Deep Level Defects in Mg-Doped GaN

1996 ◽  
Vol 423 ◽  
Author(s):  
Gyu-Chul Yi ◽  
Bruce W. Wessels
Keyword(s):  
Excited State ◽  
Schottky Barrier ◽  
Vapor Phase ◽  
Deep Level ◽  
Relaxation Times ◽  
Trapping Level ◽  
Organic Vapor ◽  
Metal Organic ◽  
Threshold Energies ◽  
Mg Doped

AbstractDeep level defects in Mg compensated GaN grown by metal-organic vapor phase epitaxy were investigated using photocapacitance spectroscopy measurements on Schottky barrier diodes. Addition of magnesium resulted in the formation of a series of deep centers with optical threshold energies of 1.0, 1.2, 1.8, and 3.1 eV. Upon annealing the epitaxial GCN in nitrogen at 850°C the ind-gap levels disappeared and only the trapping level at 3.1 eV remained. The mid-gap levels are ascribed to Mg dopant complexes which may in part be responsible for low doping efficiency of Mg in the as-grown, doped GaN. The deep level at 3.1 eV commonly observed from all Mgdoped GaN most likely involves the Mg acceptor. The photo-excited state of the 3.1 eV level had relaxation times of the order of 103 sec at 295 K.

scholarly journals Optical Properties Of Metastable Shallow Acceptors In Mg-Doped GaN Layers Grown By Metal-Organic Vapor Phase Epitaxy

2010 ◽  
Author(s):  
G. Pozina ◽  
C. Hemmingsson ◽  
J. P. Bergman ◽  
T. Kawashima ◽  
H. Amano ◽  
...  
Keyword(s):  
Optical Properties ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Metal Organic ◽  
Shallow Acceptors ◽  
Mg Doped

scholarly journals Metal-organic vapor phase epitaxial growth of high-quality ZnO films on Al2O3(00·1)

2001 ◽  
Vol 16 (5) ◽  
pp. 1358-1362 ◽  
Author(s):  
W. I. Park ◽  
S-J. An ◽  
Gyu-Chul Yi ◽  
Hyun M. Jang
Keyword(s):  
Vapor Phase ◽  
Deep Level ◽  
Stimulated Emission ◽  
Zno Films ◽  
High Quality ◽  
Organic Vapor ◽  
Good Crystallinity ◽  
Experimental Parameters ◽  
Metal Organic ◽  
Excitonic Emission

High-quality ZnO thin films were grown epitaxially at 250–550 °C Al2O3(00·1) substrates using low-pressure metalorganic vapor phase epitaxy. The reactants for the growth were diethylzinc and oxygen. Growth temperature, one of the important experimental parameters for epitaxial layers, was optimized. The films grown at 500 °C exhibited good crystallinity and strong ultraviolet absorption and emission. Photoluminescence spectra of the films showed a dominant excitonic emission with a weak deep level emission. More importantly, a strong stimulated emission peak was observed even at room temperature.

Deep Level Formation in Undoped and Oxygen-Doped GaN

2000 ◽  
Vol 639 ◽  
Author(s):  
J. M. Gregie ◽  
R. Y. Korotkov ◽  
B. W. Wessels
Keyword(s):  
Density Functional Theory ◽  
Steady State ◽  
Vapor Phase ◽  
Density Functional ◽  
Deep Level ◽  
Deep Level Defect ◽  
Functional Theory ◽  
Organic Vapor ◽  
Metal Organic ◽  
Formation Energies

ABSTRACTDeep level defects in oxygen doped GaN grown by metal-organic vapor phase epitaxy were investigated. Using steady-state photocapacitance (SSPC) spectroscopy, three deep levels with optical ionization energies of 1.0, 1.4, and 3.25 eV were observed in both nominally undoped and oxygen-doped samples. The total deep level defect concentrations ranged from 6 × 1015 cm-3 in undoped films to 3 × 1016 cm-3 in oxygen-doped films. The concentration of the 3.25 eV level defect increased upon oxygen doping, while the concentrationof the 1.0 and 1.4 eV levels were essentially dopant independent. From the measured concentrations the formation energies of the defects were calculated and compared to energies calculated using density functional theory.

Mg-doped high-quality AlxGa1–xN (x=0-1) grown by high-temperature metal-organic vapor phase epitaxy

2007 ◽  
Vol 4 (7) ◽  
pp. 2502-2505 ◽  
Author(s):  
M. Imura ◽  
N. Kato ◽  
N. Okada ◽  
K. Balakrishnan ◽  
M. Iwaya ◽  
...  
Keyword(s):  
High Temperature ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
High Quality ◽  
Organic Vapor ◽  
Metal Organic ◽  
Mg Doped

Effect of Magnesium and Silicon on the lateral overgrowth of GaN patterned substrates by Metal Organic Vapor Phase Epitaxy

1998 ◽  
Vol 3 ◽  
Author(s):  
S. Haffouz ◽  
B. Beaumont ◽  
Pierre Gibart
Keyword(s):  
Vapor Phase ◽  
Growth Conditions ◽  
Vapor Phase Epitaxy ◽  
The Other ◽  
Organic Vapor ◽  
Lateral Overgrowth ◽  
Metal Organic ◽  
Si Doped ◽  
Image Position ◽  
Mg Doped

Metalorganic vapor phase epitaxy was used to achieve selective regrowth of undoped, Mg- and Si-doped GaN on a silicon nitride patterned mask, capping a GaN epitaxial layer deposited on (0001) sapphire substrate. Hexagonal openings in the mask defined into 10 µm diameter circles separated by 5µm were used as a pattern for the present study. Uniform undoped and Mg-doped GaN hexagonal pyramids, delimited by C (0001) and R {101} facets, were achieved with a good selectivity. Si-doped GaN hexagonal pyramids delimited by vertical {100} facets and (0001) top facet were obtained for a high SiH4 flow rate in the vapor phase. We found that the GaN growth rates VR and VC, measured in the R <101> and C <0001> directions respectively, were drastically affected by the Mg and Si incorporation. By adjusting the Mg partial pressure in the growth chamber, the VR/VC ratio can be increased. Hence, the delimiting top C facet do not vanish as usually observed in undoped GaN selective regrowth but conversely expands. On the other hand, under proper growth conditions, 20µm-high Si-doped GaN columns were obtained.

Intrinsic and oxygen-related deep level defects in In0.5(AlxGa1−x)0.5P grown by metal-organic vapor phase epitaxy

1998 ◽  
Vol 195 (1-4) ◽  
pp. 63-68 ◽  
Author(s):  
J.G. Cederberg ◽  
B. Bieg ◽  
J.-W. Huang ◽  
S.A. Stockman ◽  
M.J. Peanasky ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Deep Level ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Metal Organic

Effects of growth pressure on AlGaN and Mg-doped GaN grown using multiwafer metal organic vapor phase epitaxy system

2004 ◽  
Vol 272 (1-4) ◽  
pp. 348-352 ◽  
Author(s):  
H. Tokunaga ◽  
A. Ubukata ◽  
Y. Yano ◽  
A. Yamaguchi ◽  
N. Akutsu ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Growth Pressure ◽  
Organic Vapor ◽  
Metal Organic ◽  
Mg Doped
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