P-8: Hydrogen Plasma Treatment on the Electrical Characterization of Inverted Staggered Pentacene Thin Film Transistors

2003 ◽  
Vol 34 (1) ◽  
pp. 232
Author(s):  
Jae Won Chang ◽  
Hoon Kim ◽  
Jong Moo Kim ◽  
Jai-Kyeong Kim ◽  
Young-Chul Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Plasma Treatment ◽  
Thin Film Transistors ◽  
Hydrogen Plasma ◽  
Electrical Characterization

Electrical characterization of Cu-doped CdS p-type thin film transistors

2021 ◽  
Author(s):  
D. Berman-Mendoza ◽  
O. I. Diaz-Grijalva ◽  
R. López-Delgado ◽  
A. Ramos-Carrazco ◽  
M. E. Alvarez-Ramos ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Electrical Characterization ◽  
P Type

Role of in-situ hydrogen plasma treatment on gate bias stability and performance of a-IGZO thin-film transistors

2021 ◽  
Author(s):  
Om Kumar Prasad ◽  
Srikant Kumar Mohanty ◽  
ChienHung Wu ◽  
Tsung Ying Yu ◽  
K-M Chang
Keyword(s):  
Thin Film ◽  
Plasma Treatment ◽  
Thin Film Transistors ◽  
Hydrogen Plasma ◽  
Gate Bias ◽  
Bias Stability ◽  
And Performance

Electrical Characterization of Zinc-Rich Amorphous In-Ga-Zn-O Thin Film Transistors

2018 ◽  
Vol 215 (21) ◽  
pp. 1800085 ◽  
Author(s):  
Mototaka Ochi ◽  
Aya Hino ◽  
Hiroshi Goto ◽  
Kazushi Hayashi ◽  
Toshihiro Kugimiya
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Electrical Characterization

Temperature-Dependent Electrical Characterization of Amorphous Indium Zinc Oxide Thin-Film Transistors

2017 ◽  
Vol 64 (8) ◽  
pp. 3183-3188 ◽  
Author(s):  
Keun Heo ◽  
Kyung-Sang Cho ◽  
Jun Young Choi ◽  
Sangmin Han ◽  
Yun Seop Yu ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Electrical Characterization ◽  
Oxide Thin Film ◽  
Zinc Oxide Thin Film ◽  
Temperature Dependent ◽  
Indium Zinc Oxide

Electrical characterization of pentacene thin-film transistors with polymeric gate dielectric

2004 ◽  
Vol 146 (3) ◽  
pp. 355-358 ◽  
Author(s):  
J. Puigdollers ◽  
C. Voz ◽  
I. Martín ◽  
M. Vetter ◽  
A. Orpella ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Electrical Characterization

Study of Atmospheric-Pressure Plasma Enhanced Chemical Vapor Deposition Fabricated Indium Gallium Zinc Oxide Thin Film Transistors with In-Situ Hydrogen Plasma Treatment

2020 ◽  
Vol 20 (7) ◽  
pp. 4110-4113 ◽  
Author(s):  
Yi-Ming Chen ◽  
Chien-Hung Wu ◽  
Kow-Ming Chang ◽  
Yu-Xin Zhang ◽  
Ni Xu ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Plasma Treatment ◽  
Atmospheric Pressure ◽  
Thin Film Transistors ◽  
Hydrogen Plasma ◽  
Atmospheric Pressure Plasma ◽  
Oxide Thin Film ◽  
Pressure Plasma

Amorphous InGaZnO (a-IGZO) Thin Film Transistors (TFTs) has been studied extensively for their perspective applications in next generation active-matrix displays such as liquid crystal displays and flat-panel displays, due to its better field-effect mobility (>10 cm2/V · S), larger Ion/Ioff ratio (>106), and better stability electrical. Hydrogen is known as shallow donors for n-type (channel) oxide semiconductors (Dong, J.J., et al. 2010. Effects of hydrogen plasma treatment on the electrical and optical properties of Zno films: Identification of hydrogen donors in ZnO. ACS Appl. Mater. Interfaces, 2, pp.1780–1784), and it is also effective passivator for traps (Tsao, S.W., et al., 2010. Hydrogen-induced improvements in electrical characteristics of a-IGZO thin-film transistors. Solid-State Electron, 54, pp.1497–1499). In this study, In-Situ hydrogen plasma is applied to deposit IGZO channel. With atmospheric-pressure PECVD (AP-PECVD), IGZO thin film can be deposited without vacuum system, large area manufacturing, and cost reducing (Chang, K.M., et al., 2011. Transparent conductive indium-doped zinc oxide films prepared by atmospheric pressure plasma jet. Thin Solid Films, 519, pp.5114–5117). The results show that with appropriate flow ratio of Ar/H2 plasma treatment, the a-IGZO TFT device exhibits better performance with mobility (μFE) 19.7 cm2/V · S, threshold voltage (VT) 1.18 V, subthreshold swing (SS) 81 mV/decade, and Ion/Ioff ratio 5.35×107.

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