Temperature and bias-voltage dependences of tunneling magnetoresistance in (Ga,Mn)As-based double-barrier magnetic tunnel junctions

J. Okabayashi; M. Watanabe; T. Yamaguchi; J. Yoshino

doi:10.1063/1.2838291

Temperature and bias-voltage dependences of tunneling magnetoresistance in (Ga,Mn)As-based double-barrier magnetic tunnel junctions

Journal of Applied Physics ◽

10.1063/1.2838291 ◽

2008 ◽

Vol 103 (7) ◽

pp. 07A908 ◽

Cited By ~ 2

Author(s):

J. Okabayashi ◽

M. Watanabe ◽

T. Yamaguchi ◽

J. Yoshino

Keyword(s):

Bias Voltage ◽

Tunnel Junctions ◽

Magnetic Tunnel Junctions ◽

Tunneling Magnetoresistance ◽

Double Barrier

Download Full-text

Influence of annealing on the bias voltage dependence of tunneling magnetoresistance in MgO double-barrier magnetic tunnel junctions with CoFeB electrodes

Applied Physics Letters ◽

10.1063/1.2362977 ◽

2006 ◽

Vol 89 (16) ◽

pp. 162501 ◽

Cited By ~ 32

Author(s):

Gen Feng ◽

Sebastiaan van Dijken ◽

J. M. D. Coey

Keyword(s):

Bias Voltage ◽

Voltage Dependence ◽

Tunnel Junctions ◽

Magnetic Tunnel Junctions ◽

Tunneling Magnetoresistance ◽

Double Barrier ◽

Bias Voltage Dependence

Download Full-text

Bias voltage effect on tunnel magnetoresistance in fully epitaxial MgO double-barrier magnetic tunnel junctions

Applied Physics Letters ◽

10.1063/1.1867559 ◽

2005 ◽

Vol 86 (8) ◽

pp. 082501 ◽

Cited By ~ 41

Author(s):

T. Nozaki ◽

A. Hirohata ◽

N. Tezuka ◽

S. Sugimoto ◽

K. Inomata

Keyword(s):

Bias Voltage ◽

Tunnel Junctions ◽

Magnetic Tunnel Junctions ◽

Double Barrier ◽

Tunnel Magnetoresistance

Download Full-text

Shot noise and tunneling magnetoresistance in disordered MgO-based double-barrier magnetic tunnel junctions: First-principles study

Physical Review B ◽

10.1103/physrevb.97.174420 ◽

2018 ◽

Vol 97 (17) ◽

Cited By ~ 2

Author(s):

Junting Yang ◽

Jiawei Yan ◽

Shizhuo Wang ◽

Youqi Ke

Keyword(s):

Shot Noise ◽

First Principles ◽

Tunnel Junctions ◽

Magnetic Tunnel Junctions ◽

Tunneling Magnetoresistance ◽

Double Barrier ◽

First Principles Study

Download Full-text

Suppression of bias voltage dependence in double-barrier magnetic tunnel junctions comprised of freelayers with an amorphous layer insertion

Journal of Applied Physics ◽

10.1063/1.1853839 ◽

2005 ◽

Vol 97 (10) ◽

pp. 10C917 ◽

Cited By ~ 7

Author(s):

Min-Sung Song ◽

Byong Sun Chun ◽

Young Keun Kim ◽

Injun Hwang ◽

Taewan Kim

Keyword(s):

Bias Voltage ◽

Voltage Dependence ◽

Tunnel Junctions ◽

Magnetic Tunnel Junctions ◽

Amorphous Layer ◽

Double Barrier ◽

Bias Voltage Dependence

Download Full-text

Quantum-Well Based Tunneling Magnetoresistance Effect in Double-Barrier Magnetic Tunnel Junctions

10.7567/ssdm.2016.g-3-01 ◽

2016 ◽

Author(s):

X. Han

Keyword(s):

Quantum Well ◽

Tunnel Junctions ◽

Magnetic Tunnel Junctions ◽

Tunneling Magnetoresistance ◽

Magnetoresistance Effect ◽

Double Barrier

Download Full-text

Tunable Tunneling Magnetoresistance in In-plane double barrier Magnetic Tunnel Junctions based on B Vacancy h-NB Nanoribbons

Physical Chemistry Chemical Physics ◽

10.1039/d1cp04895c ◽

2022 ◽

Author(s):

Hailin Yu ◽

Zhengguang Shao ◽

Yongmei Tao ◽

Xuefan Jiang ◽

Yaojun Dong ◽

...

Keyword(s):

Magnetic Materials ◽

Tunnel Junctions ◽

Magnetic Tunnel Junctions ◽

Tunneling Magnetoresistance ◽

Two Dimensional ◽

Double Barrier

Magnetic tunnel junctions (MTJs) have attained new opportunities due to the emergence of two-dimensional (2D) magnetic materials after it has been proposed more than forty years. Here, an in-plane double...

Download Full-text

Tunneling magnetoresistance oscillations due to charging effects in MgO double barrier magnetic tunnel junctions

Applied Physics Letters ◽

10.1063/1.3673557 ◽

2012 ◽

Vol 100 (1) ◽

pp. 012401 ◽

Cited By ~ 15

Author(s):

Ruisheng Liu ◽

See-Hun Yang ◽

Xin Jiang ◽

Teya Topuria ◽

Philip M. Rice ◽

...

Keyword(s):

Tunnel Junctions ◽

Magnetic Tunnel Junctions ◽

Tunneling Magnetoresistance ◽

Double Barrier ◽

Magnetoresistance Oscillations

Download Full-text

Tunneling magnetoresistance in GaMnAs∕AlAs∕InGaAs∕AlAs∕GaMnAs double-barrier magnetic tunnel junctions

Applied Physics Letters ◽

10.1063/1.1978976 ◽

2005 ◽

Vol 87 (1) ◽

pp. 012105 ◽

Cited By ~ 31

Author(s):

Shinobu Ohya ◽

Pham Nam Hai ◽

Masaaki Tanaka

Keyword(s):

Tunnel Junctions ◽

Magnetic Tunnel Junctions ◽

Tunneling Magnetoresistance ◽

Double Barrier

Download Full-text

Oscillations of tunneling magnetoresistance on bias voltage in magnetic tunnel junctions with periodic grating barrier

Journal of Applied Physics ◽

10.1063/1.5143827 ◽

2020 ◽

Vol 127 (16) ◽

pp. 163902

Author(s):

Henan Fang ◽

Xuan Zang ◽

Mingwen Xiao ◽

Yuanyuan Zhong ◽

Zhikuo Tao

Keyword(s):

Bias Voltage ◽

Tunnel Junctions ◽

Magnetic Tunnel Junctions ◽

Tunneling Magnetoresistance ◽

Periodic Grating

Download Full-text

Tunneling magnetoresistance of double-barrier magnetic tunnel junctions in sequential and coherent regimes

Physical Review B ◽

10.1103/physrevb.73.014432 ◽

2006 ◽

Vol 73 (1) ◽

Cited By ~ 9

Author(s):

Zhi Ping Niu ◽

Zhi Bo Feng ◽

Jun Yang ◽

D. Y. Xing

Keyword(s):

Tunnel Junctions ◽

Magnetic Tunnel Junctions ◽

Tunneling Magnetoresistance ◽

Double Barrier

Download Full-text