H+ ion-implantation energy dependence of electronic transport properties in the MeV range in n-type silicon wafers using frequency-domain photocarrier radiometry

2007 ◽  
Vol 101 (12) ◽  
pp. 123109 ◽  
Author(s):  
Chinhua Wang ◽  
Andreas Mandelis ◽  
Jordan Tolev ◽  
Bernd Burchard ◽  
Jan Meijer
Keyword(s):  
Ion Implantation ◽  
Transport Properties ◽  
Frequency Domain ◽  
Energy Dependence ◽  
Electronic Transport ◽  
Silicon Wafers ◽  
Photocarrier Radiometry ◽  
Implantation Energy ◽  
Electronic Transport Properties ◽  
Type Silicon

Accuracy of photocarrier radiometric measurement of electronic transport properties of ion-implanted silicon wafers

2004 ◽  
Vol 96 (1) ◽  
pp. 186-196 ◽  
Author(s):  
Bincheng Li ◽  
Derrick Shaughnessy ◽  
Andreas Mandelis ◽  
Jerias Batista ◽  
Jose Garcia
Keyword(s):  
Transport Properties ◽  
Electronic Transport ◽  
Silicon Wafers ◽  
Radiometric Measurement ◽  
Electronic Transport Properties ◽  
Ion Implanted

ELECTRONIC TRANSPORT PROPERTIES OF SILICON NANOWIRE CAGE

2018 ◽  
Author(s):  
Shenqiu Mo ◽  
Dengke Ma ◽  
Lina Yang ◽  
Meng An ◽  
Zhiyu Liu ◽  
...  
Keyword(s):  
Transport Properties ◽  
Electronic Transport ◽  
Silicon Nanowire ◽  
Electronic Transport Properties
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