Thin-film field-effect transistors: The effects of traps on the bias and temperature dependence of field-effect mobility, including the Meyer–Neldel rule

2006 ◽  
Vol 7 (6) ◽  
pp. 592-599 ◽  
Author(s):  
P. Stallinga ◽  
H.L. Gomes
Keyword(s):  
Thin Film ◽  
Temperature Dependence ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Field Effect Mobility

New Copolymers Based on Acenaphto[1,2-b]thieno[3,4-e]Pyrazine for Transistor and Solar Cell Applications

2009 ◽  
Vol 1197 ◽  
Author(s):  
Pierre-Luc T. Boudreault ◽  
Nobuyuki Miyaki ◽  
Rajib Mondal ◽  
Ming Lee Tang ◽  
Zhenan Bao ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Thermal Treatment ◽  
Power Conversion Efficiency ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Power Conversion ◽  
Photovoltaic Cells ◽  
Field Effect Mobility ◽  
Donor Acceptor

AbstractWe will show the synthesis of new donor-acceptor copolymers based on 2,7-carbazole or 2,7-dibenzosilole and acenaphtho[1,2-b]thieno[3,4-e]pyrazine. After the synthesis of these new copolymers, we have characterized the materials by UV-vis, DSC, and XRD to determine the degree of organization. Afterward, we have fabricated and investigated field-effect transistors and photovoltaic cells from these polymers. The optimization of the thin film by thermal treatment have led to a field-effect mobility of 0.04 cm2/(V.s) and power conversion efficiency of 0.44%.

Temperature Dependence of Field-Effect Mobility in Organic Thin-Film Transistors: Similarity to Inorganic Transistors

2016 ◽  
Vol 16 (4) ◽  
pp. 3219-3222 ◽  
Author(s):  
Jun Okada ◽  
Takashi Nagase ◽  
Takashi Kobayashi ◽  
Hiroyoshi Naito
Keyword(s):  
Thin Film ◽  
Temperature Dependence ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Carrier Transport ◽  
Organic Thin Film Transistors ◽  
Localized States ◽  
Organic Thin Film ◽  
Field Effect Mobility ◽  
Oxide Semiconductors

Carrier transport in solution-processed organic thin-film transistors (OTFTs) based on dioctylben-zothienobenzothiophene (C8-BTBT) has been investigated in a wide temperature range from 296 to 10 K. The field-effect mobility shows thermally activated behavior whose activation energy becomes smaller with decreasing temperature. The temperature dependence of field-effect mobility found in C8-BTBT is similar to that of others materials: organic semiconducting polymers, amorphous oxide semiconductors and hydrogenated amorphous silicon. These results indicate that hopping transport between isoenergetic localized states becomes dominated in a low temperature regime in these materials.

Temperature and Frequency Dependent Characteristics of Amorphous Silicon thin film Transistors

1995 ◽  
Vol 377 ◽  
Author(s):  
H. C. Slade ◽  
M. S. Shur ◽  
M. Hack
Keyword(s):  
Thin Film ◽  
Temperature Dependence ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Experimental Studies ◽  
Localized States ◽  
Field Effect Mobility ◽  
Silicon Thin Film ◽  
Capacitance Voltage

ABSTRACTOn the basis of our experimental studies of the temperature dependence of amorphous silicon thin film transistor current-voltage and capacitance-voltage characteristics, we have developed an analytical device model suitable for implementation in circuit simulators. This model describes the above-threshold (on) current and the subthreshold (off) current [1]. In addition, the model is able to incorporate changes in the distribution of localized states which arise from thermal and/or bias stress. In this paper, we identify the temperature-dependent parameters, which describe the temperature dependence of both the on and off currents, and we model the leakage current at large negative gate biases. The modeling results are in good agreement with our experimental data. We also discuss capacitance-voltage characteristics of amorphous silicon thin film transistors for varying gate lengths, temperatures, and frequencies. The measured capacitance-voltage characteristics show strong frequency dispersion, which is related to the trap-limited transport of carriers in the channel. The characteristic time constant, which determines when the channel capacitance becomes dependent on frequency, is on the order of the transit time calculated with the field-effect mobility and the electric field. The field-effect mobility takes into account carrier trapping by the localized states and is a function of gate voltage and temperature.

Nanostructure Dependence of Field-Effect Mobility in Regioregular Poly(3-hexylthiophene) Thin Film Field Effect Transistors

2006 ◽  
Vol 128 (11) ◽  
pp. 3480-3481 ◽  
Author(s):  
Rui Zhang ◽  
Bo Li ◽  
Mihaela C. Iovu ◽  
Malika Jeffries-EL ◽  
Geneviève Sauvé ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Field Effect Mobility ◽  
Regioregular Poly

scholarly journals Influence of Active Channel Layer Thickness on SnO2 Thin-Film Transistor Performance

Electronics ◽  
2021 ◽  
Vol 10 (2) ◽  
pp. 200
Author(s):  
Do Won Kim ◽  
Hyeon Joong Kim ◽  
Changmin Lee ◽  
Kyoungdu Kim ◽  
Jin-Hyuk Bae ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Thin Film Transistor ◽  
Sol Gel ◽  
Precursor Concentration ◽  
Sno2 Thin Film ◽  
Field Effect Mobility ◽  
Si Substrates ◽  
Channel Layer ◽  
Active Channel

Sol-gel processed SnO2 thin-film transistors (TFTs) were fabricated on SiO2/p+ Si substrates. The SnO2 active channel layer was deposited by the sol-gel spin coating method. Precursor concentration influenced the film thickness and surface roughness. As the concentration of the precursor was increased, the deposited films were thicker and smoother. The device performance was influenced by the thickness and roughness of the SnO2 active channel layer. Decreased precursor concentration resulted in a fabricated device with lower field-effect mobility, larger subthreshold swing (SS), and increased threshold voltage (Vth), originating from the lower free carrier concentration and increase in trap sites. The fabricated SnO2 TFTs, with an optimized 0.030 M precursor, had a field-effect mobility of 9.38 cm2/Vs, an SS of 1.99, an Ion/Ioff value of ~4.0 × 107, and showed enhancement mode operation and positive Vth, equal to 9.83 V.

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