Defect characterization of CdTe thin films using a slow positron beam

2007 ◽  
Vol 4 (10) ◽  
pp. 3659-3663 ◽  
Author(s):  
S. Neretina ◽  
D. Grebennikov ◽  
R. A. Hughes ◽  
M. Weber ◽  
K. G. Lynn ◽  
...  
Keyword(s):  
Thin Films ◽  
Positron Beam ◽  
Defect Characterization ◽  
Slow Positron ◽  
Cdte Thin Films

Defect Characterization of 6H-SiC Studied by Slow Positron Beam

2008 ◽  
Vol 21 (4) ◽  
pp. 333-338 ◽  
Author(s):  
Hai-yun Wang ◽  
Hui-min Weng ◽  
Xian-yi Zhou
Keyword(s):  
Positron Beam ◽  
Defect Characterization ◽  
Slow Positron

Characterization of Sputtered CdTe Thin Films by XPS, Auger and ELS Spectroscopies

1987 ◽  
pp. 56-59 ◽  
Author(s):  
I. Hernández-Calderón ◽  
J. L. Peña ◽  
S. Romero
Keyword(s):  
Thin Films ◽  
Cdte Thin Films

scholarly journals Characterization of CdTe thin films grown on glass by hot wall epitaxy

2006 ◽  
Vol 36 (2a) ◽  
pp. 317-319 ◽  
Author(s):  
Sukarno Olavo Ferreira ◽  
Fábio Fagundes Leal ◽  
Tatiana Estorani de Faria ◽  
José Eduardo de Oliveira ◽  
Paulo Motisuke ◽  
...  
Keyword(s):  
Thin Films ◽  
Cdte Thin Films ◽  
Hot Wall Epitaxy

Characterization of various reactor steels by slow positron beam

2019 ◽  
Author(s):  
Stanislav Sojak ◽  
Vladimír Kršjak ◽  
Jarmila Degmová ◽  
Martin Petriska ◽  
Vladimír Slugeň
Keyword(s):  
Positron Beam ◽  
Slow Positron ◽  
Reactor Steels

Characterization of vacancy‐type defects in Se‐implanted GaAs by means of a slow positron beam

1992 ◽  
Vol 72 (4) ◽  
pp. 1405-1409 ◽  
Author(s):  
Satoshi Fujii ◽  
Shinichi Shikata ◽  
Long Wei ◽  
Shoichiro Tanigawa
Keyword(s):  
Positron Beam ◽  
Slow Positron

scholarly journals Study of Microvoids in High-Rate a-Si:H Using Positron Annihilation

1997 ◽  
Vol 467 ◽  
Author(s):  
X. Zou ◽  
D. P. Webb ◽  
S. H. Lin ◽  
Y. W. Lam ◽  
Y. C. Chan ◽  
...  
Keyword(s):  
Thin Films ◽  
Positron Annihilation ◽  
Surface Region ◽  
Positron Beam ◽  
High Rate ◽  
Doppler Broadening ◽  
Slow Positron ◽  
Depth Profiles ◽  
Vacancy Type Defect ◽  
Low Rate

ABSTRACTIn this paper, we have carried out the positron annihilation measurement on high-rate and low-rate a-Si:H thin films deposited by PECVD. By means of the slow positron beam Doppler-broadening technique, the depth profiles of microvoids in a-Si:H have been determined. We have also studied the vacancy-type defect in the surface region in high-rate grown a-Si:H, making comparison between high-rate and low-rate a-Si:H. By plotting S and W parameters in the (S, W) plane, we have shown that the vacancies in all of the high-rate and low-rate deposited intrinsic samples, and in differently doped low-rate samples are of the same nature.

Characterization of polymer films using a slow positron beam

2003 ◽  
Vol 7 (1) ◽  
pp. 37-41 ◽  
Author(s):  
Chunqing He ◽  
Takenori Suzuki ◽  
Eisaku Hamada ◽  
Hitoshi Kobayashi ◽  
Kenjiro Kondo ◽  
...  
Keyword(s):  
Polymer Films ◽  
Positron Beam ◽  
Slow Positron
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