Electronic transport characterization of B+ ion-implanted silicon wafers with nonlinear photocarrier radiometry

2020 ◽  
Vol 127 (3) ◽  
pp. 035701 ◽  
Author(s):  
Xiaoke Lei ◽  
Bincheng Li ◽  
Qiming Sun ◽  
Jing Wang ◽  
Chunming Gao
Keyword(s):  
Electronic Transport ◽  
Silicon Wafers ◽  
Photocarrier Radiometry ◽  
Ion Implanted

Photoelectronic characterization of n-type silicon wafers using photocarrier radiometry

2011 ◽  
Vol 406 (19) ◽  
pp. 3687-3693 ◽  
Author(s):  
A. Gutiérrez ◽  
M.E. Rodríguez-García ◽  
J. Giraldo
Keyword(s):  
Silicon Wafers ◽  
Photocarrier Radiometry ◽  
Type Silicon

Accuracy of photocarrier radiometric measurement of electronic transport properties of ion-implanted silicon wafers

2004 ◽  
Vol 96 (1) ◽  
pp. 186-196 ◽  
Author(s):  
Bincheng Li ◽  
Derrick Shaughnessy ◽  
Andreas Mandelis ◽  
Jerias Batista ◽  
Jose Garcia
Keyword(s):  
Transport Properties ◽  
Electronic Transport ◽  
Silicon Wafers ◽  
Radiometric Measurement ◽  
Electronic Transport Properties ◽  
Ion Implanted

Three-layer photocarrier radiometry model of ion-implanted silicon wafers

2004 ◽  
Vol 95 (12) ◽  
pp. 7832-7840 ◽  
Author(s):  
Bincheng Li ◽  
Derrick Shaughnessy ◽  
Andreas Mandelis ◽  
Jerias Batista ◽  
Jose Garcia
Keyword(s):  
Silicon Wafers ◽  
Photocarrier Radiometry ◽  
Ion Implanted
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