Modeling of the temperature dependence of the field-effect mobility in thin film devices of conjugated oligomers

1999 ◽  
Vol 74 (2) ◽  
pp. 260-262 ◽  
Author(s):  
J. H. Schön ◽  
B. Batlogg
Keyword(s):  
Thin Film ◽  
Temperature Dependence ◽  
Field Effect ◽  
Conjugated Oligomers ◽  
Field Effect Mobility ◽  
Thin Film Devices

Temperature Dependence of Field-Effect Mobility in Organic Thin-Film Transistors: Similarity to Inorganic Transistors

2016 ◽  
Vol 16 (4) ◽  
pp. 3219-3222 ◽  
Author(s):  
Jun Okada ◽  
Takashi Nagase ◽  
Takashi Kobayashi ◽  
Hiroyoshi Naito
Keyword(s):  
Thin Film ◽  
Temperature Dependence ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Carrier Transport ◽  
Organic Thin Film Transistors ◽  
Localized States ◽  
Organic Thin Film ◽  
Field Effect Mobility ◽  
Oxide Semiconductors

Carrier transport in solution-processed organic thin-film transistors (OTFTs) based on dioctylben-zothienobenzothiophene (C8-BTBT) has been investigated in a wide temperature range from 296 to 10 K. The field-effect mobility shows thermally activated behavior whose activation energy becomes smaller with decreasing temperature. The temperature dependence of field-effect mobility found in C8-BTBT is similar to that of others materials: organic semiconducting polymers, amorphous oxide semiconductors and hydrogenated amorphous silicon. These results indicate that hopping transport between isoenergetic localized states becomes dominated in a low temperature regime in these materials.

Temperature and Frequency Dependent Characteristics of Amorphous Silicon thin film Transistors

1995 ◽  
Vol 377 ◽  
Author(s):  
H. C. Slade ◽  
M. S. Shur ◽  
M. Hack
Keyword(s):  
Thin Film ◽  
Temperature Dependence ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Experimental Studies ◽  
Localized States ◽  
Field Effect Mobility ◽  
Silicon Thin Film ◽  
Capacitance Voltage

ABSTRACTOn the basis of our experimental studies of the temperature dependence of amorphous silicon thin film transistor current-voltage and capacitance-voltage characteristics, we have developed an analytical device model suitable for implementation in circuit simulators. This model describes the above-threshold (on) current and the subthreshold (off) current [1]. In addition, the model is able to incorporate changes in the distribution of localized states which arise from thermal and/or bias stress. In this paper, we identify the temperature-dependent parameters, which describe the temperature dependence of both the on and off currents, and we model the leakage current at large negative gate biases. The modeling results are in good agreement with our experimental data. We also discuss capacitance-voltage characteristics of amorphous silicon thin film transistors for varying gate lengths, temperatures, and frequencies. The measured capacitance-voltage characteristics show strong frequency dispersion, which is related to the trap-limited transport of carriers in the channel. The characteristic time constant, which determines when the channel capacitance becomes dependent on frequency, is on the order of the transit time calculated with the field-effect mobility and the electric field. The field-effect mobility takes into account carrier trapping by the localized states and is a function of gate voltage and temperature.

scholarly journals Influence of Active Channel Layer Thickness on SnO2 Thin-Film Transistor Performance

Electronics ◽  
2021 ◽  
Vol 10 (2) ◽  
pp. 200
Author(s):  
Do Won Kim ◽  
Hyeon Joong Kim ◽  
Changmin Lee ◽  
Kyoungdu Kim ◽  
Jin-Hyuk Bae ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Thin Film Transistor ◽  
Sol Gel ◽  
Precursor Concentration ◽  
Sno2 Thin Film ◽  
Field Effect Mobility ◽  
Si Substrates ◽  
Channel Layer ◽  
Active Channel

Sol-gel processed SnO2 thin-film transistors (TFTs) were fabricated on SiO2/p+ Si substrates. The SnO2 active channel layer was deposited by the sol-gel spin coating method. Precursor concentration influenced the film thickness and surface roughness. As the concentration of the precursor was increased, the deposited films were thicker and smoother. The device performance was influenced by the thickness and roughness of the SnO2 active channel layer. Decreased precursor concentration resulted in a fabricated device with lower field-effect mobility, larger subthreshold swing (SS), and increased threshold voltage (Vth), originating from the lower free carrier concentration and increase in trap sites. The fabricated SnO2 TFTs, with an optimized 0.030 M precursor, had a field-effect mobility of 9.38 cm2/Vs, an SS of 1.99, an Ion/Ioff value of ~4.0 × 107, and showed enhancement mode operation and positive Vth, equal to 9.83 V.

The importance of spinning speed in fabrication of spin-coated organic thin film transistors: Film morphology and field effect mobility

2014 ◽  
Vol 104 (23) ◽  
pp. 233306 ◽  
Author(s):  
Kenji Kotsuki ◽  
Hiroshige Tanaka ◽  
Seiji Obata ◽  
Sven Stauss ◽  
Kazuo Terashima ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Organic Thin Film Transistors ◽  
Film Morphology ◽  
Organic Thin Film ◽  
Field Effect Mobility ◽  
Spinning Speed

Remarkable Increase in Field Effect Mobility of Amorphous IZTO Thin-Film Transistors With Purified ZrOxGate Insulator

2018 ◽  
Vol 39 (3) ◽  
pp. 371-374 ◽  
Author(s):  
Ravindra Naik Bukke ◽  
Christophe Avis ◽  
Mude Narendra Naik ◽  
Jin Jang
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Field Effect Mobility ◽  
Remarkable Increase

Hydrogenation Effect of Amorphous Silicon Thin Film Transistors by Atmospheric Pressure CVD

1993 ◽  
Vol 297 ◽  
Author(s):  
Byung Chul Ahn ◽  
Jeong Hyun Kim ◽  
Dong Gil Kim ◽  
Byeong Yeon Moon ◽  
Kwang Nam Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Atmospheric Pressure ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Low Cost ◽  
Thin Film Transistor ◽  
Field Effect Mobility ◽  
Silicon Thin Film ◽  
Hydrogenation Effect

The hydrogenation effect was studied in the fabrication of amorphous silicon thin film transistor using APCVD technique. The inverse staggered type a-Si TFTs were fabricated with the deposited a-Si and SiO2 films by the atmospheric pressure (AP) CVD. The field effect mobility of the fabricated a-Si TFT is 0.79 cm2/Vs and threshold voltage is 5.4V after post hydrogenation. These results can be applied to make low cost a-Si TFT array using an in-line APCVD system.

scholarly journals Improving the electrical performance of solution processed oligothiophene thin-film transistors via structural similarity blending

2017 ◽  
Vol 5 (21) ◽  
pp. 5048-5054 ◽  
Author(s):  
Tim Leydecker ◽  
Laura Favaretto ◽  
Duc Trong Duong ◽  
Gabriella Zappalà ◽  
Karl Börjesson ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Structural Similarity ◽  
Single Component ◽  
Electrical Performance ◽  
Field Effect Mobility ◽  
Solution Processed

Here we show that the blending of structurally similar oligothiophene molecules is an effective approach to improve the field-effect mobility and Ion/Ioff as compared to single component based transistors.

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