Analysis and modelling of lateral heterostructure field-effect bipolar transistors

2011 ◽  
Vol 12 (11) ◽  
pp. 1794-1799 ◽  
Author(s):  
Zi-En Ooi ◽  
Samarendra P. Singh ◽  
Serene L.G. Ng ◽  
Gregory K.L. Goh ◽  
Ananth Dodabalapur
Keyword(s):  
Field Effect ◽  
Bipolar Transistors ◽  
Lateral Heterostructure

Electrical characteristics of lateral heterostructure organic field-effect bipolar transistors

2009 ◽  
Vol 94 (1) ◽  
pp. 013308 ◽  
Author(s):  
Samarendra P. Singh ◽  
Prashant Sonar ◽  
Alan Sellinger ◽  
Ananth Dodabalapur
Keyword(s):  
Field Effect ◽  
Bipolar Transistors ◽  
Electrical Characteristics ◽  
Lateral Heterostructure

Electrical characteristics of zinc oxide-organic semiconductor lateral heterostructure based hybrid field-effect bipolar transistors

2011 ◽  
Vol 98 (7) ◽  
pp. 073302 ◽  
Author(s):  
Samarendra P. Singh ◽  
Zi-En Ooi ◽  
Serene Ng Lay Geok ◽  
Gregory K. L. Goh ◽  
Ananth Dodabalapur
Keyword(s):  
Zinc Oxide ◽  
Organic Semiconductor ◽  
Field Effect ◽  
Bipolar Transistors ◽  
Electrical Characteristics ◽  
Lateral Heterostructure

Monolayer-Trilayer Lateral Heterostructure Based Antimonene Field Effect Transistor: Better Contact and High On/Off Ratios

2018 ◽  
Vol 12 (5) ◽  
pp. 1800038 ◽  
Author(s):  
Jianyong Chen ◽  
Zhixiong Yang ◽  
Wenzhe Zhou ◽  
Hui Zou ◽  
Mingjun Li ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor ◽  
Lateral Heterostructure

scholarly journals Graded-Gap TechnologyFormattingof High-Speed GaAs – TransistorStructuresastheBasisforModern of Large Integrated Circuits

2015 ◽  
Vol 16 (1) ◽  
pp. 221-229
Author(s):  
S.P. Novosyadlyy ◽  
A.M. Bosats'kyy
Keyword(s):  
Integrated Circuits ◽  
Field Effect ◽  
High Speed ◽  
Field Effect Transistors ◽  
Effective Rate ◽  
Bipolar Transistors ◽  
Hot Electron ◽  
Silicon Devices ◽  
Heterostructure Field Effect Transistors ◽  
Gap Technology

Reducing the size of silicon devices is accompanied by an increase in the effective rate of electrons,  decrease transit time and the transition to a ballistic work.Power consumption is reduced too. Formation of large integrated circuits structures onSi-homotransition reduces their frequency range and performance.Nowadaysproposed several new types of devices and technologies forming of large integrated circuits structures that based on high speeds and mobility of electrons in GaAs, and  small size structures.These include, for example, the heterostructure field-effect transistors on a segmented doping, bipolar transistors with wide-emitter, transistor with soulful base, vertical ballistic transistors, devices with flat-doped barriers and hot electron transistors as element base of modern high-speed large integrated circuits.In this article we consider graded-gap technology formatting as bipolar and field-effect transistors, which are the basis of modern high-speedof large integrated circuits structures.

scholarly journals Computer-aided design software for multi-stage amplifiers with bipolar transistors and field effect

2019 ◽  
Vol 1418 ◽  
pp. 012001 ◽  
Author(s):  
L Ramírez-Carvajal ◽  
G Sierra-Peñaranda ◽  
K Puerto-López ◽  
D Guevara-Ibarra
Keyword(s):  
Computer Aided Design ◽  
Field Effect ◽  
Bipolar Transistors ◽  
Multi Stage ◽  
Computer Aided ◽  
Design Software ◽  
Aided Design

Microstructural Characterization of SiGe Heterolayers

1991 ◽  
Vol 239 ◽  
Author(s):  
N. David Theodore ◽  
Peter Fejes ◽  
Mamoru Tomozane ◽  
Ming Liaw
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Infrared Detectors ◽  
Field Effect ◽  
Strain Energy ◽  
Field Effect Transistors ◽  
Microstructural Characterization ◽  
Bipolar Transistors ◽  
Misfit Dislocations ◽  
Extended Defects

ABSTRACTSiGe is of interest for use in heterojunction-bipolar transistors, infrared detectors and field-effect transistors. In this study, graded SiGe heterolayers grown on Si, and heterolayers grown on SIMOX by CVD, were characterized using TEM. The graded-heterolayers consisted of ten layers of Si1-xGex on substrate silicon. Misfit dislocations were present at interfaces in the bottom 4–5 layers of the heterostructure. This conforms with predictions from qualitative strain-energy considerations. The greatest density of misfit dislocations was present at the Si1-xGex interface between the bottom two layers of the heterostructure. Dislocations were observed to extend out of the interface and up into the heterolayer structure. The defects were found to interact with interfaces in the structure and finally cease extending upwards towards the surface of the wafer. In addition to graded heterolayers, SiGe heterolayers grown on SIMOX were also investigated. The structures consisted of epi-silicon grown on a Si/Si1-xGex superlattice which was in turn grown on a Si/SiO2 (SIMOX) structure. The behavior of defects in the layers was of interest. TEM characterization showed a large density of extended-defects present in the layers. Dislocations were observed to originate at the SIMOX oxide/Si interface, propagate up through the SiGe superlattice and into the epi-Si layer. Some dislocations were found to interact with the SiGe superlattice and cease propagating up towards the top of the wafer. SiGe superlattices with a higher concentration of Ge are more effective in reducing defect propagation towards the surface of the wafer.

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