scholarly journals Improving AlN Crystal Quality and Strain Management on Nanopatterned Sapphire Substrates by High‐Temperature Annealing for UVC Light‐Emitting Diodes

2020 ◽  
Vol 217 (7) ◽  
pp. 1900796 ◽  
Author(s):  
Sylvia Hagedorn ◽  
Sebastian Walde ◽  
Norman Susilo ◽  
Carsten Netzel ◽  
Nadine Tillner ◽  
...  
Keyword(s):  
High Temperature ◽  
Light Emitting Diodes ◽  
Crystal Quality ◽  
High Temperature Annealing ◽  
Light Emitting ◽  
Sapphire Substrates

Effects of Neutron Irradiation and Post-Irradiation Annealing on the Radiant Output Power of Infrared Light Emitting Diodes

1990 ◽  
Vol 184 ◽  
Author(s):  
H. S. Hajghassem ◽  
W. D. Brown ◽  
J. R. Yeargan ◽  
J. G. Williams
Keyword(s):  
High Temperature ◽  
Output Power ◽  
Light Emitting Diodes ◽  
Neutron Fluence ◽  
Light Output ◽  
Infrared Light ◽  
High Temperature Annealing ◽  
Light Emitting ◽  
Current Voltage ◽  
Operating Current

ABSTRACTThis paper presents results of a study of the degradation of commercially available GaAs and AlGaAs light emitting diodes subjected to neutron bombardment at a TRIGA reactor. Devices were characterized using current-voltage and light output measurements prior to and following a sequence of neutron irradiations and after high temperature annealing. A model is derived which can be used to determine the lifetime damage constant product, τoK, if the light output measurements as a function of IMeV equivalent neutron fluence are made at a fixed operating current. For current levels smaller than approximately 1 ma, τoK and operating current is logarithmic with τoK decreasing as current increases. Annealing at temperature up to 275°C recovers some of the neutroninduced damage but does not affect the validity of the model.

scholarly journals In(Ga)N Nanostructures and Devices Grown by Molecular Beam Epitaxy and Metal-Assisted Photochemical Etching

Nanomaterials ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 126
Author(s):  
Abdul Kareem K. Soopy ◽  
Zhaonan Li ◽  
Tianyi Tang ◽  
Jiaqian Sun ◽  
Bo Xu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Gas Sensors ◽  
Molecular Beam ◽  
Light Emitting Diodes ◽  
Crystal Quality ◽  
Porous Structures ◽  
Light Emitting ◽  
Photochemical Etching ◽  
Recent Advances ◽  
Low Dimensional

This review summarizes the recent research on nitride nanostructures and their applications. We cover recent advances in the synthesis and growth of porous structures and low-dimensional nitride nanostructures via metal-assisted photochemical etching and molecular beam epitaxy. The growth of nitride materials on various substrates, which improves their crystal quality, doping efficiency, and flexibility of tuning performance, is discussed in detail. Furthermore, the recent development of In(Ga)N nanostructure applications (light-emitting diodes, lasers, and gas sensors) is presented. Finally, the challenges and directions in this field are addressed.

scholarly journals Suppressing the Initial Growth of Sidewall GaN by Modifying Micron-Sized Patterned Sapphire Substrate with H3PO4-Based Etchant

Micromachines ◽  
2018 ◽  
Vol 9 (12) ◽  
pp. 622 ◽  
Author(s):  
Wen-Yang Hsu ◽  
Yuan-Chi Lian ◽  
Pei-Yu Wu ◽  
Wei-Min Yong ◽  
Jinn-Kong Sheu ◽  
...  
Keyword(s):  
Sapphire Substrate ◽  
Light Emitting Diodes ◽  
Ex Situ ◽  
Initial Growth ◽  
Patterned Sapphire Substrate ◽  
Light Emitting ◽  
Sapphire Substrates ◽  
Patterned Sapphire Substrates

Micron-sized patterned sapphire substrates (PSS) are used to improve the performance of GaN-based light-emitting diodes (LEDs). However, the growth of GaN is initiated not only from the bottom c-plane but also from the sidewall of the micron-sized patterns. Therefore, the coalescence of these GaN crystals creates irregular voids. In this study, two kinds of nucleation layers (NL)—ex-situ AlN NL and in-situ GaN NL—were used, and the growth of sidewall GaN was successfully suppressed in both systems by modifying the micron-sized PSS surface.

Improved crystal quality and performance of GaN-based light-emitting diodes by decreasing the slanted angle of patterned sapphire

2010 ◽  
Vol 96 (5) ◽  
pp. 051109 ◽  
Author(s):  
Ji-Hao Cheng ◽  
YewChung Sermon Wu ◽  
Wei-Chih Liao ◽  
Bo-Wen Lin
Keyword(s):  
Light Emitting Diodes ◽  
Crystal Quality ◽  
Light Emitting ◽  
And Performance

scholarly journals Polarization of light emission by 460nm GaInN∕GaN light-emitting diodes grown on (0001) oriented sapphire substrates

2007 ◽  
Vol 91 (5) ◽  
pp. 051117 ◽  
Author(s):  
Martin F. Schubert ◽  
Sameer Chhajed ◽  
Jong Kyu Kim ◽  
E. Fred Schubert ◽  
Jaehee Cho
Keyword(s):  
Light Emitting Diodes ◽  
Light Emission ◽  
Light Emitting ◽  
Sapphire Substrates ◽  
Polarization Of Light

scholarly journals Enhanced light extraction of nonpolar a-plane (11-20) GaN light emitting diodes on sapphire substrates by photo-enhanced chemical wet etching

2010 ◽  
Vol 18 (9) ◽  
pp. 9728 ◽  
Author(s):  
Younghun Jung ◽  
Jihyun Kim ◽  
Soohwan Jang ◽  
Kwang Hyeon Baik ◽  
Yong Gon Seo ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Wet Etching ◽  
Light Extraction ◽  
Light Emitting ◽  
Sapphire Substrates

A study of negative-thermal-quenching (Ba/Ca)AlSi5O2N7:Eu2+ phosphors

2021 ◽  
Author(s):  
Hongping Ma ◽  
Shixu Tao ◽  
Youjie Hua ◽  
Jun Zheng ◽  
Luyi Lou ◽  
...  
Keyword(s):  
High Temperature ◽  
Light Emitting Diodes ◽  
Thermal Quenching ◽  
Luminous Intensity ◽  
Light Emitting ◽  
Temperature Resistance ◽  
High Temperature Resistance ◽  
New Generation

Phosphor is an important part of the new generation of light-emitting diodes (LEDs), which requires high luminous intensity and high-temperature resistance. In this study, a series of excellent (Ba1-x-yCax)AlSi5O2N7:yEu2+ phosphors...

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