Numerical simulation of blue InGaN light-emitting diodes with polarization-matched AlGaInN electron-blocking layer and barrier layer

2009 ◽  
Vol 282 (21) ◽  
pp. 4252-4255 ◽  
Author(s):  
Yen-Kuang Kuo ◽  
Miao-Chan Tsai ◽  
Sheng-Horng Yen
Keyword(s):  
Numerical Simulation ◽  
Barrier Layer ◽  
Light Emitting Diodes ◽  
Blocking Layer ◽  
Electron Blocking Layer ◽  
Light Emitting

Inserting a AlN Electron Blocking Layer for InGaN/GaN Blue Light-Emitting Diodes

2020 ◽  
Vol 1014 ◽  
pp. 126-130
Author(s):  
Wan Sheng Zuo ◽  
Yin Xi Niu ◽  
Liu Yang ◽  
Xiu Zhen Chi ◽  
Jin Jin Liu ◽  
...  
Keyword(s):  
Blue Light ◽  
Barrier Layer ◽  
Light Emitting Diodes ◽  
Electrostatic Discharge ◽  
Blocking Layer ◽  
Optical Performance ◽  
Spreading Effect ◽  
Electron Blocking Layer ◽  
Light Emitting ◽  
Wide Range

In this study, the advantages of the AlN electron blocking layer (EBL) for InGaN/GaN blue light-emitting diodes (LEDs) were investigated. The LEDs with the AlN EBL exhibited better optical performance over a wide range of carrier concentration due to the suppression of electron overflow. Furthermore, the AlN EBL with a thicker last barrier layer was investigated. The thicker last barrier layer was used to enhance Electrostatic Discharge (ESD) characteristic by the better current spreading effect.

Slightly-Doped Step-Like Electron-Blocking Layer in InGaN Light-Emitting Diodes

2012 ◽  
Vol 24 (17) ◽  
pp. 1506-1508 ◽  
Author(s):  
Yen-Kuang Kuo ◽  
Tsun-Hsin Wang ◽  
Jih-Yuan Chang ◽  
Jen-De Chen
Keyword(s):  
Light Emitting Diodes ◽  
Blocking Layer ◽  
Electron Blocking Layer ◽  
Light Emitting
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