicon wafers

Chinese Physics B ◽

10.1088/1674-1056/22/5/057202 ◽

2013 ◽

Vol 22 (5) ◽

pp. 057202 ◽

Cited By ~ 1

Author(s):

Sheng-Dong Ren ◽

Bin-Cheng Li ◽

Li-Feng Gao ◽

Qian Wang

Keyword(s):

Time Domain ◽

Silicon Wafers ◽

Photocarrier Radiometry ◽

Ion Implanted

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Accurate electronic transport characterization of B+ ion-implanted silicon wafers with self-normalized nonlinear photocarrier radiometry

Infrared Physics & Technology ◽

10.1016/j.infrared.2020.103533 ◽

2020 ◽

Vol 111 ◽

pp. 103533

Author(s):

Xiaoke Lei ◽

Bincheng Li ◽

Qiming Sun ◽

Jing Wang ◽

Chunming Gao ◽

...

Keyword(s):

Electronic Transport ◽

Silicon Wafers ◽

Photocarrier Radiometry ◽

Ion Implanted

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Electronic transport characterization of B+ ion-implanted silicon wafers with nonlinear photocarrier radiometry

Journal of Applied Physics ◽

10.1063/1.5133668 ◽

2020 ◽

Vol 127 (3) ◽

pp. 035701 ◽

Cited By ~ 3

Author(s):

Xiaoke Lei ◽

Bincheng Li ◽

Qiming Sun ◽

Jing Wang ◽

Chunming Gao

Keyword(s):

Electronic Transport ◽

Silicon Wafers ◽

Photocarrier Radiometry ◽

Ion Implanted

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Accuracy Improvement of Multi-parameter Estimation in Combined Photocarrier Radiometry and Free Carrier Absorption for Characterization of Silicon Wafers

International Journal of Thermophysics ◽

10.1007/s10765-012-1267-0 ◽

2012 ◽

Vol 33 (10-11) ◽

pp. 2076-2081

Author(s):

Qiuping Huang ◽

Bincheng Li ◽

Shengdong Ren

Keyword(s):

Parameter Estimation ◽

Free Carrier ◽

Silicon Wafers ◽

Free Carrier Absorption ◽

Photocarrier Radiometry ◽

Accuracy Improvement ◽

Carrier Absorption

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Characterization of Silicon Wafers with Combined Photocarrier Radiometry and Free Carrier Absorption

International Journal of Thermophysics ◽

10.1007/s10765-013-1506-z ◽

2013 ◽

Vol 34 (8-9) ◽

pp. 1735-1745 ◽

Cited By ~ 1

Author(s):

Bincheng Li ◽

Qiuping Huang ◽

Shengdong Ren

Keyword(s):

Free Carrier ◽

Silicon Wafers ◽

Free Carrier Absorption ◽

Photocarrier Radiometry ◽

Carrier Absorption

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H+ ion-implantation energy dependence of electronic transport properties in the MeV range in n-type silicon wafers using frequency-domain photocarrier radiometry

Journal of Applied Physics ◽

10.1063/1.2748868 ◽

2007 ◽

Vol 101 (12) ◽

pp. 123109 ◽

Cited By ~ 15

Author(s):

Chinhua Wang ◽

Andreas Mandelis ◽

Jordan Tolev ◽

Bernd Burchard ◽

Jan Meijer

Keyword(s):

Ion Implantation ◽

Transport Properties ◽

Frequency Domain ◽

Energy Dependence ◽

Electronic Transport ◽

Silicon Wafers ◽

Photocarrier Radiometry ◽

Implantation Energy ◽

Electronic Transport Properties ◽

Type Silicon

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Unexpectedly High Minority-Carrier Lifetimes Exceeding 20 ms Measured on 1.4-Ω cm n -Type Silicon Wafers

physica status solidi (RRL) - Rapid Research Letters ◽

10.1002/pssr.201700235 ◽

2017 ◽

Vol 11 (11) ◽

pp. 1700235 ◽

Cited By ~ 8

Author(s):

Boris A. Veith-Wolf ◽

Jan Schmidt

Keyword(s):

Minority Carrier ◽

Silicon Wafers ◽

Carrier Lifetimes ◽

Type Silicon ◽

Minority Carrier Lifetimes

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Necessity of a Thorough Characterization of Functionalized Silicon Wafers before Biointerface Studies

The Journal of Physical Chemistry C ◽

10.1021/jp201377n ◽

2011 ◽

Vol 115 (22) ◽

pp. 11102-11111 ◽

Cited By ~ 23

Author(s):

Judith Böhmler ◽

Lydie Ploux ◽

Vincent Ball ◽

Karine Anselme ◽

Arnaud Ponche

Keyword(s):

Silicon Wafers

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