Layer-thickness dependence in tunneling magnetoresistance and current-driven magnetization reversal using GaMnAs-based double-barrier structures

2007 ◽  
Vol 40 (2) ◽  
pp. 335-338 ◽  
Author(s):  
Maya Watanabe ◽  
Hiroshi Toyao ◽  
Jun Okabayashi ◽  
Takeshi Yamaguchi ◽  
Junji Yoshino
Keyword(s):  
Layer Thickness ◽  
Magnetization Reversal ◽  
Thickness Dependence ◽  
Tunneling Magnetoresistance ◽  
Double Barrier

Layer thickness dependence of anisotropic coupling in Gd/Y superlattices

1992 ◽  
Vol 104-107 ◽  
pp. 1901-1902 ◽  
Author(s):  
F. Tsui ◽  
C.P. Flynn ◽  
M.B. Salamon ◽  
J.A. Borchers ◽  
R.W. Erwin ◽  
...  
Keyword(s):  
Layer Thickness ◽  
Thickness Dependence

Fabrication and magnetic behavior of Co/Cu multilayered nanowires

2006 ◽  
Vol 21 (11) ◽  
pp. 2870-2875 ◽  
Author(s):  
Liwen Tan ◽  
Bethanie J.H. Stadler
Keyword(s):  
Layer Thickness ◽  
Electrochemical Deposition ◽  
Magnetization Reversal ◽  
Applied Field ◽  
Magnetic Behavior ◽  
Anodic Alumina ◽  
Cu Nanowires ◽  
Anodic Alumina Templates ◽  
Multilayered Nanowires

Multilayered Co/Cu nanowires were fabricated using anodic alumina templates, containing 40-nm-diameter nanopores, and electrochemical deposition. The Cu layer thickness was varied to study the resulting differences in coercivity and magnetization reversal. Magnetization versus field loops both parallel and perpendicular to an applied field were measured to investigate the mechanisms of magnetization reversal. It was found that the coercivity decreased with increasing Cu thickness. In addition, the magnetization reversal appeared to be a combination of rotation and spin flipping, which was dependent on the Cu thickness and on the angle of the nanowires with the applied field.

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