Influence of strain on the tunneling magnetoresistance in diluted magnetic semiconductor trilayer and double barrier structures

2007 ◽  
Vol 141 (6) ◽  
pp. 320-324
Author(s):  
P. Krstajić ◽  
F.M. Peeters
Keyword(s):  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Tunneling Magnetoresistance ◽  
Double Barrier ◽  
Diluted Magnetic

SPIN DEPENDENT WIGNER FUNCTION SIMULATIONS OF DILUTED MAGNETIC SEMICONDUCTOR SUPERLATTICES – B FIELD TUNING

2007 ◽  
Vol 17 (04) ◽  
pp. 877-888 ◽  
Author(s):  
H. L. GRUBIN
Keyword(s):  
High Frequency ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Device Fabrication ◽  
Double Barrier ◽  
General Terms ◽  
High Frequency Operation ◽  
Diluted Magnetic ◽  
Superlattice Structures ◽  
The Magnetic Field

Two terminal devices have traditionally provided band-structure based high frequency operation. Third terminal control often involves hybrid design approaches. The presence of diluted magnetic semiconductor layers in device fabrication should permit the magnetic field to function as a pseudothird terminal. This is discussed for single barrier, double barrier and superlattice structures, where control is demonstrated. The limits of high frequency operation are discussed in general terms with application to barrier devices and superlattices containing DMS layers.

Magnetic studies of PbMnI2 Layered Diluted Magnetic Semiconductor Nanoparticles

2018 ◽  
Vol 10 (5) ◽  
pp. 05005-1-05005-5
Author(s):  
I. D. Stolyarchuk ◽  
◽  
I. Rogalska ◽  
S. V. Koretskii ◽  
I. Stefaniuk ◽  
...  
Keyword(s):  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Semiconductor Nanoparticles ◽  
Magnetic Studies ◽  
Diluted Magnetic

The distinct behavior of specific heat of diluted magnetic semiconductor (Ga,Mn)As quantum wells

2015 ◽  
Vol 15 ◽  
pp. S26-S29 ◽  
Author(s):  
Hee Chang Jeon ◽  
Mingkai Li ◽  
Seung Joo Lee ◽  
Gukhyung Ihm ◽  
Tae Won Kang ◽  
...  
Keyword(s):  
Specific Heat ◽  
Quantum Wells ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Diluted Magnetic

scholarly journals Drastic improvement of Curie temperature by chemical pressure in N-type diluted magnetic semiconductor Ba(Zn,Co)$$_{2}$$As$$_{2}$$

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Licheng Fu ◽  
Yilun Gu ◽  
Guoxiang Zhi ◽  
Haojie Zhang ◽  
Rufei Zhang ◽  
...  
Keyword(s):  
Unit Cell Volume ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Vital Role ◽  
Ferromagnetic Transition ◽  
Chemical Pressure ◽  
Tetragonal Crystal ◽  
Tetragonal Crystal Structure ◽  
Diluted Magnetic ◽  
Ferromagnetic Ordering

AbstractWe report the effect of chemical pressure on the ferromagnetic ordering of the recently reported n-type diluted magnetic semiconductor Ba(Zn$$_{1-x}$$ 1 - x Co$$_{x}$$ x )$$_{2}$$ 2 As$$_{2}$$ 2 which has a maximum $$T_C$$ T C $$\sim$$ ∼ 45 K. Doping Sb into As-site and Sr into Ba-site induces negative and positive chemical pressure, respectively. While conserving the tetragonal crystal structure and n-type carriers, the unit cell volume shrink by $$\sim$$ ∼ 0.3$$\%$$ % with 15$$\%$$ % Sr doping, but drastically increase the ferromagnetic transition temperature by 18$$\%$$ % to 53 K. Our experiment unequivocally demonstrate that the parameters of Zn(Co)As$$_{4}$$ 4 tetrahedra play a vital role in the formation of ferromagnetic ordering in the Ba(Zn,Co)$$_{2}$$ 2 As$$_{2}$$ 2 DMS.

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