Electrical characteristics of zinc oxide-organic semiconductor lateral heterostructure based hybrid field-effect bipolar transistors

2011 ◽  
Vol 98 (7) ◽  
pp. 073302 ◽  
Author(s):  
Samarendra P. Singh ◽  
Zi-En Ooi ◽  
Serene Ng Lay Geok ◽  
Gregory K. L. Goh ◽  
Ananth Dodabalapur
Keyword(s):  
Zinc Oxide ◽  
Organic Semiconductor ◽  
Field Effect ◽  
Bipolar Transistors ◽  
Electrical Characteristics ◽  
Lateral Heterostructure

Electrical characteristics of lateral heterostructure organic field-effect bipolar transistors

2009 ◽  
Vol 94 (1) ◽  
pp. 013308 ◽  
Author(s):  
Samarendra P. Singh ◽  
Prashant Sonar ◽  
Alan Sellinger ◽  
Ananth Dodabalapur
Keyword(s):  
Field Effect ◽  
Bipolar Transistors ◽  
Electrical Characteristics ◽  
Lateral Heterostructure

AN ORGANIC FIELD EFFECT TRANSISTORS-BASED SENSING PLATFORM FOR ENVIRONMENTAL/SECURITY APPLICATIONS

2011 ◽  
Vol 10 (04n05) ◽  
pp. 891-898 ◽  
Author(s):  
RAVISHANKAR S. DUDHE ◽  
HARSHIL N. RAVAL ◽  
ANIL KUMAR ◽  
V. RAMGOPAL RAO
Keyword(s):  
Radiation Dose ◽  
Ionizing Radiation ◽  
Organic Semiconductor ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Semiconductor Layer ◽  
Electrical Characteristics ◽  
Organic Field Effect Transistors ◽  
Γ Radiation ◽  
Semiconducting Material

Organic semiconducting material based sensors have been used for various environmental applications. Organic field effect transistors (OFETs) also find their applications in explosive vapor detection and total ionizing radiation dose determination. OFETs using poly 3-hexylthiophene (P3HT), a p-type organic semiconductor material and CuII tetraphenylporphyrin ( CuTPP ) composite as their active material were investigated as sensors for detection of various nitro-based explosive vapors with greater than parts per billion sensitivity range. Significant changes, suitable for sensor response, were observed in ON current (Ion) and transconductance (gm) extracted from electrical characteristics of the OFET after exposure to vapors of various explosive compounds. However, a similar device response was not observed to strong oxidizing agents such as benzoquinone (BQ) and benzophenone (BP). Also, the use of organic semiconducting material sensors for determining total ionizing radiation dose was studied, wherein the conductivity of the material was measured as a function of total ionizing radiation dose. An organic semiconducting material resistor was exposed to γ-radiation and it was observed that the change in resistance was proportional to the ionizing radiation dose. Changes in various parameters extracted from electrical characteristics of the OFET after γ-radiation exposure resulted in an improved sensitivity. To protect the organic semiconductor layer from the degradation in the ambient the sensors were passivated with a thin layer of silicon nitride.

Analysis and modelling of lateral heterostructure field-effect bipolar transistors

2011 ◽  
Vol 12 (11) ◽  
pp. 1794-1799 ◽  
Author(s):  
Zi-En Ooi ◽  
Samarendra P. Singh ◽  
Serene L.G. Ng ◽  
Gregory K.L. Goh ◽  
Ananth Dodabalapur
Keyword(s):  
Field Effect ◽  
Bipolar Transistors ◽  
Lateral Heterostructure

scholarly journals Mercury-Mediated Organic Semiconductor Surface Doping Monitored by Electrolyte-Gated Field-Effect Transistors

2017 ◽  
Vol 27 (46) ◽  
pp. 1703899 ◽  
Author(s):  
Qiaoming Zhang ◽  
Francesca Leonardi ◽  
Stefano Casalini ◽  
Marta Mas-Torrent
Keyword(s):  
Organic Semiconductor ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Semiconductor Surface ◽  
Surface Doping

scholarly journals Hysteresis Behavior of the Donor–Acceptor-Type Ambipolar Semiconductor for Non-Volatile Memory Applications

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 301
Author(s):  
Young Jin Choi ◽  
Jihyun Kim ◽  
Min Je Kim ◽  
Hwa Sook Ryu ◽  
Han Young Woo ◽  
...  
Keyword(s):  
Organic Semiconductor ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Memory Device ◽  
Non Volatile Memory ◽  
Device Applications ◽  
Donor Acceptor ◽  
Effect Transistor ◽  
Volatile Memory ◽  
Memory Applications

Donor–acceptor-type organic semiconductor molecules are of great interest for potential organic field-effect transistor applications with ambipolar characteristics and non-volatile memory applications. Here, we synthesized an organic semiconductor, PDPPT-TT, and directly utilized it in both field-effect transistor and non-volatile memory applications. As-synthesized PDPPT-TT was simply spin-coated on a substrate for the device fabrications. The PDPPT-TT based field-effect transistor showed ambipolar electrical transfer characteristics. Furthermore, a gold nanoparticle-embedded dielectric layer was used as a charge trapping layer for the non-volatile memory device applications. The non-volatile memory device showed clear memory window formation as applied gate voltage increases, and electrical stability was evaluated by performing retention and cycling tests. In summary, we demonstrate that a donor–acceptor-type organic semiconductor molecule shows great potential for ambipolar field-effect transistors and non-volatile memory device applications as an important class of materials.

Effect of Surrounded-Channel Structure on Electrical Characteristics of $c$ -Axis Aligned Crystalline In–Ga–Zn–O Field-Effect Transistor

2015 ◽  
Vol 36 (4) ◽  
pp. 309-311 ◽  
Author(s):  
Yoshiyuki Kobayashi ◽  
Daisuke Matsubayashi ◽  
Suguru Hondo ◽  
Tsutomu Yamamoto ◽  
Yutaka Okazaki ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Channel Structure ◽  
Electrical Characteristics ◽  
Effect Transistor
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