Effect of Interface State Density of the AlGaN Electron Blocking Layer/GaN Barrier Layer in InGaN Blue Light-Emitting Diodes

2020 ◽  
Vol 76 (6) ◽  
pp. 522-526
Author(s):  
Kyu-Sang Kim ◽  
Jong-In Shim
Keyword(s):  
Blue Light ◽  
Barrier Layer ◽  
Light Emitting Diodes ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Blocking Layer ◽  
Electron Blocking Layer ◽  
Light Emitting

Inserting a AlN Electron Blocking Layer for InGaN/GaN Blue Light-Emitting Diodes

2020 ◽  
Vol 1014 ◽  
pp. 126-130
Author(s):  
Wan Sheng Zuo ◽  
Yin Xi Niu ◽  
Liu Yang ◽  
Xiu Zhen Chi ◽  
Jin Jin Liu ◽  
...  
Keyword(s):  
Blue Light ◽  
Barrier Layer ◽  
Light Emitting Diodes ◽  
Electrostatic Discharge ◽  
Blocking Layer ◽  
Optical Performance ◽  
Spreading Effect ◽  
Electron Blocking Layer ◽  
Light Emitting ◽  
Wide Range

In this study, the advantages of the AlN electron blocking layer (EBL) for InGaN/GaN blue light-emitting diodes (LEDs) were investigated. The LEDs with the AlN EBL exhibited better optical performance over a wide range of carrier concentration due to the suppression of electron overflow. Furthermore, the AlN EBL with a thicker last barrier layer was investigated. The thicker last barrier layer was used to enhance Electrostatic Discharge (ESD) characteristic by the better current spreading effect.

Performance improvement of blue light-emitting diodes with an AlInN/GaN superlattice electron-blocking layer

2013 ◽  
Vol 22 (5) ◽  
pp. 058503 ◽  
Author(s):  
Fang Zhao ◽  
Guang-Rui Yao ◽  
Jing-Jing Song ◽  
Bin-Bin Ding ◽  
Jian-Yong Xiong ◽  
...  
Keyword(s):  
Performance Improvement ◽  
Blue Light ◽  
Light Emitting Diodes ◽  
Blocking Layer ◽  
Electron Blocking Layer ◽  
Light Emitting
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