Effect of p-AlxGa1−xN electron blocking layer on optical and electrical properties in GaN-based light emitting diodes

2012 ◽  
Vol 30 (6) ◽  
pp. 061204 ◽  
Author(s):  
Ki-Hyun Kim ◽  
Sang-Won Lee ◽  
Sung-Nam Lee ◽  
Jihoon Kim
Keyword(s):  
Electrical Properties ◽  
Light Emitting Diodes ◽  
Blocking Layer ◽  
Optical And Electrical Properties ◽  
Electron Blocking Layer ◽  
Light Emitting

Influence of the Electron Blocking Layer on the Performance of Multilayer White Organic Light-Emitting Diodes

2012 ◽  
Vol 1402 ◽  
Author(s):  
Caroline Weichsel ◽  
Sebastian Reineke ◽  
Björn Lüssem ◽  
Karl Leo
Keyword(s):  
Electrical Properties ◽  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Carrier Transport ◽  
Light Emitting Diodes ◽  
Organic Light Emitting Diodes ◽  
Blocking Layer ◽  
Electron Blocking Layer ◽  
Light Emitting ◽  
Organic Light

ABSTRACTThe effect of the electron blocking layer on the performance of white organic light-emitting diodes is studied. A variation of the material influences not only the carrier transport, but also the light distribution from the different emitters. Highest external quantum efficiency is reached for the material with the worst electrical properties, while highest luminous efficacy is obtained for the material with the best transport characteristics.

Slightly-Doped Step-Like Electron-Blocking Layer in InGaN Light-Emitting Diodes

2012 ◽  
Vol 24 (17) ◽  
pp. 1506-1508 ◽  
Author(s):  
Yen-Kuang Kuo ◽  
Tsun-Hsin Wang ◽  
Jih-Yuan Chang ◽  
Jen-De Chen
Keyword(s):  
Light Emitting Diodes ◽  
Blocking Layer ◽  
Electron Blocking Layer ◽  
Light Emitting
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