Tunneling magnetoresistance of Fe/ZnSe (001) single- and double-barrier junctions as a function of interface structure

J. Peralta-Ramos; A.M. Llois

doi:10.1016/j.physb.2007.04.046

Tunneling magnetoresistance of Fe/ZnSe (001) single- and double-barrier junctions as a function of interface structure

Physica B Condensed Matter ◽

10.1016/j.physb.2007.04.046 ◽

2007 ◽

Vol 398 (2) ◽

pp. 393-396 ◽

Cited By ~ 2

Author(s):

J. Peralta-Ramos ◽

A.M. Llois

Keyword(s):

Interface Structure ◽

Tunneling Magnetoresistance ◽

Double Barrier

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Resonant tunneling effect and tunneling magnetoresistance in GaMnAs quantum-well double-barrier heterostructures

physica status solidi (c) ◽

10.1002/pssc.200672882 ◽

2006 ◽

Vol 3 (12) ◽

pp. 4184-4187 ◽

Cited By ~ 10

Author(s):

S. Ohya ◽

P. N. Hai ◽

Y. Mizuno ◽

M. Tanaka

Keyword(s):

Quantum Well ◽

Resonant Tunneling ◽

Tunneling Effect ◽

Tunneling Magnetoresistance ◽

Double Barrier ◽

Resonant Tunneling Effect

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Shot noise and tunneling magnetoresistance in disordered MgO-based double-barrier magnetic tunnel junctions: First-principles study

Physical Review B ◽

10.1103/physrevb.97.174420 ◽

2018 ◽

Vol 97 (17) ◽

Cited By ~ 2

Author(s):

Junting Yang ◽

Jiawei Yan ◽

Shizhuo Wang ◽

Youqi Ke

Keyword(s):

Shot Noise ◽

First Principles ◽

Tunnel Junctions ◽

Magnetic Tunnel Junctions ◽

Tunneling Magnetoresistance ◽

Double Barrier ◽

First Principles Study

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Temperature dependence of tunneling magnetoresistance: Double-barrier versus single-barrier junctions

Journal of Applied Physics ◽

10.1063/1.1452232 ◽

2002 ◽

Vol 91 (10) ◽

pp. 7956 ◽

Cited By ~ 11

Author(s):

J. H. Lee ◽

K. I. Lee ◽

W. L. Lee ◽

K.-H. Shin ◽

J. S. Lee ◽

...

Keyword(s):

Temperature Dependence ◽

Tunneling Magnetoresistance ◽

Double Barrier

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Influence of strain on the tunneling magnetoresistance in diluted magnetic semiconductor trilayer and double barrier structures

Solid State Communications ◽

10.1016/j.ssc.2006.11.012 ◽

2007 ◽

Vol 141 (6) ◽

pp. 320-324

Author(s):

P. Krstajić ◽

F.M. Peeters

Keyword(s):

Diluted Magnetic Semiconductor ◽

Magnetic Semiconductor ◽

Tunneling Magnetoresistance ◽

Double Barrier ◽

Diluted Magnetic

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Influence of annealing on the bias voltage dependence of tunneling magnetoresistance in MgO double-barrier magnetic tunnel junctions with CoFeB electrodes

Applied Physics Letters ◽

10.1063/1.2362977 ◽

2006 ◽

Vol 89 (16) ◽

pp. 162501 ◽

Cited By ~ 32

Author(s):

Gen Feng ◽

Sebastiaan van Dijken ◽

J. M. D. Coey

Keyword(s):

Bias Voltage ◽

Voltage Dependence ◽

Tunnel Junctions ◽

Magnetic Tunnel Junctions ◽

Tunneling Magnetoresistance ◽

Double Barrier ◽

Bias Voltage Dependence

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Quantum-Well Based Tunneling Magnetoresistance Effect in Double-Barrier Magnetic Tunnel Junctions

10.7567/ssdm.2016.g-3-01 ◽

2016 ◽

Author(s):

X. Han

Keyword(s):

Quantum Well ◽

Tunnel Junctions ◽

Magnetic Tunnel Junctions ◽

Tunneling Magnetoresistance ◽

Magnetoresistance Effect ◽

Double Barrier

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Temperature and bias-voltage dependences of tunneling magnetoresistance in (Ga,Mn)As-based double-barrier magnetic tunnel junctions

Journal of Applied Physics ◽

10.1063/1.2838291 ◽

2008 ◽

Vol 103 (7) ◽

pp. 07A908 ◽

Cited By ~ 2

Author(s):

J. Okabayashi ◽

M. Watanabe ◽

T. Yamaguchi ◽

J. Yoshino

Keyword(s):

Bias Voltage ◽

Tunnel Junctions ◽

Magnetic Tunnel Junctions ◽

Tunneling Magnetoresistance ◽

Double Barrier

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Layer-thickness dependence in tunneling magnetoresistance and current-driven magnetization reversal using GaMnAs-based double-barrier structures

Physica E Low-dimensional Systems and Nanostructures ◽

10.1016/j.physe.2007.06.063 ◽

2007 ◽

Vol 40 (2) ◽

pp. 335-338 ◽

Cited By ~ 3

Author(s):

Maya Watanabe ◽

Hiroshi Toyao ◽

Jun Okabayashi ◽

Takeshi Yamaguchi ◽

Junji Yoshino

Keyword(s):

Layer Thickness ◽

Magnetization Reversal ◽

Thickness Dependence ◽

Tunneling Magnetoresistance ◽

Double Barrier

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Tunable Tunneling Magnetoresistance in In-plane double barrier Magnetic Tunnel Junctions based on B Vacancy h-NB Nanoribbons

Physical Chemistry Chemical Physics ◽

10.1039/d1cp04895c ◽

2022 ◽

Author(s):

Hailin Yu ◽

Zhengguang Shao ◽

Yongmei Tao ◽

Xuefan Jiang ◽

Yaojun Dong ◽

...

Keyword(s):

Magnetic Materials ◽

Tunnel Junctions ◽

Magnetic Tunnel Junctions ◽

Tunneling Magnetoresistance ◽

Two Dimensional ◽

Double Barrier

Magnetic tunnel junctions (MTJs) have attained new opportunities due to the emergence of two-dimensional (2D) magnetic materials after it has been proposed more than forty years. Here, an in-plane double...

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Spin-polarization in InAs/AlSb double barrier resonant tunneling structures: influence of barrier material and interface structure

Physics Procedia ◽

10.1016/j.phpro.2010.01.177 ◽

2010 ◽

Vol 3 (2) ◽

pp. 1287-1290 ◽

Cited By ~ 1

Author(s):

Satofumi Souma ◽

Matsuto Ogawa

Keyword(s):

Spin Polarization ◽

Resonant Tunneling ◽

Interface Structure ◽

Barrier Material ◽

Double Barrier ◽

Double Barrier Resonant Tunneling

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